Volume 36; Issue 7

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Solid-State Electronics
Volume 36; Issue 7

Solid-State Electronics

Volume 36; Issue 7

1

Numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET

P.C. Yang, Sheng S. Li

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 440 KB

english, 1993

2

Investigation of the kink and hysteresis from 13 K to 30 K in N-channel CMOS transistors with a floating well

Kathy L. Kasley, Gerald M. Oleszek, Richard L. Anderson

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 363 KB

english, 1993

3

Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon

T.P. Chen, T.C. Lee, C.C. Ling, C.D. Beling, S. Fung

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 660 KB

english, 1993

4

Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes

Shubneesh Batra, Kyle Picone, Keun Hyung Park, Suryanarayana Bhattacharya, Sanjay Banerjee, Jack Lee, Monte Manning, Chuck Dennison

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1020 KB

english, 1993

5

Semi-analytical model for charge control in SiGe quantum well MOS structures

Kaushik Bhaumik, Yosef Shacham-Diamand

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 729 KB

english, 1993

6

Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range

Miroslav Barus, Daniel Donoval

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 482 KB

english, 1993

7

Injection current in a planar doped base Si bipolar junction transistor

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 451 KB

english, 1993

8

Photoelectrical properties of Au/GaAs(1−x)Sx/Mo structures as a function of sulfur concentration

Frédéric Lalande, Hervé Carchano, Békeyi Sogoyou

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 424 KB

english, 1993

9

Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y in calculating minimum capacitance in C-V plot of MIS structure

Sajal K. Paul, P.K. Basu

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

10

Theory of surface photovoltage in a semiconductor with deep impurities

S.C. Choo, L.S. Tan, H.H. See

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1.01 MB

english, 1993

11

Spatially transient hot electron distributions in silicon determined from the chambers path integral solution of the Boltzmann transport equation

C.C.C. Leung, P.A. Childs

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 483 KB

english, 1993

12

Low-frequency noise characteristics of lightly-doped-drain MOSFETs

Sheng-Lyang Jang, Ping-Chen Chang

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 285 KB

english, 1993

13

On the carrier removal phenomenon in silicon after proton irradiation

R. Gopal, S. Ahmad

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 707 KB

english, 1993

14

Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs

R.K. Chanana, R. Dwivedi, S.K. Srivastava

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 678 KB

english, 1993

15

Small-signal non-quasi-static model for single and double heterojunction bipolar transistors

Jeffrey C.-N. Huang, Ibrahim M. Abdel-Motaleb,

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 658 KB

english, 1993

16

A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities

A. Koldehoff, M. Schröter, H.-M. Rein

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1.45 MB

english, 1993

17

Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy

L.B. Chang, L.Z. Shai

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 997 KB

english, 1993

18

Conservation equations for hot carriers—I. Transport models

V. Gružinskis, E. Starikov, P. Shiktorov

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1.14 MB

english, 1993

19

Conservation equations for hot carriers—II. Dynamic features

V. Gružinskis, E. Starikov, P. Shiktorov

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 841 KB

english, 1993

20

Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures

W.R. Buchwald, J.H. Zhao, M. Harmatz, E.H. Poindexter

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 608 KB

english, 1993

21

Experimental application of a novel technique to extract gate bias dependent source and drain parasitic resistances of GaAs MESFETs

Roberto Menozzi, Paolo Cova, Luca Selmi

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 191 KB

english, 1993

22

Software survey section

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 169 KB

english, 1993