Volume 27; Issue 1

Solid-State Electronics

Volume 27; Issue 1
1

Editorial Board

Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 128 KB
english, 1984
2

Current multiplication in MIS structures

Chein Wei Jen, Chung Len Lee, Tan Fu Lei
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 825 KB
english, 1984
3

Current transport mechanisms of electrochemically deposited CdS/CdTe heterojunction

S.S. Ou, O.M. Stafsudd, B.M. Basol
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 409 KB
english, 1984
4

Autocorrelation measurements of CdSxSe1-x thin film noise

V. Filiač, Z. Hájek, Ch. Kleint
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 432 KB
english, 1984
6

Tunneling of holes from acceptor levels in an applied field

Hui-Quan Nie, D.D. Coon
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 489 KB
english, 1984
9

The electrical properties of zinc implanted GaAs

S.S. Kular, B.J. Sealy, Y. Ono, K.G. Stephens
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 564 KB
english, 1984
11

The theory of the long-channel MOSFET

Allen Nussbaum, Ravi Sinha, Dimitri Dokos
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 730 KB
english, 1984
12

Orientation dependence of avalanche breakdown voltage in GaAs with nonuniform doping profiles

K. Shenai
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 167 KB
english, 1984
15

Influence of anneal temperature on the mobile ion concentration in MOS structures

G. Greeuw, S. Bakker, J.F. Verwey
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 447 KB
english, 1984