Volume 36; Issue 1

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Solid-State Electronics
Volume 36; Issue 1

Solid-State Electronics

Volume 36; Issue 1

1

Editorial Board

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 51 KB

english, 1993

2

Spreading resistance analysis based on the method of regularisation

S.C. Choo, M.S. Leong, Y.T. Lee

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

3

Nickel-gallium arsenide high-voltage power Schottky diodes

G. Ashkinazi, Tz. Hadas, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 464 KB

english, 1993

4

Rigorous theory and simplified model of the band-to-band tunneling in silicon

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1.14 MB

english, 1993

5

The peripheral bipolar junction transistor and its relation to predictability in device modeling

M. Choi, D.E. Burk

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 489 KB

english, 1993

6

Selfheating effects in silicon resistors operated at cryogenic ambient temperatures

Edmundo A. Gutiérrez D., Ludo Deferm, Gilbert Declerck

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 682 KB

english, 1993

7

The impact of electron transport regimes on the linearity of AlGaAs/n+-InGaAs HFETs

David R. Greenberg, Jesús A. Del Alamo

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 699 KB

english, 1993

8

Quasi-Schottky barrier MSM-diode on n-Ga0.47In0.53As using a depleted p+-Ga0.47In0.53As layer grown by LP-MOVPE

S.V. Averin, A. Kohl, R. Müller, J. Wisser, K. Heime

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 504 KB

english, 1993

9

Properties of a new U.V.-sensitive CCD detector array

J. Kothe, W. von Münch

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

10

A new oxidation-resistant CoSi2 process for self-aligned silicidation (salicide) technology

Yung-Song Lou, Ching-Yuan Wu, Huang-Chung Cheng

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 940 KB

english, 1993

11

Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor

K.H. Lou, C.M. Liu, J.B. Kuo

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 372 KB

english, 1993

12

Effect of p-n coupling on reverse recovery transient of a homojunction solar cell

Avinashi Kapoor, R.M. Mehra, P.C. Mathur

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 259 KB

english, 1993

13

Triangular-voltage sweep C-V method for determination of generation lifetime and surface generation velocity

P. Peykov, J. Carrillo, M. Aceves

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 236 KB

english, 1993

14

Simple expression for the effective electron relaxation time in n-GaAs

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 185 KB

english, 1993

15

Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors

I. Hirsch, E. Berman, N. Haik

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 103 KB

english, 1993

16

Analytical base transit time model of uniformly-doped-based bipolar transistors for high-injection regions

Kunihiro Suzuki

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 146 KB

english, 1993

17

Noise redistribution in thin films due to electron scattering at the boundaries

O.M. Bulashenko, O.V. Kochelap, V.A. Kochelap

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 157 KB

english, 1993

18

Comments on “Surface potential transients of ultrathin SiO2Si structures”

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 100 KB

english, 1993

19

Reply to “Comments on ‘Surface potential transients of ultrathin SiO2Si structures’”

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 62 KB

english, 1993

20

Editorial: Software survey section

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 78 KB

english, 1993