Volume 10; Issue 2

Solid-State Electronics

Volume 10; Issue 2
1

Noise and oscillations in gold-doped germanium photodiodes

P.T. Bolwijn, C.v.d. Rijst, W.G. van Ast, T. Lam
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 1.35 MB
english, 1967
3

Interaction of two avalanching layers in GaAs

K. Weiser
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 308 KB
english, 1967
4

SiGaP heterojunctions

G. Zeidenbergs, R.L. Anderson
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 912 KB
english, 1967
5

Room temperature electroluminescence in semi-insulating zinc telluride

D.I. Kennedy, M.J. Russ
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 243 KB
english, 1967
6

Noise in space-charge-limited solid-state devices

S.T. Hsu, A. van der Ziel, E.R. Chenette
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 478 KB
english, 1967
7

Construction and performance of epitaxial transferred electron oscillators

I.B. Bott, C. Hilsum, K.C.H. Smith
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 532 KB
english, 1967
8

Recombination in silicon p−π−n diodes

P.G. Wilson
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 809 KB
english, 1967
11

Epitaxial hemispherical electroluminescent diode

H.J. Henkel, G. Ziegler
Journal:
Solid-State Electronics
Year:
1967
Language:
english
File:
PDF, 186 KB
english, 1967