Volume 45; Issue 8

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Semiconductors
Volume 45; Issue 8

Semiconductors

Volume 45; Issue 8

1

Anodization of nanoscale Si layers in silicon-on-insulator structures

V. A. Antonov, E. V. Spesivtsev, I. E. Tyschenko

Journal:

Year:

2011

Language:

english

File:

PDF, 190 KB

english, 2011

2

Study of the influence of the sulfide and ultraviolet treatment of then-i-GaAs surface on the parameters of ohmic contacts

S. M. Avdeev, E. V. Erofeev, V. A. Kagadei

Journal:

Year:

2011

Language:

english

File:

PDF, 366 KB

english, 2011

3

Mechanisms of charge transport in anisotypen-TiO2/p-CdTe heterojunctions

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk, K. S. Ulyanytsky, B. N. Gritsyuk

Journal:

Year:

2011

Language:

english

File:

PDF, 227 KB

english, 2011

4

Electronic states in epitaxial graphene fabricated on silicon carbide

Journal:

Year:

2011

Language:

english

File:

PDF, 257 KB

english, 2011

5

Treatment of the surface of blanks for fabrication of CdZnTe-based detectors

O. A. Fedorenko, N. G. Dubina, V. A. Khristyan, I. S. Terzin

Journal:

Year:

2011

Language:

english

File:

PDF, 252 KB

english, 2011

6

Electrical properties of thin-film composites based on silicon and polypropylene

Sh. M. Gasanli, A. Y. Imanova, U. F. Samedova

Journal:

Year:

2011

Language:

english

File:

PDF, 162 KB

english, 2011

7

Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

A. O. Golubok, Yu. B. Samsonenko, I. S. Mukhin, A. D. Buravlev, G. E. Cirlin

Journal:

Year:

2011

Language:

english

File:

PDF, 632 KB

english, 2011

8

Photosensitive thin-film In/p-PbxSn1 −xS Schottky barriers: Fabrication and properties

V. F. Gremenok, V. Yu. Rud’, Yu. V. Rud’, S. A. Bashkirov, V. A. Ivanov

Journal:

Year:

2011

Language:

english

File:

PDF, 499 KB

english, 2011

9

Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3impurities

A. I. Isayev, S. I. Mekhtiyeva, S. N. Garibova, R. I. Alekperov, V. Z. Zeynalov

Journal:

Year:

2011

Language:

english

File:

PDF, 185 KB

english, 2011

10

Ga2O3films formed by electrochemical oxidation

V. M. Kalygina, A. N. Zarubin, Ye. P. Nayden, V. A. Novikov, Y. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

Journal:

Year:

2011

Language:

english

File:

PDF, 573 KB

english, 2011

11

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles

N. N. Kononov, S. G. Dorofeev, A. A. Ishchenko, R. A. Mironov, V. G. Plotnichenko, E. M. Dianov

Journal:

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

12

Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors

M. A. Mehrabova, R. S. Madatov

Journal:

Year:

2011

Language:

english

File:

PDF, 263 KB

english, 2011

13

Dispersion of the refractive index of epitaxial Pb1 −xEuxTe (0 ≤x≤ 1) alloy layers below the absorption edge

D. A. Pashkeev, Yu. G. Selivanov, E. G. Chizhevskii, D. B. Stavrovskii, I. I. Zasavitskiy

Journal:

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

14

Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals

Yu. V. Ryabchikov, I. A. Belogorokhov, M. B. Gongalskii, L. A. Osminkina, V. Yu. Timoshenko

Journal:

Year:

2011

Language:

english

File:

PDF, 195 KB

english, 2011

15

Superionic conductivity in TlGaTe2crystals

R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov, E. M. Qocayev, F. T. Salmanov

Journal:

Year:

2011

Language:

english

File:

PDF, 278 KB

english, 2011

16

Eddy currents appearing in ap-njunction in a high microwave field

S. H. Shamirzaev, G. Gulyamov, M. G. Dadamirzaev, A. G. Gulyamov

Journal:

Year:

2011

Language:

english

File:

PDF, 178 KB

english, 2011

17

Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field

E. P. Sinyavskii, S. A. Karapetyan

Journal:

Year:

2011

Language:

english

File:

PDF, 185 KB

english, 2011

18

Photoluminescence in silicon implanted with erbium ions at an elevated temperature

N. A. Sobolev, A. E. Kalyadin, E. I. Shek, V. I. Sakharov, I. T. Serenkov, V. I. Vdovin, E. O. Parshin, M. I. Makoviichuk

Journal:

Year:

2011

Language:

english

File:

PDF, 163 KB

english, 2011

19

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskii, M. S. Buyalo, Yu. M. Zadiranov, E. L. Portnoi

Journal:

Year:

2011

Language:

english

File:

PDF, 325 KB

english, 2011

20

Piezoelectric effect in GaAs nanowires

I. P. Soshnikov, Dm. E. Afanas’ev, V. A. Petrov, G. E. Cirlin, A. D. Bouravlev, Yu. B. Samsonenko, A. Khrebtov, E. M. Tanklevskaya, I. A. Seleznev

Journal:

Year:

2011

Language:

english

File:

PDF, 446 KB

english, 2011

21

The nature of electrical interaction of Schottky contacts

Journal:

Year:

2011

Language:

english

File:

PDF, 793 KB

english, 2011

22

Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon

Yu. A. Zharova, G. V. Fedulova, E. V. Astrova, A. V. Baldycheva, V. A. Tolmachev, T. S. Perova

Journal:

Year:

2011

Language:

english

File:

PDF, 1.18 MB

english, 2011

23

Doping of the Bi1.9Sb0.1Te3solid solution with Sn impurity

M. K. Zhitinskaya, S. A. Nemov, V. R. Muhtarov, T. E. Svechnikova

Journal:

Year:

2011

Language:

english

File:

PDF, 221 KB

english, 2011