Volume 2; Issue 4

Solid-State Electronics

Volume 2; Issue 4
1

Direct recombination in GaAs and some consequences in transistor design

S. Mayburg
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 523 KB
english, 1961
2

A low-resistance ohmic contact for silicon semiconductor devices

S.L. Matlow, E.L. Ralph
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 653 KB
english, 1961
4

Molten-diffused silicon transistors

Shoji Tauchi
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 849 KB
english, 1961
5

The potentialities of silicon and gallium arsenide solar batteries

T.S. Moss
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 764 KB
english, 1961
6

Injection electroluminescence

Albrecht G. Fischer
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 1.44 MB
english, 1961
7

Alpha cutoff frequency of junction transistors

J. Lindmayer, C. Wrigley
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 936 KB
english, 1961
8

Superconducting vanadium thin films

C.T. Thompson, J.F. Gerber
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 156 KB
english, 1961
9

Distribution of thermal-conversion centers in germanium with indiffused impurities

Kurt Lehovec
Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 181 KB
english, 1961
10

Papers to be published in future issues

Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 47 KB
english, 1961
11

List of contents and author index

Journal:
Solid-State Electronics
Year:
1961
Language:
english
File:
PDF, 251 KB
english, 1961