Volume 38; Issue 9

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Solid-State Electronics
Volume 38; Issue 9

Solid-State Electronics

Volume 38; Issue 9

1

SiSiGe CMOS possibilities

A Sadek, K Ismail

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 370 KB

english, 1995

2

Novel heterodimensional diodes and transistors

M.S Shur, W.C Peatman, H Park, W Grimm, M Hurt

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 324 KB

english, 1995

3

Circuit demonstrations in a GaAs BiFET technology

P.J Zampardi, S.M Beccue, J Yu, K Pedrotti, R.L Pierson, W.J Ho, M.F Chang, K.C Wang

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 342 KB

english, 1995

4

A 48.1 ps HEMT DCFL NAND circuit with a dual gate structure

H Suehiro, T Miyata, N Hara, S Kuroda

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 421 KB

english, 1995

5

Open-base multi-emitter HBTs with increased logic functions

K Imamura, M Takatsu, T Mori, S Muto, N Yokoyama

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 402 KB

english, 1995

6

InPInGaAs double-heterostructure bipolar transistors for high-speed ICs and OEICs

Yutaka Matsuoka, Eiichi Sano

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 644 KB

english, 1995

7

Surface electrical breakdown characteristics of molecular beam epitaxial layers grown at low temperatures

S Shiobara, K Sasaki, H Hasegawa

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 441 KB

english, 1995

8

Development of HBT structure to minimize parasitic elements

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 525 KB

english, 1995

9

Material and device properties of MOCVD grown InAlAsInGaAs HEMTs

D Pavlidis, K Hong, K Hein, Y Kwon

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 531 KB

english, 1995

10

A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor

S Suzuki, S Kodama, H Hasegawa

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 388 KB

english, 1995

11

InGaPGaAs and InPInGaAs heterojunction bipolar transistors with a super heavily carbon-doped base grown by metalorganic molecular beam epitaxy

Jun-Ichi Shirakashi, Makoto Konagai

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 425 KB

english, 1995

12

Modern epitaxial techniques for HBT structures

F Alexandre, J.L Benchimol, P Launay, J Dangla, C Dubon-Chevallier

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 893 KB

english, 1995

13

Performance of double heterostructure unipolar transistors in high frequency power applications

S.G Ingram, E.H Linfield, K.M Brown, G.A.C Jones, D.A Richie, M.J Kelly

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 311 KB

english, 1995

14

Thermal stabilization of AlGaAsGaAs power HBTs using n-AlxGa1−xAs emitter ballast resistors with high thermal coefficient of resistance

J.K Twynam, M Yagura, K Kishimoto, T Kinosada, H Sato, M Shimizu

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 415 KB

english, 1995

15

Thermal-avalanche interacting behaviour of AlGaAsGaAs multi-emitter finger heterojunction bipolar transistors

J.J Liou, A Ortiz-Conde, L.L Liou, C.I Huang

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 355 KB

english, 1995

16

Study on d.c. bias mode for common emitter HBT

M Komaru, J Udomoto, A Inoue, T Shimura, M Sakai, T Kuragaki, T Tanino

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 212 KB

english, 1995

17

Optimization of the HBT and bump configuration for bump heat sink structure and application to HBT power MMICs

H Sato, M Hasegawa, M Miyauchi, J.K Twynam, K Sakuno, M Akagi, K Yamamura, T Miyajima

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 367 KB

english, 1995

18

High gain, pulsed power AlGaAsGaAs HBTs

G Jackson, W Struble, M Adlerstein, S Shanfield, M Cobb, M Zaitlin, E Tong, R Pucel, P Saledas

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 417 KB

english, 1995

19

Novel fabrication of self-aligned GaAsAlGaAs and GaAsInGaP microwave power heterojunction bipolar transistors

F Ren, C.R Abernathy, S.J Pearton, L.W Yang, S.T Fu

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 511 KB

english, 1995

20

Fabrication of 0.2 μm gate pseudomorphic inverted HEMT by phase-shifting technology

H.T Yamada, R Shigemasa, H.I Fujishiro, S Nishi, T Saito

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

21

Surface related degradation of InP-based HEMTs during thermal stress

Y Ashizawa, C Nozaki, T Noda, A Sasaki, S Fujita

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 443 KB

english, 1995

22

Failure mechanisms in AlGaAsGaAs HEMTs

K.A Christianson, C Moglestue, W.T Anderson

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

23

AlGaAsGaAs HBTs with buried SiO2 in the extrinsic collector

K Mochizuki, T Nakamura, T Tanoue, H Masuda

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 281 KB

english, 1995

24

Photoelectric emission and conductance studies on fully fabricated PHEMTs

Fritz Schuermeyer, Charles Cerny, J.P Loehr, R.E Sherriff

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 360 KB

english, 1995

25

Improvements of drain current characteristics of InAs field-effect transistors by the surface reaction of platinum gate

Kanji Yoh, Hayato Takeuchi, Hideki Hasegawa, Satoshi Izumiya, Masataka Inoue

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

26

Junction heterostructures for high performance electronics

J.B Shealy, W.-N Jiang, P.A Parikh, G Verzellis, U.K Mishra

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 405 KB

english, 1995

27

Multivalued logic applications of heterostructure devices and circuitry

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 397 KB

english, 1995

28

SiGe HBTs and HFETs

U König, H Dämbkes

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 894 KB

english, 1995

29

Millimeter wave heterojunction FET monolithic integrated circuits for compact communication systems

Keiichi Ohata, Masahiro Funabashi, Takashi Inoue, Ken'ichi Hosoya, Kazuhiko Onda, Masaaki Kuzuhara

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 542 KB

english, 1995

30

Overview of recent development of HEMTs in the mm-wave range

Saburo Takamiya, Naohito Yoshida, Norio Hayafuji, Takuji Sonoda, Shigeru Mitsui

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 905 KB

english, 1995

31

Millimeter wave InP HEMT technology: Performance and applications

Loi D Nguyen, Minh V Le, Takyiu Liu, Mark Lui, Karen Kaneko, Eric Holzman, Michael J Delaney

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 449 KB

english, 1995

32

Applications of HBTs

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 414 KB

english, 1995

33

Military applications for heterostructure microelectronics technology

Paul Greiling, Conilee Kirkpatrick, Gary Valentine

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 821 KB

english, 1995

34

Microwave components for cellular portable radiotelephone

Masahiro Muraguchi, Masayoshi Aikawa

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 635 KB

english, 1995

35

Preface

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 74 KB

english, 1995

36

Committees

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 46 KB

english, 1995

37

Keyword index

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 42 KB

english, 1995

38

Author index

Journal:

Solid-State Electronics

Year:

1995

File:

PDF, 57 KB

1995

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