Volume 18; Issue 9

Solid-State Electronics

Volume 18; Issue 9
1

Low frequency conductance and capacitance measurements on MOS capacitors in weak inversion

Year:
1975
Language:
english
File:
PDF, 806 KB
english, 1975
2

Frequency response of the current multiplication process in MIS tunnel diodes

Year:
1975
Language:
english
File:
PDF, 772 KB
english, 1975
3

A compensation law for reverse-biassed ZnSe Schottky diodes

Year:
1975
Language:
english
File:
PDF, 229 KB
english, 1975
4

Carrier temperature effects in a p−n junction

Year:
1975
Language:
english
File:
PDF, 371 KB
english, 1975
5

Ge doped GaAs double heterojunction lasers with Si compensation

Year:
1975
Language:
english
File:
PDF, 206 KB
english, 1975
6

Interface charge characteristics of MOS structures with different metals on steam grown oxides

Year:
1975
Language:
english
File:
PDF, 997 KB
english, 1975
7

The role of elevated temperatures in the implantation of GaAs

Year:
1975
Language:
english
File:
PDF, 378 KB
english, 1975
8

Planar InSb photodiodes fabricated by Be and Mg ion implantation

Year:
1975
Language:
english
File:
PDF, 395 KB
english, 1975
9

The variation of impurity ionization with doping in heavily doped germanium

Year:
1975
Language:
english
File:
PDF, 171 KB
english, 1975
10

Solubility of gold in p-type silicon

Year:
1975
Language:
english
File:
PDF, 904 KB
english, 1975
11

Collection efficiency and transfer characteristics of CID image sensors

Year:
1975
Language:
english
File:
PDF, 567 KB
english, 1975
12

Characteristics of enhancement/depletion (E/D) gate MOSFET fabricated using ion implantation

Year:
1975
Language:
english
File:
PDF, 551 KB
english, 1975
13

Stromverstärkung in ZnSe/CdSe-photoleiterschichten

Year:
1975
Language:
german
File:
PDF, 572 KB
german, 1975
14

A model of ohmic contacts to semiconductors

Year:
1975
Language:
english
File:
PDF, 749 KB
english, 1975