Volume 22; Issue 9

Solid-State Electronics

Volume 22; Issue 9
1

A new technique for the determination of the charge centroid in MNOS structures

I. Krafcsik, D. Marton
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 237 KB
english, 1979
2

An analytical model for the edge-illuminated silicon solar cell under concentrated sunlight

B.L. Grung
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 523 KB
english, 1979
3

Effects of the operational modes on the temperature dependence of the Gunn diode admittance

Toshihiko Makino
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 812 KB
english, 1979
4

A new integrated voltage-controlled negative resistance device-Lambda MOSFET

Ching-Yuan Wu, Khun-Nan Lai
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 183 KB
english, 1979
5

Absorption coefficient of silicon for solar cell calculations

K. Rajkanan, R. Singh, J. Shewchun
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 323 KB
english, 1979
6

Spatial resolution of SEM-EBIC images

C. Donolato
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 307 KB
english, 1979
7

Characterisation of linearly graded p-n junction

S.C. Rustagi, S.K. Chattopadhyaya
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 492 KB
english, 1979
8

The PN-junction transition region

H. Guckel, D.C. Thomas, A. Demirkol
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
9

A difficulty in the theory of p+-n junction diode noise

A. van der Ziel
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 118 KB
english, 1979
11

A proposal for a new approach to heterojunction theory

M.J. Adams, Allen Nussbaum
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 822 KB
english, 1979
12

Titanium in silicon as a deep level impurity

J.-W. Chen, A.G. Milnes, A. Rohatgi
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 642 KB
english, 1979
13

SiSiO2 interface state spectroscopy using MOS tunneling structures

H.C. Card
Journal:
Solid-State Electronics
Year:
1979
Language:
english
File:
PDF, 892 KB
english, 1979