Volume 18; Issue 6

Solid-State Electronics

Volume 18; Issue 6
2

Analysis of modified lateral PNP transistors

Year:
1975
Language:
english
File:
PDF, 792 KB
english, 1975
3

The small signal admittance of carbon implanted p-n diodes

Year:
1975
Language:
english
File:
PDF, 608 KB
english, 1975
4

Aluminum-silicon Schottky barriers as semiconductor targets for EBS devices

Year:
1975
Language:
english
File:
PDF, 1.18 MB
english, 1975
5

On the time dependency of the avalanche process in semiconductors

Year:
1975
Language:
english
File:
PDF, 560 KB
english, 1975
6

Electroluminescence in zinc selenide

Year:
1975
Language:
english
File:
PDF, 900 KB
english, 1975
7

Boron diffusion in polycrystalline silicon layers

Year:
1975
Language:
english
File:
PDF, 414 KB
english, 1975
8

A theoretical and experimental study of recombination in silicon p−n junctions

Year:
1975
Language:
english
File:
PDF, 760 KB
english, 1975
9

Thermal noise in ion-implanted MOSFETs

Year:
1975
Language:
english
File:
PDF, 178 KB
english, 1975
10

Energy levels and concentrations for platinum in silicon

Year:
1975
Language:
english
File:
PDF, 811 KB
english, 1975
11

A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

Year:
1975
Language:
english
File:
PDF, 999 KB
english, 1975
12

Solid state thermal control for spacecraft

Year:
1975
Language:
english
File:
PDF, 500 KB
english, 1975
13

Calculation of the switching time in junction diodes

Year:
1975
Language:
english
File:
PDF, 457 KB
english, 1975
15

Electron mobility empirically related to the phosphorus concentration in silicon

Year:
1975
Language:
english
File:
PDF, 199 KB
english, 1975