Volume 44; Issue 8

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Semiconductors
Volume 44; Issue 8

Semiconductors

Volume 44; Issue 8

1

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, I. V. Ivonin

Journal:

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

2

Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko, P. P. Seregin, E. I. Terukov

Journal:

Year:

2010

Language:

english

File:

PDF, 182 KB

english, 2010

3

Interaction of copper impurity with radiation defects in silicon doped with boron

N. A. Yarykin, J. Weber

Journal:

Year:

2010

Language:

english

File:

PDF, 169 KB

english, 2010

4

Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates

N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii

Journal:

Year:

2010

Language:

english

File:

PDF, 313 KB

english, 2010

5

Study of main HgMnZnTe band parameters

S. E. Ostapov, V. M. Frasunyak, V. V. Zhikharevich

Journal:

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

6

Statistical method of deep-level transient spectroscopy in semiconductors

E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, V. G. Zadorozhniy

Journal:

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

7

Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, R. A. Castro

Journal:

Year:

2010

Language:

english

File:

PDF, 205 KB

english, 2010

8

Electron scattering by acceptor centers inp-Ag2Te at low temperatures

F. F. Aliev, M. B. Jafarov, G. Z. Askerova, E. M. Gojaev

Journal:

Year:

2010

Language:

english

File:

PDF, 211 KB

english, 2010

9

Optical properties of thin GaSe/n-Si(111) films

M. P. Kisselyuk, O. I. Vlasenko, P. O. Gentsar, M. V. Vuychik, M. S. Zayats, I. V. Kruglenko, O. S. Litvin, Ts. A. Kryskov

Journal:

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

10

Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan, G. V. Chucheva

Journal:

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

11

Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface

M. E. Rudinsky, A. A. Gutkin, P. N. Brunkov

Journal:

Year:

2010

Language:

english

File:

PDF, 514 KB

english, 2010

12

Development and photoelectric properties of In/p-Ag3AsS3surface-barrier structures

V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov

Journal:

Year:

2010

Language:

english

File:

PDF, 216 KB

english, 2010

13

Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator onp-type silicon

A. M. Ivanov, I. M. Kotina, M. S. Lasakov, N. B. Strokan, L. M. Tuhkonen

Journal:

Year:

2010

Language:

english

File:

PDF, 188 KB

english, 2010

14

Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode

M. A. Remnev, I. Yu. Kateev, V. F. Elesin

Journal:

Year:

2010

Language:

english

File:

PDF, 250 KB

english, 2010

15

Raman studies of silicon nanocrystals embedded in silicon suboxide layers

N. E. Maslova, A. A. Antonovsky, D. M. Zhigunov, V. Yu. Timoshenko, V. N. Glebov, V. N. Seminogov

Journal:

Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

16

Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules

I. A. Belogorokhov, D. A. Mamichev, M. A. Dronov, V. E. Pushkarev, L. G. Tomilova, D. R. Khokhlov

Journal:

Year:

2010

Language:

english

File:

PDF, 324 KB

english, 2010

17

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser, N. D. Zakharov, P. Werner, U. Gösele, Yu. B. Samsonenko, G. E. Cirlin

Journal:

Year:

2010

Language:

english

File:

PDF, 492 KB

english, 2010

18

Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity

E. A. Konstantinova, V. Ya. Gayvoronskiy, V. Yu. Timoshenko, P. K. Kashkarov

Journal:

Year:

2010

Language:

english

File:

PDF, 178 KB

english, 2010

19

Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures

Ya. V. Terent’ev, M. S. Mukhin, V. A. Solov’ev, A. N. Semenov, B. Ya. Meltser, A. A. Usikova, S. V. Ivanov

Journal:

Year:

2010

Language:

english

File:

PDF, 180 KB

english, 2010

20

Photoluminescence of nitro-substituted europium (III) phthalocyanines

A. V. Ziminov, Yu. A. Polevaya, T. A. Jourre, S. M. Ramsh, M. M. Mezdrogina, N. K. Poletaev

Journal:

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

21

A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum

A. D. Remenyuk, T. K. Zvonareva, I. T. Serenkov, V. I. Sakharov, T. S. Perova, J. Wasyluk

Journal:

Year:

2010

Language:

english

File:

PDF, 208 KB

english, 2010

22

Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, M. P. Kiselyuk, N. V. Yaroshenko

Journal:

Year:

2010

Language:

english

File:

PDF, 214 KB

english, 2010

23

Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells

S. A. Mintairov, V. M. Andreev, V. M. Emelyanov, N. A. Kalyuzhnyy, N. K. Timoshina, M. Z. Shvarts, V. M. Lantratov

Journal:

Year:

2010

Language:

english

File:

PDF, 209 KB

english, 2010

24

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, A. V. Chuyas, A. E. Yunovich, E. D. Vasileva, D. A. Bauman, V. V. Uelin, B. S. Yavich

Journal:

Year:

2010

Language:

english

File:

PDF, 228 KB

english, 2010

25

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai

Journal:

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

26

Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, A. V. Rozkov, N. M. Shmidt, Sh. A. Yusupova, J. H. Je

Journal:

Year:

2010

Language:

english

File:

PDF, 427 KB

english, 2010

27

Relaxation of crystal lattice parameters and structural ordering in InxGa1 −xAs epitaxial alloys

P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov

Journal:

Year:

2010

Language:

english

File:

PDF, 460 KB

english, 2010

28

Properties of ZnO whiskers under CO2-laser irradiation

P. S. Shkumbatyuk

Journal:

Year:

2010

Language:

english

File:

PDF, 859 KB

english, 2010

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