Volume 24; Issue 4

Solid-State Electronics

Volume 24; Issue 4
1

An investigation of the origin of the main electron trap in GaAs

S. Subramanian, B.M. Arora, S. Guha
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 512 KB
english, 1981
2

The effect of excess gate current on input impedance of a JFET amplifier

Noriaki Kumata, Kunio Hane, Tokio Suzuki
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 246 KB
english, 1981
6

Nonequilibrium properties of MIS-capacitors

Ulrich Kelberlau, Rainer Kassing
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 618 KB
english, 1981
7

The diffusion of silicon in germanium

J. Räisänen, J. Hirvonen, A. Anttila
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 382 KB
english, 1981
8

The use of ion-bombardment for plating metal contacts onto semiconductors

A.A. England, E.H. Rhoderick
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 472 KB
english, 1981
9

Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared

Mordehai Heiblum
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 2.44 MB
english, 1981
10

Base component of gain and delay time in base-implanted bipolar transistors

M.I. Elmasry, D.J. Roulston
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 391 KB
english, 1981
11

Accurate two-dimensional simulation of double-beveled p−n junctions

R. Kumar, D.J. Roulston, S.G. Chamberlain
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 202 KB
english, 1981
12

Enhanced barrier height of AuIn1−xGaxAsyP1−y Schottky diodes

P.K. Bhattacharya, M.D. Yeaman
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 321 KB
english, 1981
15

Emitter space charge layer transit time in bipolar junction transistors

S.C. Rustagi, S.K. Chattopadhyaya
Journal:
Solid-State Electronics
Year:
1981
Language:
english
File:
PDF, 334 KB
english, 1981