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Volume 46; Issue 9
Main
Semiconductors
Volume 46; Issue 9
Semiconductors
Volume 46; Issue 9
1
Electrical properties of anisotype heterojunctionsn-CdZnO/p-CdTe
Brus, V. V.
,
Ilashchuk, M. I.
,
Khomyak, V. V.
,
Kovalyuk, Z. D.
,
Maryanchuk, P. D.
,
Ulyanytsky, K. S.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 272 KB
Your tags:
english, 2012
2
Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors
Osipov, K. Yu.
,
Velikovskiy, L. E.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 354 KB
Your tags:
english, 2012
3
Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)
Shashkin, I. S.
,
Vinokurov, D. A.
,
Lyutetskiy, A. V.
,
Nikolaev, D. N.
,
Pikhtin, N. A.
,
Rudova, N. A.
,
Sokolova, Z. N.
,
Slipchenko, S. O.
,
Stankevich, A. L.
,
Shamakhov, V. V.
,
Veselov, D. A.
,
Bakhvalov
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 201 KB
Your tags:
english, 2012
4
On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene
Davydov, S. Yu.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 167 KB
Your tags:
english, 2012
5
Transformation of a SiC/por-SiC/TiO2structure during rapid thermal annealing
Konakova, R. V.
,
Kolomys, O. F.
,
Lytvyn, O. S.
,
Okhrimenko, O. B.
,
Strelchuk, V. V.
,
Svetlichnyi, A. M.
,
Linets, L. G.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 280 KB
Your tags:
english, 2012
6
Terahertz emission upon the interband excitation of GaN layers
Zakharâin, A. O.
,
Bobylev, A. V.
,
Andrianov, A. V.
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 187 KB
Your tags:
english, 2012
7
Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of AXB8 −Xmaterials on the energy of the inverse adsorption piezoelectric effect
O. A. Fedyaeva
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 167 KB
Your tags:
english, 2012
8
Investigation of the promising thermoelectric compound CuAlO2by the method of nuclear quadrupole resonance in Cu
V. L. Matukhin, I. H. Khabibullin, D. A. Shulgin, S. V. Schmidt…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 193 KB
Your tags:
english, 2012
9
Features of the conduction mechanisms of then-HfNiSn semiconductor heavily doped with the Co acceptor impurity
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 279 KB
Your tags:
english, 2012
10
Conductivity of Se95As5chalcogenide glassy semiconductor layers containing the EuF3rare-earth impurity in high electric fields
A. I. Isayev, S. I. Mekhtieva, S. N. Garibova, V. Z. Zeynalov
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 205 KB
Your tags:
english, 2012
11
Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon
I. M. Antropov, A. S. Semisalova, E. A. Konstantinova, N. S. Perov…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 155 KB
Your tags:
english, 2012
12
On the band gap in (In2S3)x(CuIn5S8)1 −xalloy single crystals
I. V. Bodnar, V. V. Shatalova
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 223 KB
Your tags:
english, 2012
13
Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor
Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Jen-Yi Jen, Yiming Li
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 1.46 MB
Your tags:
english, 2012
14
Raman scattering in the Bi2(Te0.9Se0.1)3solid solution films
N. A. Abdullaev, N. M. Abdullaev, A. M. Kerimova, S. Sh. Kahramanov…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 531 KB
Your tags:
english, 2012
15
Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials
Z. D. Kovalyuk, O. N. Sydor, G. I. Lastivka, A. G. Khandozhko
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 289 KB
Your tags:
english, 2012
16
Refined model for the current-voltage characteristics of quantum-well infrared photodetectors
V. B. Kulikov
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 201 KB
Your tags:
english, 2012
17
Rashba spin splitting and exchange enhancement of thegfactor in InAs/AlSb heterostructures with a two-dimensional electron gas
S. S. Krishtopenko, K. P. Kalinin, V. I. Gavrilenko, Yu. G. Sadofyev…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 315 KB
Your tags:
english, 2012
18
Nature of the electronic component of the thermal phase transition in VO2films
A. V. Ilinskiy, O. E. Kvashenkina, E. B. Shadrin
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 437 KB
Your tags:
english, 2012
19
Electrical and gas-sensitive properties of a SnO2-based nanocomposite with multiwalled carbon nanotubes
S. I. Rembeza, Yu. V. Shmatova, T. V. Svistova, E. S. Rembeza…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 168 KB
Your tags:
english, 2012
20
n-Si bifacial concentrator solar cell
G. G. Untila, T. N. Kost, A. B. Chebotareva, M. B. Zaks, A. M. Sitnikov…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 285 KB
Your tags:
english, 2012
21
Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread
M. E. Levinshtein, T. T. Mnatsakanov, S. N. Yurkov, J. W. Palmour
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 246 KB
Your tags:
english, 2012
22
Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)
I. S. Shashkin, D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev…
Journal:
Semiconductors
Year:
2012
Language:
english
File:
PDF, 162 KB
Your tags:
english, 2012
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