Volume 46; Issue 11

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Semiconductors
Volume 46; Issue 11

Semiconductors

Volume 46; Issue 11

1

Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy

Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.

Journal:

Year:

2012

Language:

english

File:

PDF, 262 KB

english, 2012

2

Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry

Drozdov, Yu. N., Drozdov, M. N., Daniltsev, V. M., Khrikin, O. I., Yunin, P. A.

Journal:

Year:

2012

Language:

english

File:

PDF, 169 KB

english, 2012

3

Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

Murel, A. V., Novikov, A. V., Shashkin, V. I., Yurasov, D. V.

Journal:

Year:

2012

Language:

english

File:

PDF, 194 KB

english, 2012

4

On the problem of lasing in traps for the bose condensation of dipolar excitons

P. A. Kalinin, V. V. Kocharovsky, Vl. V. Kocharovsky

Journal:

Year:

2012

Language:

english

File:

PDF, 246 KB

english, 2012

5

Study of lifetimes and photoconductivity relaxation in heterostructures with HgxCd1 −xTe/CdyHg1 −yTe quantum wells

S. V. Morozov, M. S. Joludev, A. V. Antonov, V. V. Rumyantsev…

Journal:

Year:

2012

Language:

english

File:

PDF, 202 KB

english, 2012

6

Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers

Yu. G. Sadofyev

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Year:

2012

Language:

english

File:

PDF, 166 KB

english, 2012

7

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

B. A. Andreev, Z. F. Krasilnik, D. I. Kryzhkov, V. P. Kuznetsov…

Journal:

Year:

2012

Language:

english

File:

PDF, 185 KB

english, 2012

8

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

S. V. Morozov, D. I. Kryzhkov, V. I. Gavrilenko, A. N. Yablonsky…

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Year:

2012

Language:

english

File:

PDF, 307 KB

english, 2012

9

Prototypes of photovoltaic cells based on subphthalocyanine with a lower buffer layer

G. L. Pakhomov, V. V. Travkin, A. N. Tropanova, E. Yu. Gudkov…

Journal:

Year:

2012

Language:

english

File:

PDF, 531 KB

english, 2012

10

Features of impurity-photoconductivity relaxation in boron-doped silicon

V. V. Rumyantsev, S. V. Morozov, K. E. Kudryavtsev, V. I. Gavrilenko…

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Year:

2012

Language:

english

File:

PDF, 215 KB

english, 2012

11

Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier

K. E. Spirin, K. P. Kalinin, S. S. Krishtopenko, K. V. Maremyanin…

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Year:

2012

Language:

english

File:

PDF, 267 KB

english, 2012

12

Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells

D. V. Ushakov, Yu. G. Sadofyev, N. Samal

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Year:

2012

Language:

english

File:

PDF, 207 KB

english, 2012

13

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

A. N. Yablonskiy, B. A. Andreev, D. I. Kryzhkov, V. P. Kuznetsov…

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Year:

2012

Language:

english

File:

PDF, 198 KB

english, 2012

14

Diagnostics of quantum cascade structures by optical methods in the near infrared region

D. I. Kryzhkov, S. V. Morozov, D. M. Gaponova, S. M. Sergeev…

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Year:

2012

Language:

english

File:

PDF, 174 KB

english, 2012

15

Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots

A. V. Antonov, V. M. Daniltsev, M. N. Drozdov, Yu. N. Drozdov…

Journal:

Year:

2012

Language:

english

File:

PDF, 161 KB

english, 2012

16

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev…

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Year:

2012

Language:

english

File:

PDF, 508 KB

english, 2012

17

Electro-optical trap for dipolar excitons

A. V. Gorbunov, V. B. Timofeev

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Year:

2012

Language:

english

File:

PDF, 306 KB

english, 2012

18

Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals

V. L. Berkovits, A. B. Gordeeva, T. V. L’vova, V. P. Ulin

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Year:

2012

Language:

english

File:

PDF, 179 KB

english, 2012

19

Investigation of the structure of the ground state of lithium donor centers in silicon enriched in28Si isotope and the influence of internal strain in the crystal on this structure

A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov…

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Year:

2012

Language:

english

File:

PDF, 214 KB

english, 2012

20

Tunneling and current characteristics of two-miniband superlattice

Yu. Yu. Romanova, M. L. Orlov, Yu. A. Romanov

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Year:

2012

Language:

english

File:

PDF, 258 KB

english, 2012

21

Parametric generation of high-frequency harmonics in semiconductor superlattices

Yu. Yu. Romanova

Journal:

Year:

2012

Language:

english

File:

PDF, 288 KB

english, 2012

22

Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm…

Journal:

Year:

2012

Language:

english

File:

PDF, 449 KB

english, 2012