Volume 46; Issue 9

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Semiconductors
Volume 46; Issue 9

Semiconductors

Volume 46; Issue 9

1

Electrical properties of anisotype heterojunctionsn-CdZnO/p-CdTe

Brus, V. V., Ilashchuk, M. I., Khomyak, V. V., Kovalyuk, Z. D., Maryanchuk, P. D., Ulyanytsky, K. S.

Journal:

Year:

2012

Language:

english

File:

PDF, 272 KB

english, 2012

2

Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors

Osipov, K. Yu., Velikovskiy, L. E.

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Year:

2012

Language:

english

File:

PDF, 354 KB

english, 2012

3

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rudova, N. A., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bakhvalov

Journal:

Year:

2012

Language:

english

File:

PDF, 201 KB

english, 2012

4

On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene

Davydov, S. Yu.

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Year:

2012

Language:

english

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PDF, 167 KB

english, 2012

5

Transformation of a SiC/por-SiC/TiO2structure during rapid thermal annealing

Konakova, R. V., Kolomys, O. F., Lytvyn, O. S., Okhrimenko, O. B., Strelchuk, V. V., Svetlichnyi, A. M., Linets, L. G.

Journal:

Year:

2012

Language:

english

File:

PDF, 280 KB

english, 2012

6

Terahertz emission upon the interband excitation of GaN layers

Zakharâin, A. O., Bobylev, A. V., Andrianov, A. V.

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Year:

2012

Language:

english

File:

PDF, 187 KB

english, 2012

7

Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of AXB8 −Xmaterials on the energy of the inverse adsorption piezoelectric effect

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Year:

2012

Language:

english

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PDF, 167 KB

english, 2012

8

Investigation of the promising thermoelectric compound CuAlO2by the method of nuclear quadrupole resonance in Cu

V. L. Matukhin, I. H. Khabibullin, D. A. Shulgin, S. V. Schmidt…

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Year:

2012

Language:

english

File:

PDF, 193 KB

english, 2012

9

Features of the conduction mechanisms of then-HfNiSn semiconductor heavily doped with the Co acceptor impurity

V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil…

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Year:

2012

Language:

english

File:

PDF, 279 KB

english, 2012

10

Conductivity of Se95As5chalcogenide glassy semiconductor layers containing the EuF3rare-earth impurity in high electric fields

A. I. Isayev, S. I. Mekhtieva, S. N. Garibova, V. Z. Zeynalov

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Year:

2012

Language:

english

File:

PDF, 205 KB

english, 2012

11

Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon

I. M. Antropov, A. S. Semisalova, E. A. Konstantinova, N. S. Perov…

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Year:

2012

Language:

english

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PDF, 155 KB

english, 2012

12

On the band gap in (In2S3)x(CuIn5S8)1 −xalloy single crystals

I. V. Bodnar, V. V. Shatalova

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Year:

2012

Language:

english

File:

PDF, 223 KB

english, 2012

13

Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Jen-Yi Jen, Yiming Li

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Year:

2012

Language:

english

File:

PDF, 1.46 MB

english, 2012

14

Raman scattering in the Bi2(Te0.9Se0.1)3solid solution films

N. A. Abdullaev, N. M. Abdullaev, A. M. Kerimova, S. Sh. Kahramanov…

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Year:

2012

Language:

english

File:

PDF, 531 KB

english, 2012

15

Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials

Z. D. Kovalyuk, O. N. Sydor, G. I. Lastivka, A. G. Khandozhko

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Year:

2012

Language:

english

File:

PDF, 289 KB

english, 2012

16

Refined model for the current-voltage characteristics of quantum-well infrared photodetectors

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Year:

2012

Language:

english

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PDF, 201 KB

english, 2012

17

Rashba spin splitting and exchange enhancement of thegfactor in InAs/AlSb heterostructures with a two-dimensional electron gas

S. S. Krishtopenko, K. P. Kalinin, V. I. Gavrilenko, Yu. G. Sadofyev…

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Year:

2012

Language:

english

File:

PDF, 315 KB

english, 2012

18

Nature of the electronic component of the thermal phase transition in VO2films

A. V. Ilinskiy, O. E. Kvashenkina, E. B. Shadrin

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Year:

2012

Language:

english

File:

PDF, 437 KB

english, 2012

19

Electrical and gas-sensitive properties of a SnO2-based nanocomposite with multiwalled carbon nanotubes

S. I. Rembeza, Yu. V. Shmatova, T. V. Svistova, E. S. Rembeza…

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Year:

2012

Language:

english

File:

PDF, 168 KB

english, 2012

20

n-Si bifacial concentrator solar cell

G. G. Untila, T. N. Kost, A. B. Chebotareva, M. B. Zaks, A. M. Sitnikov…

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Year:

2012

Language:

english

File:

PDF, 285 KB

english, 2012

21

Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread

M. E. Levinshtein, T. T. Mnatsakanov, S. N. Yurkov, J. W. Palmour

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Year:

2012

Language:

english

File:

PDF, 246 KB

english, 2012

22

Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

I. S. Shashkin, D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev…

Journal:

Year:

2012

Language:

english

File:

PDF, 162 KB

english, 2012