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Volume 26; Issue 4
Main
Solid-State Electronics
Volume 26; Issue 4
Solid-State Electronics
Volume 26; Issue 4
1
Effect of high field stresses on interface states of n-MOS capacitors
M. Jourdain
,
G. Salace
,
C. Petit
,
M. Favre
,
J. Despujols
,
V. Le Goascoz
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 453 KB
Your tags:
english, 1983
2
The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of aging
Gregory S. Marlow
,
Mukunda B. Das
,
Luis Tongson
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 578 KB
Your tags:
english, 1983
3
Poly I2L with deposited polysilicon collector
Mohamed H. Elsaid
,
Ali M. Rashed
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 398 KB
Your tags:
english, 1983
4
Numerical modeling of power mosfets
D.H. Navon
,
C.T. Wang
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 232 KB
Your tags:
english, 1983
5
Delay times in Si MOSFETS in the 4.2–400 K temperature range
Avid Kamgar
,
R.L. Johnston
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 281 KB
Your tags:
english, 1983
6
Schottky rectifiers on silicon using high barriers
L. Stolt
,
K. Bohlin
,
P.A. Tove
,
H. Norde
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 195 KB
Your tags:
english, 1983
7
Radiation effects on thin-oxide MOS capacitors caused by electron beam evaporation of aluminum
M. Hamasaki
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 410 KB
Your tags:
english, 1983
8
The ƒT Characteristics of epitaxial NPN Transistors in upward operation
K.W. Kwan
,
A. Brunnschweiler
,
D.J. Roulston
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 506 KB
Your tags:
english, 1983
9
Capless annealing of silicon implanted gallium arsenide
J.D. Grange
,
D.K. Wickenden
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 402 KB
Your tags:
english, 1983
10
SiSiO2 interface states based on optically activated conductance technique
R.J. Singh
,
R.S. Srivastava
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 404 KB
Your tags:
english, 1983
11
Properties of the contact on ion cleaned n and p type silicon surfaces
E. Vieujot-Testemale
,
J.M. Palau
,
A. Ismail
,
L. Lassabatere
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 637 KB
Your tags:
english, 1983
12
Replacing the depletion approximation
R.M. Warner Jr.
,
R.P. Jindal
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 481 KB
Your tags:
english, 1983
13
The complete doping profile using MOS CV technique
Shi-Tron Lin
,
Jim Reuter
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 590 KB
Your tags:
english, 1983
14
Analysis of a non-uniformly doped MPN silicon Schottky barrier solar cell
S.B. Roy
,
T.K. Sinha
,
A.N. Daw
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 495 KB
Your tags:
english, 1983
15
Above-ambient temperature control using a thermoelectric heat pump
H.J. Goldsmid
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 140 KB
Your tags:
english, 1983
16
Erratum
Journal:
Solid-State Electronics
Year:
1983
File:
PDF, 14 KB
Your tags:
1983
17
A small geometry MOSFET model for CAD applications
P.P. Guebels
,
F. van de Wiele
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 545 KB
Your tags:
english, 1983
18
Two-dimensional numerical simulation of bipolar semiconductor devices taking into account heavy doping effects and Fermi statistics
B.S. Polsky
,
J.S. Rimshans
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 326 KB
Your tags:
english, 1983
19
Noise in two-port devices with a negative input or output conductance
A. Van der ziel
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 137 KB
Your tags:
english, 1983
20
On threshold and flat-band voltages for MOS devices with polysilicon gate and nonuniformly doped substrate
Alan H. Marshak
,
Ritu Shrivastava
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 243 KB
Your tags:
english, 1983
21
Anomalous behaviour in pulsed MOS capacitors and gated diodes due to localised defects
K.S. Rabbani
,
D.R. Lamb
Journal:
Solid-State Electronics
Year:
1983
Language:
english
File:
PDF, 134 KB
Your tags:
english, 1983
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