Volume 37; Issue 7

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Solid-State Electronics
Volume 37; Issue 7

Solid-State Electronics

Volume 37; Issue 7

1

Publisher's note

Journal:

Solid-State Electronics

Year:

1994

File:

PDF, 14 KB

1994

2

Reassessment of the piezoelectric constant in GaAs by studying the electron transport of high purity MBE-grown GaAs

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 213 KB

english, 1994

3

Base and collector currents of pre- and post-burn-in AlGaAs/GaAs heterojunction bipolar transistors

J.J. Liou, C.I. Huang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 285 KB

english, 1994

4

Au/Pd/Te ohmic contacts on n-type InP

P.A. Leigh, R.M. Cox, P.J. Dobson

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 540 KB

english, 1994

5

Transmission matrix approach for electron transport in inversion layers

M.B. Patil, Y. Okuyama, Y. Ohkura, T. Toyabe, S. Ihara

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 542 KB

english, 1994

6

Approximations for the Fermi-Dirac integrals Fj(x)

Muhammad Taher Abuelma'atti

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 228 KB

english, 1994

7

Characteristics of trapping states and their equivalent circuit for the Al/InPO4 interface

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 383 KB

english, 1994

8

A simple analytical model for gate capacitance-voltage characteristics of HEMTs

Amitava DasGupta, Nandita DasGupta

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 310 KB

english, 1994

9

A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

Ming-Jiang Zhou, A. Van Calster

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 254 KB

english, 1994

10

Simulation of the transient characteristics of partially- and fully-depleted SOI MOSFETs

Gwo-Chung Tai, Can E. Korman, Isaak D. Mayergoyz

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 665 KB

english, 1994

11

An accurate solution for the dark diffusion current of preferentially doped polysilicon solar cells

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 393 KB

english, 1994

12

Modeling the on-state characteristics of the emitter switched thyristor

M.S. Shekar, B.J. Baliga

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 866 KB

english, 1994

13

Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion

Yang-Hua Chang, G.P. Li

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 511 KB

english, 1994

14

Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFETs

Takashi Ohzone, Hideyuki Iwata, Yukiharu Uraoka, Shinji Odanaka

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 771 KB

english, 1994

15

Determination of energy levels of recombination centers in low-doped Si layers by temperature dependence of recombination lifetime

P. Spirito, A. Sanseverino

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 572 KB

english, 1994

16

A simple theoretical analysis of the gate capacitance of metal-oxide-semiconductor field effect devices of non-parabolic materials in the presence of a parallel magnetic field

K.P. Ghatak, S.N. Biswas

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 547 KB

english, 1994

17

MOSFET saturation voltage

Robert Tu, Jian-Hui Huang, Ping Ko, Chenming Hu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 129 KB

english, 1994

18

Comments on “numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET”

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 182 KB

english, 1994

19

Modeling of edge threshold voltage of mesa-isolated n-channel MOSFETs on fully-depleted thin film SOI

Jae-Woo Park, Chul-Hi Han, Choong-Ki Kim

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 236 KB

english, 1994

20

Comments on “a model of 1/f noise in polysilicon resistors”

Min-Yih Luo, Gijs Bosman

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 102 KB

english, 1994

21

Studies on temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP

S.S. De, A.K. Ghosh, A.K. Hajra, J.C. Halder, M. Bera

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 183 KB

english, 1994

22

Comments on letter by K. Somogyi

A. Wolkenberg, T. Przesławski, J. Klamka

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 47 KB

english, 1994

23

Final comment on the letter by A. Wolkenberg et al. [1]

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 27 KB

english, 1994

24

Ultra clean processing of silicon surfaces

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 98 KB

english, 1994