Volume 39; Issue 10

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Solid-State Electronics
Volume 39; Issue 10

Solid-State Electronics

Volume 39; Issue 10

1

An improved velocity overshoot model for submicron-gate MESFETs

F. Schwierz, M. Roßerg, D. Nuernbergk, D. Schipanski, H. Förster, J.J. Liou

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 160 KB

english, 1996

2

“Excess” polarization of the spontaneous emission in laser heterostructures

A.A. Ptashchenko, F.A. Ptashchenko

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 465 KB

english, 1996

3

Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 120 KB

english, 1996

4

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

J.B. Casady, R.W. Johnson

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 1.40 MB

english, 1996

5

Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters

Gwo-Chung Tai, Can E. Korman, Isaak D. Mayergoyz

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

6

New approach to bias scan DLTS for rapid evaluation of interface states in MOS structures

Serhat Özder, ⌟smail Atilgan, Bayram Katircioḡlu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 590 KB

english, 1996

7

Noise in mixed tunneling avalanche transit time (MITATT) diodes

G.N. Dash, J.K. Mishra, A.K. Panda

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 486 KB

english, 1996

8

The charge controlled analog synapse

Aharon J. Agranat, Offer Schwartsglass, Joseph Shappir

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

9

Heat generation in Si bipolar power devices: The relative importance of various contributions

O. Tornblad, U. Lindefelt, B. Breitholtz

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 680 KB

english, 1996

10

Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Takashi Ohzone, Takashi Hori

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 495 KB

english, 1996

11

Capacitance technique for the determination of interface state density of metal-semiconductor contact

P. Chattopadhyay

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 195 KB

english, 1996

12

MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen, H. Clement Wann, Jon Dunster, Ping K. Ko, Chenming Hu, Makoto Yoshida

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

13

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

M. Nathan, Z. Shoshani, G. Ashkinazi, B. Meyler, O. Zolotarevski

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 491 KB

english, 1996

14

An analytical model of GaAs OPFET

P. Chakrabarti, A. Gupta, N.A. Khan

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 510 KB

english, 1996

15

Analysis of circuit degradation due to hot-carrier effects in 64Mb DRAMs

Yoonjong Huh, Dooyoung Yang, Yungkwon Sung

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 455 KB

english, 1996

16

Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions

V. Gergel, I. Lapushkin, A. Zakharova

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

17

On the analysis of C-V curves for high resistivity substrates

M. Estrada del Cueto, A.C. Altuzarra

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 204 KB

english, 1996

18

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

J.C. Yen, Q. Zhang, M.J. Mondry, P.M. Chavarkar, E.L. Hu, S.I. Long, U.K. Mishra

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

19

Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies

P. Rouquette, D. Gasquet, F. Barberousse, W. De Raedt, Y. Baeyens

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

20

Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films

A.V. Kamanin, I.A. Mokina, N.M. Shmidt

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 312 KB

english, 1996