Volume 31; Issue 6

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Solid-State Electronics
Volume 31; Issue 6

Solid-State Electronics

Volume 31; Issue 6

1

Generation-annealing of oxide and interface traps at 150 and 298 K in oxidized silicon stressed by Fowler-Nordheim electron tunneling

Charles Ching-Hsiang Hsu, C.Tang Sah

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 493 KB

english, 1988

2

Threshold voltage models of the narrow-gate effect in micron and submicron MOSFETs

Steve Shao-Shiun Chung, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 1.52 MB

english, 1988

3

High-field, nonlinear electron transport in lightly doped Schottky-barrier diodes

Robert B. Darling

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 1.71 MB

english, 1988

4

A three-piece model of channel length modulation in submicrometer MOSFETs

Chien Nguyen-Duc, Sorin Cristoloveanu, Gérard Ghibaudo

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 700 KB

english, 1988

5

Monte-Carlo methods for determination of transport properties of semiconductors

M. Nedjalkov, P. Vitanov

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 471 KB

english, 1988

6

High temperature lifetesting of silicon metal-thin insulator-semiconductor heterojunction emitter bipolar transistors

W.L. Guo, M.K. Moravvej-Farshi, M.A. Green

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 414 KB

english, 1988

7

Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation

Hisham Haddara, Gérard Ghibaudo

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 540 KB

english, 1988

8

Magnetoresistance effect in AlGaAs/GaAs two-dimensional electron gas structures at room temperature

S.J. Battersby, F.M. Selten, J.J. Harris, C.T. Foxon

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 566 KB

english, 1988

9

Electron energy distribution for calculation of gate leakage current in MOSFETs

N. Goldsman, J. Frey

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 343 KB

english, 1988

10

Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p+-n-n+ GaAs diodes

V.N. Brudnyi, V.I. Gaman, V.M. Diamond

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 675 KB

english, 1988

11

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

L.A. Delimova, Yu.V. Zhilyaev, V.Yu. Kachorovsky, M.E. Levinshtein, V.V. Rossin

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 323 KB

english, 1988

12

1/f noise in (100) n-channel Si-MOSFETs from T = 4.2 K to T = 295 K

E.A. Hendriks, R.J.J. Zijlstra

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 677 KB

english, 1988

13

Effect of absorption on photon emission from reverse-biased silicon p-n junctions

D.K. Gautam, W.S. Khokle, K.B. Garg

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 224 KB

english, 1988

14

Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor

M. Meyyappan, J.P. Kreskovsky, H.L. Grubin

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 645 KB

english, 1988

15

Impurity concentration dependence of the 1/f noise parameter α in silicon

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 338 KB

english, 1988

16

Sulphur diffusion into InP by an open tube process

Krishna K. Parat, Sorab K. Ghandhi

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 393 KB

english, 1988

17

A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures

Seog-Ju Oh, Y.T. Yeow

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 448 KB

english, 1988

18

Editorial - software survey section

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 111 KB

english, 1988

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