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Volume 39; Issue 10
Main
Solid-State Electronics
Volume 39; Issue 10
Solid-State Electronics
Volume 39; Issue 10
1
An improved velocity overshoot model for submicron-gate MESFETs
F. Schwierz
,
M. Roßerg
,
D. Nuernbergk
,
D. Schipanski
,
H. Förster
,
J.J. Liou
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 160 KB
Your tags:
english, 1996
2
“Excess” polarization of the spontaneous emission in laser heterostructures
A.A. Ptashchenko
,
F.A. Ptashchenko
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 465 KB
Your tags:
english, 1996
3
Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors
J.A. De Lima
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 120 KB
Your tags:
english, 1996
4
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady
,
R.W. Johnson
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 1.40 MB
Your tags:
english, 1996
5
Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters
Gwo-Chung Tai
,
Can E. Korman
,
Isaak D. Mayergoyz
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 259 KB
Your tags:
english, 1996
6
New approach to bias scan DLTS for rapid evaluation of interface states in MOS structures
Serhat Özder
,
⌟smail Atilgan
,
Bayram Katircioḡlu
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 590 KB
Your tags:
english, 1996
7
Noise in mixed tunneling avalanche transit time (MITATT) diodes
G.N. Dash
,
J.K. Mishra
,
A.K. Panda
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 486 KB
Your tags:
english, 1996
8
The charge controlled analog synapse
Aharon J. Agranat
,
Offer Schwartsglass
,
Joseph Shappir
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 372 KB
Your tags:
english, 1996
9
Heat generation in Si bipolar power devices: The relative importance of various contributions
O. Tornblad
,
U. Lindefelt
,
B. Breitholtz
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 680 KB
Your tags:
english, 1996
10
Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2
Toshihiro Matsuda
,
Takashi Ohzone
,
Takashi Hori
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 495 KB
Your tags:
english, 1996
11
Capacitance technique for the determination of interface state density of metal-semiconductor contact
P. Chattopadhyay
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 195 KB
Your tags:
english, 1996
12
MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
Kai Chen
,
H. Clement Wann
,
Jon Dunster
,
Ping K. Ko
,
Chenming Hu
,
Makoto Yoshida
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 243 KB
Your tags:
english, 1996
13
On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes
M. Nathan
,
Z. Shoshani
,
G. Ashkinazi
,
B. Meyler
,
O. Zolotarevski
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 491 KB
Your tags:
english, 1996
14
An analytical model of GaAs OPFET
P. Chakrabarti
,
A. Gupta
,
N.A. Khan
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 510 KB
Your tags:
english, 1996
15
Analysis of circuit degradation due to hot-carrier effects in 64Mb DRAMs
Yoonjong Huh
,
Dooyoung Yang
,
Yungkwon Sung
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 455 KB
Your tags:
english, 1996
16
Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
V. Gergel
,
I. Lapushkin
,
A. Zakharova
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 305 KB
Your tags:
english, 1996
17
On the analysis of C-V curves for high resistivity substrates
M. Estrada del Cueto
,
A.C. Altuzarra
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 204 KB
Your tags:
english, 1996
18
Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits
J.C. Yen
,
Q. Zhang
,
M.J. Mondry
,
P.M. Chavarkar
,
E.L. Hu
,
S.I. Long
,
U.K. Mishra
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 537 KB
Your tags:
english, 1996
19
Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
P. Rouquette
,
D. Gasquet
,
F. Barberousse
,
W. De Raedt
,
Y. Baeyens
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 247 KB
Your tags:
english, 1996
20
Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films
A.V. Kamanin
,
I.A. Mokina
,
N.M. Shmidt
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 312 KB
Your tags:
english, 1996
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