Volume 29; Issue 12

Solid-State Electronics

Volume 29; Issue 12
1

High-frequency current oscillations in submicron bipolar structures

N. Bannov, V. Gružinskis, A. Reklaitis, V. Ryzhij
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 475 KB
english, 1986
2

Ionization of impurities in silicon

Wiesław Kuźmicz
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 465 KB
english, 1986
3

An analytical model for the power bipolar-MOS transistor

Di-Son Kuo, Chenming Hu, Steven P. Sapp
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 684 KB
english, 1986
5

Samarium as a Schottky barrier on p-type-silicon

R. Nipoti, J. Garrido, S. Guerri
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 351 KB
english, 1986
7

On mobility-fluctuation origin of 1ƒ noise

B. Pellegrini
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 841 KB
english, 1986
9

Electron drift velocity versus electric field in GaAs

Chian S. Chang, Harold R. Fetterman
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 174 KB
english, 1986
10

Editorial - software survey section

Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 110 KB
english, 1986
11

List of contents and author index Volume 29, 1986

Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 1.03 MB
english, 1986
12

Transport of electrons in monolithic hot electron Si transistors

F. Berz
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 866 KB
english, 1986
13

High-frequency performance of non-conventional-geometry bipolar transistors

François Hébert, David J. Roulston
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 430 KB
english, 1986
14

A model for IC yield analysis and process control

Leon L. Pesotchinsky
Journal:
Solid-State Electronics
Year:
1986
Language:
english
File:
PDF, 1.07 MB
english, 1986