Volume 28; Issue 1-2

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Solid-State Electronics
Volume 28; Issue 1-2

Solid-State Electronics

Volume 28; Issue 1-2

1

Editorial Board

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 77 KB

english, 1985

2

Foreword

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 41 KB

english, 1985

3

Introduction

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 76 KB

english, 1985

4

Very heavily doped semiconductors as a “nearly-free-electron-gas” system

K.-F. Berggren, B.E. Sernelius

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 477 KB

english, 1985

5

Heavily doped silicon studied by luminescence and selective absorption

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 644 KB

english, 1985

6

Electron and phonon self-energies in heavily doped germanium and silicon

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 683 KB

english, 1985

7

Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate silicon

M. Jouanne, M.A. Kanehisa, J.F. Morhange, N.M. Ravindra, M. Balkanski

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 585 KB

english, 1985

8

Measuring and modeling minority carrier transport in heavily doped silicon

J. del Alamo, S. Swirhun, R.M. Swanson

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 845 KB

english, 1985

9

Is there ever a minimum metallic conductivity?

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 265 KB

english, 1985

10

The magnetic field induced metal-insulator transition in indium phosphide and silicon

A.P. Long, M. Pepper

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 693 KB

english, 1985

11

The metal-insulator transition in amorphous Nb:Si

D.J. Bishop, E.G. Spencer, R.C. Dynes

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 463 KB

english, 1985

12

Anisotropic magnetoconductance in metallic doped Ge:Sb

Youiti Ootuka, Shingo Katsumoto, Shun-ichi Kobayashi, Wataru Sasaki

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 671 KB

english, 1985

13

Magnetic tuning of the metal-insulator transition in n-InSb at very low temperatures

R. Mansfield, M. Abdul-Garder, P. Fozooni

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 267 KB

english, 1985

14

Enhanced spin-lattice relaxation near the metal-insulator transition

M.A. Paalanen, A.E. Ruckenstein, G.A. Thomas

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 415 KB

english, 1985

15

Comments on the Coulomb glass

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 245 KB

english, 1985

16

Transport along grain boundaries in germanium bicrystals at low temperatures

G. Landwehr, E. Bangert, S. Uchida

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 963 KB

english, 1985

17

Band-gap narrowing in the space-charge region of heavily doped silicon diodes

Jeremiah R. Lowney

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 464 KB

english, 1985

18

Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimes

Herbert S. Bennett

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 961 KB

english, 1985

19

Bandgap narrowing due to many body effects in heavily doped semiconductors

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 122 KB

english, 1985

20

Recent developments and open questions on the absence of diffusion in random lattices

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 90 KB

english, 1985

21

Impurity hopping transport in moderately doped, lightly-compensated semiconductors

R. Baron, M.H. Young

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 90 KB

english, 1985

22

The fascinating melting of silicon at T = 0

Monique Combescot

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 98 KB

english, 1985

23

Conduction band tail estimated by X1–X3 splitting energy in heavily doped n-GaP

T. Endo, Y. Nakanishi, K. Sawa, Y. Okino, T. Wada

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 98 KB

english, 1985

24

The logarithmic temperature dependence of the resistivity near the Anderson transition in doped semiconductors

Y. Ochiai, R. Yoshizaki, E. Matsuura

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 110 KB

english, 1985

25

Ellipsometric study of the etch-stop mechanism in heavily doped silicon

E.D. Palik, V.M. Bermudez, O.J. Glembocki

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 82 KB

english, 1985

26

Optical and elastic properties of ultraheavily doped silicon

A.K. Sood, M. Cardona

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 57 KB

english, 1985

27

Nuclear resonance in Ge:As under 〈111〉 stress

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 69 KB

english, 1985

28

Is expanded fluid mercury an excitonic insulator?

Leonid A. Turkevich, Morrel H. Cohen

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 88 KB

english, 1985

29

Transport in heavily doped devices

Carolyn M. Van Vliet, Alan H. Marshak

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 158 KB

english, 1985

30

Electronic structure of ultraheavily doped silicon

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 63 KB

english, 1985

31

Band tails in semiconductors

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 813 KB

english, 1985

32

Energy-gap reduction in heavily doped silicon: Causes and consequences

Sokrates T. Pantelides, Annabella Selloni, Roberto Car

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 825 KB

english, 1985

33

Metal-insulator transition in the amorphous Si1−xAux system with a strong spin-orbit interaction

Nobuhiko Nishida, Takao Furubayashi, Masaaki Yamaguchi, Kazuo Morigaki, Hidehiko Ishimoto

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 587 KB

english, 1985

34

The mobility and dynamical conductivity of Na-doped Si-(100) MOS systems

A. Gold, W. Götze

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 485 KB

english, 1985

35

The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition

W.N. Shafarman, T.G. Castner, J.S. Brooks, K.P. Martin, M.J. Naughton

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 717 KB

english, 1985

36

Effects of the Anderson localization on magnetoconductivity in metallic n-InSb and n-GaAs

S. Morita, N. Mikoshiba, Y. Koike, T. Fukase, S. Ishida, M. Kitagawa

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 658 KB

english, 1985

37

The metal-insulator transition in magnetic semiconductors: Transport in Gd−xvxS4

S. von Molnár, J. Flouquet, F. Holtzberg, G. Remenyi

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 340 KB

english, 1985

38

Renormalization group theory of the Anderson transition and its application to doped semiconductors

Arisato Kawabata

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 384 KB

english, 1985

39

Lifetime broadening of a parabolic band edge of a pure semiconductor at various temperatures

P.T. Landsberg, D.J. Robbins

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 425 KB

english, 1985

40

Disorder, fluctuations and electron interactions in doped semiconductors: A multiple-scattering approach

A. Ghazali, J. Serre

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 554 KB

english, 1985

41

Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors

Maurice Glicksman, W.D. Kraeft

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 865 KB

english, 1985

42

Interaction effects in the weakly localized regime and the anomalous conductivity of Sb-doped Ge at low temperature

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 616 KB

english, 1985

43

Coulomb gap in disordered insulators

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 144 KB

english, 1985

44

Anomalous temperature dependence of 29Si NMR in heavily phosphorus doped silicon

S. Ikehata, K. Ikegami, S. Kobayashi

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 110 KB

english, 1985

45

Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperatures

Frank Stern, Sankar Das Sarma

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 115 KB

english, 1985

46

The effect of electron-hole scattering on minority carrier transport in bipolar transistors

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 371 KB

english, 1985