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Volume 46; Issue 10
Main
Semiconductors
Volume 46; Issue 10
Semiconductors
Volume 46; Issue 10
1
On the active conductivity of a three-barrier resonant-tunneling structure and optimization of quantum cascade laser operation
Tkach, N. V.
,
Seti, Ju. A.
,
Matijek, V. A.
,
Boyko, I. V.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 281 KB
Your tags:
english, 2012
2
Device characteristics of long-wavelength lasers based on self-organized quantum dots
Zhukov, A. E.
,
Maksimov, M. V.
,
Kovsh, A. R.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 599 KB
Your tags:
english, 2012
3
Growth of 4Hsilicon carbide crystals on a (11( ar 2 )2) seed
Fadeev, A. Yu.
,
Lebedev, A. O.
,
Tairov, Yu. M.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 1.13 MB
Your tags:
english, 2012
4
Comparative assessment of III–V heterostructure and silicon underlap double gate MOSFETs
Pardeshi, Hemant
,
Raj, Godwin
,
Pati, Sudhansu Kumar
,
Mohankumar, N.
,
Sarkar, Chandan Kumar
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 272 KB
Your tags:
english, 2012
5
Creation and photoelectric properties of Ox/p-InAs heterostructures
Rudâ, V. Yu.
,
Rudâ, Yu. V.
,
Terukov, E. I.
,
Ushakova, T. N.
,
Serginov, M. S.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 199 KB
Your tags:
english, 2012
6
Small-signal field effect in GaAs/InAs quantum-dot heterostructures
Tikhov, S. V.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 225 KB
Your tags:
english, 2012
7
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Tsatsulnikov, A. F.
,
Lundin, W. V.
,
Zavarin, E. E.
,
Nikolaev, A. E.
,
Sakharov, A. V.
,
Rozhavskaya, M. M.
,
Usov, S. O.
,
Brunkov, P. N.
,
Synitsin, M. A.
,
Davydov, D. V.
,
Mizerov, M. N.
,
Cherkashin, N. A
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 518 KB
Your tags:
english, 2012
8
Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes
Kabanov, V. V.
,
Lebiadok, Ye. V.
,
Ryabtsev, G. I.
,
Smal, A. S.
,
Shchemelev, M. A.
,
Vinokurov, D. A.
,
Slipchenko, S. O.
,
Sokolova, Z. N.
,
Tarasov, I. S.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 235 KB
Your tags:
english, 2012
9
Isochronous annealing ofn-Si samples irradiated with 25-MeV protons
T. A. Pagava, M. G. Beridze, N. I. Maisuradze
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 247 KB
Your tags:
english, 2012
10
Transport phenomena in the anisotropic layered compounds MeBi4Te7(Me = Ge, Pb, Sn)
M. K. Zhitinskaya, S. A. Nemov, N. M. Blagih, L. E. Shelimova…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 310 KB
Your tags:
english, 2012
11
On superparamagnetism in quasi-one-dimensional semiconductor antiferromagnets TlFeS2and TlFeSe2
R. G. Veliyev
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 162 KB
Your tags:
english, 2012
12
Study of the impurity photoconductivity and luminescence in ZnSe:Ni crystals in the visible spectral region
Yu. A. Nitsuk, Yu. F. Vaksman, V. V. Yatsun
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 222 KB
Your tags:
english, 2012
13
Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions
I. E. Tyschenko, V. A. Volodin
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 293 KB
Your tags:
english, 2012
14
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions
P. V. Lukin, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 243 KB
Your tags:
english, 2012
15
Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
Huanting Chen, Arno Keppens, Peter Hanselaer, Yijun Lu, Yulin Gao…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 517 KB
Your tags:
english, 2012
16
850-nm diode lasers based on AlGaAsP/GaAs heterostructures
D. A. Vinokurov, V. A. Kapitonov, A. V. Lyutetskiy, D. N. Nikolaev…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 183 KB
Your tags:
english, 2012
17
Influence of source-to-substrate distance on the properties of ZnS films grown by close-space sublimation
M. Ashrat, M. Mehmood, A. Qayyum
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 355 KB
Your tags:
english, 2012
18
Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savelyev…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 214 KB
Your tags:
english, 2012
19
InGaN/GaN heterostructures grown by submonolayer deposition
A. F. Tsatsulnikov, W. V. Lundin, E. E. Zavarin, A. V. Sakharov…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 630 KB
Your tags:
english, 2012
20
Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
I. I. Izhnin, K. D. Mynbaev, M. V. Yakushev, A. I. Izhnin, E. I. Fitsych…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 215 KB
Your tags:
english, 2012
21
Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods
N. G. Almasov,O. Yu. Prikhodko,K. D. Tsendin
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 149 KB
Your tags:
english, 2012
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