Volume 30; Issue 7

Solid-State Electronics

Volume 30; Issue 7
1

Optical characteristics of a superlattice avalanche photodiode

Year:
1987
Language:
english
File:
PDF, 446 KB
english, 1987
3

Modelling of a depletion-mode MOSFET

Year:
1987
Language:
english
File:
PDF, 397 KB
english, 1987
5

Transition from Schottky barriers to p-n junctions

Year:
1987
Language:
english
File:
PDF, 352 KB
english, 1987
6

A new simple analytical emitter model for bipolar transistors

Year:
1987
Language:
english
File:
PDF, 585 KB
english, 1987
7

A new structure in junction devices

Year:
1987
Language:
english
File:
PDF, 502 KB
english, 1987
8

Interface states under LOCOS bird's beak region

Year:
1987
Language:
english
File:
PDF, 960 KB
english, 1987
10

Theoretical analysis of charge transfer in thin-film charge-coupled devices

Year:
1987
Language:
english
File:
PDF, 540 KB
english, 1987
11

Hubbard's sub-band conduction in Si poly-SiO2 transition layers

Year:
1987
Language:
english
File:
PDF, 515 KB
english, 1987
13

Electrical properties at the Nd-doped SiSiO2 interface

Year:
1987
Language:
english
File:
PDF, 146 KB
english, 1987
14

Conference report

Year:
1987
Language:
english
File:
PDF, 197 KB
english, 1987
15

Emitter efficiency, transit times and current gain of bipolar transistors

Year:
1987
Language:
english
File:
PDF, 739 KB
english, 1987
17

Boundary conditions and current-voltage relations for heavily doped p-n diodes

Year:
1987
Language:
english
File:
PDF, 569 KB
english, 1987
18

An improved AuGeNi ohmic contact to n-type GaAs

Year:
1987
Language:
english
File:
PDF, 778 KB
english, 1987
19

High-frequency response of microwave transistors

Year:
1987
Language:
english
File:
PDF, 146 KB
english, 1987
20

Editorial - software survey section

Year:
1987
Language:
english
File:
PDF, 111 KB
english, 1987