Volume 43; Issue 10

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Semiconductors
Volume 43; Issue 10

Semiconductors

Volume 43; Issue 10

1

Penetration (intercalation) of copper atoms under a graphene layer on iridium (111)

E. V. Rut’kov, N. R. Gall

Journal:

Year:

2009

Language:

english

File:

PDF, 135 KB

english, 2009

2

Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure

A. N. Pikhtin, H. H. Hegazy

Journal:

Year:

2009

Language:

english

File:

PDF, 264 KB

english, 2009

3

The short-wavelength edge of intrinsic photoluminescence in diluted GaNxAs1 −xalloys

A. A. Gutkin, P. N. Brunkov, A. Yu. Egorov

Journal:

Year:

2009

Language:

english

File:

PDF, 199 KB

english, 2009

4

The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)

V. N. Brudnyi, A. V. Kosobutsky, N. G. Kolin

Journal:

Year:

2009

Language:

english

File:

PDF, 253 KB

english, 2009

5

Thermoelectric and other phenomena in structures with nonequilibrium charge carriers and nanoparticles

Journal:

Year:

2009

Language:

english

File:

PDF, 214 KB

english, 2009

6

Effect of surface conduction in the semiconductor electrode on the distribution of the gas-discharge current

V. I. Orbukh, N. N. Lebedeva, B. G. Salamov

Journal:

Year:

2009

Language:

english

File:

PDF, 203 KB

english, 2009

7

Effect of deep impurity on electric characteristics of epitaxial GaAs structures

V. M. Kalygina, E. S. Slyun’ko

Journal:

Year:

2009

Language:

english

File:

PDF, 324 KB

english, 2009

8

Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses

G. A. Martsinovsky, G. D. Shandybina, Yu. S. Dement’eva, R. V. Dyukin, S. V. Zabotnov, L. A. Golovan’, P. K. Kashkarov

Journal:

Year:

2009

Language:

english

File:

PDF, 498 KB

english, 2009

9

Plane two-barrier resonance-tunneling structures: Resonance energies and resonance widths of quasi-stationary electron states

N. V. Tkach, Yu. A. Seti

Journal:

Year:

2009

Language:

english

File:

PDF, 430 KB

english, 2009

10

Suppression of electron transitions between split energy levels in three-barrier structures by a varying space-charge field

A. B. Pashkovskii

Journal:

Year:

2009

Language:

english

File:

PDF, 207 KB

english, 2009

11

Effect of irradiation on the properties of nanocrystalline silicon carbide films

A. V. Semenov, A. V. Lopin, V. M. Puzikov, V. N. Boriskin

Journal:

Year:

2009

Language:

english

File:

PDF, 234 KB

english, 2009

12

Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K

A. N. Petrovskaya, V. I. Zubkov

Journal:

Year:

2009

Language:

english

File:

PDF, 212 KB

english, 2009

13

Study of optical characteristics of structures with strongly strained InxGa1 −xAs quantum wells

D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, A. L. Stankevich, V. V. Shamakhov, I. S. Tarasov

Journal:

Year:

2009

Language:

english

File:

PDF, 154 KB

english, 2009

14

Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers

N. A. Bogoslowsky, K. D. Tsendin

Journal:

Year:

2009

Language:

english

File:

PDF, 201 KB

english, 2009

15

Conductivity of layers of a chalcogenide glassy semiconductor Ge2Sb2Te5in high electric fields

É. A. Lebedev, S. A. Kozykhin, N. N. Konstantinova, L. P. Kazakova

Journal:

Year:

2009

Language:

english

File:

PDF, 184 KB

english, 2009

16

The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon

L. V. Belyakov, Yu. S. Vainshtein, D. N. Goryachev, O. M. Sreseli

Journal:

Year:

2009

Language:

english

File:

PDF, 191 KB

english, 2009

17

Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes

A. S. Pavluchenko, I. V. Rozhansky, D. A. Zakheim

Journal:

Year:

2009

Language:

english

File:

PDF, 205 KB

english, 2009

18

Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure

N. S. Grushko, L. N. Vostretsova, A. S. Ambrosevich, A. S. Kagarmanov

Journal:

Year:

2009

Language:

english

File:

PDF, 241 KB

english, 2009

19

Properties of interfaces in GaInP solar cells

A. S. Gudovskikh, N. A. Kalyuzhnyy, V. M. Lantratov, S. A. Mintairov, M. Z. Shvarts, V. M. Andreev

Journal:

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

20

Quenching of lasing in high power semiconductor laser

S. O. Slipchenko, D. A. Vinokurov, A. V. Lyutetskiy, N. A. Pikhtin, A. L. Stankevich, N. V. Fetisova, A. D. Bondarev, I. S. Tarasov

Journal:

Year:

2009

Language:

english

File:

PDF, 181 KB

english, 2009

21

Effect of silicon-surface orientation in the bulk model of thermal oxidation

O. V. Aleksandrov, A. I. Dusj

Journal:

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

22

Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors

N. K. Zelenina, V. P. Karpenko, O. A. Matveev, V. E. Sedov, A. I. Terentyev, A. A. Tomasov

Journal:

Year:

2009

Language:

english

File:

PDF, 222 KB

english, 2009

23

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

24

Features of simultaneous diffusion of boron and gadolinium in silicon from nanoscale hybrid organic-inorganic films

I. V. Smirnova, O. A. Shilova, V. A. Moshnikov, A. E. Gamarts

Journal:

Year:

2009

Language:

english

File:

PDF, 217 KB

english, 2009

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