Volume 21; Issue 9

Solid-State Electronics

Volume 21; Issue 9
1

Photocapacitance of deep levels in GaAs:Cr and GaAs:O

Prahalad K. Vasudev, Richard H. Bube
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 376 KB
english, 1978
2

Noise due to donors in n-channel silicon JFETs

S.K. Kim, A. van der Ziel, L.M. Rucker
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 135 KB
english, 1978
3

Analysis of the interaction of an electron beam with a solar cell—II

Oldwig von Roos
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 864 KB
english, 1978
5

Silicon carbide blue-emitting diodes produced by liquid-phase epitaxy

W. v. Münch, W. Kürzinger
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 369 KB
english, 1978
6

Metal-N-type semiconductor ohmic contact with a shallow N+ surface layer

R.S. Popović
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 512 KB
english, 1978
7

Photocurrent loss within the depletion region of polycrystalline solar cells

Martin A. Green
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 561 KB
english, 1978
9

Charge distributions in silicon nitride of MNOS devices

N. Endo
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 392 KB
english, 1978
11

On the analysis of pulsed MOS capacitance measurement

K.S. Rabbani, D.R. Lamb
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 290 KB
english, 1978
12

The fluctuations of the returning carriers current of the reverse biased p-n junction

M.M. Jevtić
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 442 KB
english, 1978
13

Inconsistencies in the original form of the fletcher boundary conditions

Allen Nussbaum
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 203 KB
english, 1978
14

Effect of temperature on Baritt diode large signal performance

Miroslav Karasek
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 257 KB
english, 1978
15

The early voltage of a lateral PNP transistor

S.D.S. Malhi, C.A.T. Salama
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 175 KB
english, 1978
17

The use of a four-point probe for profiling sub-micron layers

R.S. Huang, P.H. Ladbrooke
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 484 KB
english, 1978
18

GaAs-MOS capacitor with native oxide film anodized in nonaqueous electrolyte

A. Shimano, A. Moritani, J. Nakai
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 394 KB
english, 1978
19

Experimental response of MOS devices to a fast linear voltage ramp

K. Board, J.G. Simmons, P.G.C. Allman
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 479 KB
english, 1978
20

A technique for producing polysilicon patterns with bevelled edge profiles using wet etching

B.A. Boxall
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 210 KB
english, 1978
21

Linearized output stage for SCCDs using a highly doped region

H. Klar, M. Mauthe, H.-J. Pfleiderer, R. Schreiber
Journal:
Solid-State Electronics
Year:
1978
Language:
english
File:
PDF, 218 KB
english, 1978