Volume 16; Issue 11

Solid-State Electronics

Volume 16; Issue 11
1

MOS threshold shifting by ion implantation

Year:
1973
Language:
english
File:
PDF, 992 KB
english, 1973
2

Effects of electron bombardment on the noise in junction gate field effect transistors

Year:
1973
Language:
english
File:
PDF, 650 KB
english, 1973
3

Sperrfreie kontakte an indiumphosphid

Year:
1973
Language:
german
File:
PDF, 771 KB
german, 1973
4

Transport equations in heavily doped silicon, and the current gain of a bipolar transistor

Year:
1973
Language:
english
File:
PDF, 755 KB
english, 1973
5

Design criteria for c.w. Gunn oscillators with good frequency-temperature stability

Year:
1973
Language:
english
File:
PDF, 427 KB
english, 1973
6

Current thresholds in stripe-contact injection lasers

Year:
1973
Language:
english
File:
PDF, 235 KB
english, 1973
7

Comparison of models for redistribution of dopants in silicon during thermal oxidation

Year:
1973
Language:
english
File:
PDF, 376 KB
english, 1973
8

High capacity liquid phase epitaxy apparatus utilizing thin melts

Year:
1973
Language:
english
File:
PDF, 622 KB
english, 1973
9

A test for lateral nonuniformities in MOS devices using only capacitance curves

Year:
1973
Language:
english
File:
PDF, 999 KB
english, 1973
11

Flicker noise compensation in high-impedance MOSFET circuits

Year:
1973
Language:
english
File:
PDF, 130 KB
english, 1973
12

Aluminium spearing in silicon integrated circuits

Year:
1973
Language:
english
File:
PDF, 163 KB
english, 1973