Volume 23; Issue 9

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Solid-State Electronics
Volume 23; Issue 9

Solid-State Electronics

Volume 23; Issue 9

1

The electrical characteristics of cermet-silicon contacts

G.C. Lim, K.D. Leaver

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 533 KB

english, 1980

2

The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide

J.P. Donnelly, C.E. Hurwitz

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 420 KB

english, 1980

3

Degradation of solar cell performance by areal inhomogeneity

F.A. Lindholm, J.A. Mazer, J.R. Davis, J.I. Arreola

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 368 KB

english, 1980

4

Pd/Ge contacts to n-type GaAs

H.R. Grinolds, G.Y. Robinson

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 994 KB

english, 1980

5

The diffusion potential of p−-n− junctions

A. van der Ziel

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 66 KB

english, 1980

6

Improved SERMOSFET process

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 186 KB

english, 1980

7

Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities

M. Sridharan, S.K. Roy

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 249 KB

english, 1980

8

Transferred-electron oscillation in n-In0.53Ga0.47As

Yoshikazu Takeda, Naoto Shikagawa, Ako Sasaki

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 149 KB

english, 1980

9

Orientation dependence of breakdown voltage in GaAs

M.H. Lee, S.M. Sze

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 124 KB

english, 1980

10

Announcement

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 53 KB

english, 1980

11

Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components

J. Zimmermann, E. Constant

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 882 KB

english, 1980

12

Electron transport properties in GaAs at high electric fields

J. Požela, A. Reklaitis

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 506 KB

english, 1980

13

Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact

S.B. Roy, A.N. Daw

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 279 KB

english, 1980

14

A study of diffused bipolar transistors by electron microscopy

C.J. Bull, P. Ashburn, J.P. Gowers

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 2.25 MB

english, 1980

15

A single-frequency approximation for interface-state density determination

W.A. Hill, C.C. Coleman

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 466 KB

english, 1980

16

A simple technique for monitoring undercutting in plasma etching

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 81 KB

english, 1980

17

Comments on “a note on photocurrents in extrinsic semiconductors”

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 141 KB

english, 1980

18

The annealing of thin oxides prior to silicon nitride deposition

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 203 KB

english, 1980