Volume 50; Issue 3

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Semiconductors
Volume 50; Issue 3

Semiconductors

Volume 50; Issue 3

1

Photoluminescence and Confinement of Excitons in Disordered Porous Films

Bondar, N. V., Brodin, M. S., Brodin, A. M., Matveevskaya, N. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 716 KB

english, 2016

2

Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4

Dzhakhangirli, Z. A., Kerimova, T. G., Abdullaev, N. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 377 KB

english, 2016

3

Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms

Peleshchak, R. M., Lazurchak, I. I., Kuzyk, O. V., Dan’kiv, O. O., Zegrya, G. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 252 KB

english, 2016

4

Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume

Belyaev, A. P., Antipov, V. V., Rubets, V. P.

Journal:

Year:

2016

Language:

english

File:

PDF, 653 KB

english, 2016

5

Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy

A. S. Parshin,S. A. Kushchenkov,O. P. Pchelyakov,Yu. L. Mikhlin

Journal:

Year:

2016

Language:

english

File:

PDF, 546 KB

english, 2016

6

Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction

Orletsky, I. G., Ilashchuk, M. I., Brus, V. V., Marianchuk, P. D., Solovan, M. M., Kovalyuk, Z. D.

Journal:

Year:

2016

Language:

english

File:

PDF, 533 KB

english, 2016

7

Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGexAlloy Layers: Production and Some Properties

Detochenko, A. P., Denisov, S. A., Drozdov, M. N., Mashin, A. I., Gavva, V. A., Bulanov, A. D., Nezhdanov, A. V., Ezhevskii, A. A., Stepikhova, M. V., Chalkov, V. Yu., Trushin, V. N., Shengurov, D. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 412 KB

english, 2016

8

On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition

Klochko, N. P., Klepikova, K. S., Kopach, V. R., Khrypunov, G. S., Myagchenko, Yu. O., Melnychuk, E. E., Lyubov, V. M., Kopach, A. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.65 MB

english, 2016

9

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

Chubenko, E. B., Redko, S. V., Sherstnyov, A. I., Petrovich, V. A., Kotov, D. A., Bondarenko, V. P.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

10

Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well

Hasanov, Kh. A., Huseynov, J. I., Dadashova, V. V., Aliyev, F. F.

Journal:

Year:

2016

Language:

english

File:

PDF, 311 KB

english, 2016

11

Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion

Ken, O. S., Levitskii, V. S., Yavsin, D. A., Gurevich, S. A., Davydov, V. Yu., Sreseli, O. M.

Journal:

Year:

2016

Language:

english

File:

PDF, 910 KB

english, 2016

12

High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time

Gusev, A. I., Lyubutin, S. K., Rukin, S. N., Tsyranov, S. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 902 KB

english, 2016

13

Microdisk Injection Lasers for the 1.27-μm Spectral Range

Kryzhanovskaya, N. V., Maximov, M. V., Blokhin, S. A., Bobrov, M. A., Kulagina, M. M., Troshkov, S. I., Zadiranov, Yu. M., Lipovskii, A. A., Moiseev, E. I., Kudashova, Yu. V., Livshits, D. A., Ustinov

Journal:

Year:

2016

Language:

english

File:

PDF, 493 KB

english, 2016

14

High-Voltage Silicon-Carbide Thyristor with ann-type Blocking Base

Levinshtein, M. E., Mnatsakanov, T. T., Yurkov, S. N., Tandoev, A. G., Ryu, Sei-Hyung, Palmour, J. W.

Journal:

Year:

2016

Language:

english

File:

PDF, 246 KB

english, 2016

15

Model of Adsorption on Amorphous Graphene

Davydov, S. Yu.

Journal:

Year:

2016

Language:

english

File:

PDF, 346 KB

english, 2016

16

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

Poklonski, N. A., Vyrko, S. A., Kovalev, A. I., Zabrodskii, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 471 KB

english, 2016

17

Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT

Swain, R., Jena, K., Lenka, T. R.

Journal:

Year:

2016

Language:

english

File:

PDF, 336 KB

english, 2016

18

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

Tarasova, E. A., Khananova, A. V., Obolensky, S. V., Zemlyakov, V. E., Sveshnikov, Yu. N., Egorkin, V. I., Ivanov, V. A., Medvedev, G. V., Smotrin, D. S.

Journal:

Year:

2016

Language:

english

File:

PDF, 500 KB

english, 2016

19

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

Yugov, A. A., Malahov, S. S., Donskov, A. A., Duhnovskii, M. P., Knyazev, S. N., Kozlova, Yu. P., Yugova, T. G., Belogorokhov, I. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 932 KB

english, 2016

20

Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

Yakovlev, G. E., Frolov, D. S., Zubkova, A. V., Levina, E. E., Zubkov, V. I., Solomonov, A. V., Sterlyadkin, O. K., Sorokin, S. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 326 KB

english, 2016

21

On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC

Kyuregyan, A. S.

Journal:

Year:

2016

Language:

english

File:

PDF, 286 KB

english, 2016

22

Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures

E. P. Domashevskaya,E. A. Mikhailyuk,T. V. Prokopova,N. N. Bezryadin

Journal:

Year:

2016

Language:

english

File:

PDF, 338 KB

english, 2016

23

Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation

Journal:

Year:

2016

Language:

english

File:

PDF, 225 KB

english, 2016

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