Volume 50; Issue 5

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Semiconductors
Volume 50; Issue 5

Semiconductors

Volume 50; Issue 5

1

Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

Stefanovich, G. B., Pergament, A. L., Boriskov, P. P., Kuroptev, V. A., Stefanovich, T. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 356 KB

english, 2016

2

Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon

Guk, I. V., Shandybina, G. D., Yakovlev, E. B.

Journal:

Year:

2016

Language:

english

File:

PDF, 259 KB

english, 2016

3

Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

Kozlovskiy, V. I., Krivobok, V. S., Kuznetsov, P. I., Nikolaev, S. N., Onistchenko, E. E., Pruchkina, A. A., Temiryazev, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.12 MB

english, 2016

4

Anisotropy of the thermal expansion of CuIn5Se8single crystals in two structural modifications

Journal:

Year:

2016

Language:

english

File:

PDF, 349 KB

english, 2016

5

Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films

Avilov, V. I., Ageev, O. A., Konoplev, B. G., Smirnov, V. A., Solodovnik, M. S., Tsukanova, O. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 707 KB

english, 2016

6

Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide

Il’in, A. S., Fantina, N. P., Martyshov, M. N., Forsh, P. A., Chizhov, A. S., Rumyantseva, M. N., Gaskov, A. M., Kashkarov, P. K.

Journal:

Year:

2016

Language:

english

File:

PDF, 307 KB

english, 2016

7

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

Zhukov, A. E., Cirlin, G. E., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kaliteevski, M. A., Ivanov, K. A., Kryzhanovskaya, N. V., Maximov, M. V., Alferov, Zh. I.

Journal:

Year:

2016

Language:

english

File:

PDF, 378 KB

english, 2016

8

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

Egorov, A. Yu., Karachinsky, L. Ya., Novikov, I. I., Babichev, A. V., Nevedomskiy, V. N., Bugrov, V. E.

Journal:

Year:

2016

Language:

english

File:

PDF, 634 KB

english, 2016

9

GaAs/InGaAsN heterostructures for multi-junction solar cells

Nikitina, E. V., Gudovskikh, A. S., Lazarenko, A. A., Pirogov, E. V., Sobolev, M. S., Zelentsov, K. S., Morozov, I. A., Egorov, A. Yu.

Journal:

Year:

2016

Language:

english

File:

PDF, 439 KB

english, 2016

10

Photodiode 1 × 64 linear array based on a doublep-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure

Il’inskaya, N. D., Karandashev, S. A., Karpukhina, N. G., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus, N. M., Usikova, A. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 875 KB

english, 2016

11

Radiation-stimulated processes in transistor temperature sensors

Pavlyk, B. V., Grypa, A. S.

Journal:

Year:

2016

Language:

english

File:

PDF, 399 KB

english, 2016

12

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Levinshtein, M. E., Ivanov, P. A., Zhang, Q. J., Palmour, J. W.

Journal:

Year:

2016

Language:

english

File:

PDF, 442 KB

english, 2016

13

Study of the correlation properties of the surface structure ofnc-Si/a-Si:H films with different fractions of the crystalline phase

Alpatov, A. V., Vikhrov, S. P., Kazanskii, A. G., Lyaskovskii, V. L., Rybin, N. B., Rybina, N. V., Forsh, P. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.22 MB

english, 2016

14

Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Yunin, P. A., Drozdov, M. N., Vikhrova, O. V., Nekorkin, S. M., Zvonkov, B. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 522 KB

english, 2016

15

On the laser detachment ofn-GaN films from substrates, based on the strong absorption of IR light by free charge carriers inn+-GaN substrates

Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N.,

Journal:

Year:

2016

Language:

english

File:

PDF, 867 KB

english, 2016

16

A new simulation model for inhomogeneous Au/n-GaN structure

Kavasoglu, Nese, Kavasoglu, Abdulkadir Sertap, Metin, Bengul

Journal:

Year:

2016

Language:

english

File:

PDF, 354 KB

english, 2016

17

Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure

Gusev, A. I., Sadovnikov, S. I.

Journal:

Year:

2016

Language:

english

File:

PDF, 572 KB

english, 2016

18

Biosensor properties of SOI nanowire transistors with a PEALD Al2O3dielectric protective layer

Popov, V. P., Ilnitskii, M. A., Zhanaev, E. D., Myakon’kich, A. V., Rudenko, K. V., Glukhov, A. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 379 KB

english, 2016

19

Atomic steps on an ultraflat Si(111) surface upon sublimation

Sitnikov, S. V., Latyshev, A. V., Kosolobov, S. S.

Journal:

Year:

2016

Language:

english

File:

PDF, 530 KB

english, 2016

20

Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals

Sobolev, V. V., Perevoshchikov, D. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 386 KB

english, 2016

21

Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-Koxide/SiO2/Si structure

Vexler, M. I., Grekhov, I. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 595 KB

english, 2016

22

Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Sokolova, Z. N., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Tarasov, I. S., Asryan, L. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 227 KB

english, 2016

23

Lifetime of excitons localized in Si nanocrystals in amorphous silicon

O. B. Gusev,A. V. Belolipetskiy,I. N. Yassievich,A. V. Kukin…

Journal:

Year:

2016

Language:

english

File:

PDF, 225 KB

english, 2016

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