Volume 39; Issue 11

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Solid-State Electronics
Volume 39; Issue 11

Solid-State Electronics

Volume 39; Issue 11

1

Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures

B. Gentinne, D. Flandre, J.-P. Colinge, F. Van De Wiele

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 762 KB

english, 1996

2

Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs

C. Surya, W. Wang, W.K. Fong, C.H. Chan, P.T. Lai

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 349 KB

english, 1996

3

Low frequency noise characteristics of AlInAsInGaAs heterojunction bipolar transistors

Sheng-Lyang Jang, Way-Ming Chen, Hao-Hsiung Lin, Chao-Hsing Huang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 783 KB

english, 1996

4

Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides

N. Lundberg, M. Östling

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 665 KB

english, 1996

5

New hot carrier failure criterion for p-channel transistors based on transistor leakage currents

B.S. Doyle, K.R. Mistry

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 216 KB

english, 1996

6

Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters

Gwo-Chung Tai, Can E. Korman, Isaak D. Mayergoyz

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 427 KB

english, 1996

7

Resonant tunneling characteristics of a delta-doped strained-layer quantum-well switching device (δ-SQSD)

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 433 KB

english, 1996

8

Selective and non-selective wet chemical etching of GaAs0.93P0.07

J. Hong, S.J. Pearton, W.S. Hobson, H. Han

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

9

Analytical model of collector current density and base transit time based on iteration method

P. Ma, L. Zhang, Y. Wang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 285 KB

english, 1996

10

Silicon photodiode-waveguide coupling—Two-dimensional modelling, software simulation and experiments

M. Caldararu, F. Craciunoiu, A. Paraschiv, D. Cristea, F. Caldararu, D. Dascalu, C. Klier, G. Mirea, A. Vasile, M. Nicolae

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 811 KB

english, 1996

11

Silicon carbide MOSFET technology

D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Hennessy, G. Michon

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 1.19 MB

english, 1996

12

An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs

Maneesha, M.K. Khanna, S. Hadlar, R.S. Gupta

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

13

Analytical investigation of electrical performance of metal-insulator-III–V semiconductor field-effect transistors

F. Stengel, S. Noor Mohammad, H. Morkoc

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 914 KB

english, 1996

14

Observation of photon emissions from hot electrons and latch-up at the cleaved surface of CMOS structures

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

15

Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Danneville, A. Cappy

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 851 KB

english, 1996

16

A self-consistent model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors

R. Lacomb, F. Jain

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 609 KB

english, 1996

17

MBE-grown SiGe base HBT with polysilicon-emitter and TiSi2 base ohmic layer

B.R. Ryum, T.-H. Han

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 520 KB

english, 1996

18

Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data

A. Rogalski, R. Ciupa, W. Larkowski

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 827 KB

english, 1996

19

Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices

A.W. Smith, K.F. Brennan

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 904 KB

english, 1996

20

A model for specific contact resistance applicable for titanium silicide-silicon contacts

K. Varahramyan, E.J. Verret

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 572 KB

english, 1996

21

New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress

P.T. Lai, Xu Jingping, X. Zeng, Y.C. Cheng

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 394 KB

english, 1996

22

Closed-form analytical expressions for the breakdown voltage of GaAs parallel-plane p+n junction in 〈100〉, 〈110〉 and 〈111〉 orientations

Yong-Sung Chung, Seung-Youp Han, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 177 KB

english, 1996

23

A technique for compensating for temperature variation in low-supply-voltage GaAs DCFL circuits

Tadashi Maeda, Keiichi Numata, Yasuo Ohno, Hikaru Hida, Masatoshi Tokushima, Muneo Fukaishi, Masaoki Ishikawa, Masahiro Fujii

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 475 KB

english, 1996

24

Applications of ZnO-based glass membranes to mos devices

Keiji Kobayashi, Hideyuki Sasaki

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 310 KB

english, 1996

25

Erratum

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 91 KB

english, 1996