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Volume 39; Issue 11
Main
Solid-State Electronics
Volume 39; Issue 11
Solid-State Electronics
Volume 39; Issue 11
1
Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures
B. Gentinne
,
D. Flandre
,
J.-P. Colinge
,
F. Van De Wiele
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 762 KB
Your tags:
english, 1996
2
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
C. Surya
,
W. Wang
,
W.K. Fong
,
C.H. Chan
,
P.T. Lai
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 349 KB
Your tags:
english, 1996
3
Low frequency noise characteristics of AlInAsInGaAs heterojunction bipolar transistors
Sheng-Lyang Jang
,
Way-Ming Chen
,
Hao-Hsiung Lin
,
Chao-Hsing Huang
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 783 KB
Your tags:
english, 1996
4
Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
N. Lundberg
,
M. Östling
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 665 KB
Your tags:
english, 1996
5
New hot carrier failure criterion for p-channel transistors based on transistor leakage currents
B.S. Doyle
,
K.R. Mistry
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 216 KB
Your tags:
english, 1996
6
Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters
Gwo-Chung Tai
,
Can E. Korman
,
Isaak D. Mayergoyz
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 427 KB
Your tags:
english, 1996
7
Resonant tunneling characteristics of a delta-doped strained-layer quantum-well switching device (δ-SQSD)
Der-Feng Guo
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 433 KB
Your tags:
english, 1996
8
Selective and non-selective wet chemical etching of GaAs0.93P0.07
J. Hong
,
S.J. Pearton
,
W.S. Hobson
,
H. Han
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 247 KB
Your tags:
english, 1996
9
Analytical model of collector current density and base transit time based on iteration method
P. Ma
,
L. Zhang
,
Y. Wang
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 285 KB
Your tags:
english, 1996
10
Silicon photodiode-waveguide coupling—Two-dimensional modelling, software simulation and experiments
M. Caldararu
,
F. Craciunoiu
,
A. Paraschiv
,
D. Cristea
,
F. Caldararu
,
D. Dascalu
,
C. Klier
,
G. Mirea
,
A. Vasile
,
M. Nicolae
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 811 KB
Your tags:
english, 1996
11
Silicon carbide MOSFET technology
D.M. Brown
,
E. Downey
,
M. Ghezzo
,
J. Kretchmer
,
V. Krishnamurthy
,
W. Hennessy
,
G. Michon
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 1.19 MB
Your tags:
english, 1996
12
An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs
Maneesha
,
M.K. Khanna
,
S. Hadlar
,
R.S. Gupta
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 381 KB
Your tags:
english, 1996
13
Analytical investigation of electrical performance of metal-insulator-III–V semiconductor field-effect transistors
F. Stengel
,
S. Noor Mohammad
,
H. Morkoc
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 914 KB
Your tags:
english, 1996
14
Observation of photon emissions from hot electrons and latch-up at the cleaved surface of CMOS structures
T. Aoki
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 406 KB
Your tags:
english, 1996
15
Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures
J. Mateos
,
T. González
,
D. Pardo
,
P. Tadyszak
,
F. Danneville
,
A. Cappy
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 851 KB
Your tags:
english, 1996
16
A self-consistent model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors
R. Lacomb
,
F. Jain
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 609 KB
Your tags:
english, 1996
17
MBE-grown SiGe base HBT with polysilicon-emitter and TiSi2 base ohmic layer
B.R. Ryum
,
T.-H. Han
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 520 KB
Your tags:
english, 1996
18
Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data
A. Rogalski
,
R. Ciupa
,
W. Larkowski
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 827 KB
Your tags:
english, 1996
19
Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices
A.W. Smith
,
K.F. Brennan
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 904 KB
Your tags:
english, 1996
20
A model for specific contact resistance applicable for titanium silicide-silicon contacts
K. Varahramyan
,
E.J. Verret
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 572 KB
Your tags:
english, 1996
21
New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress
P.T. Lai
,
Xu Jingping
,
X. Zeng
,
Y.C. Cheng
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 394 KB
Your tags:
english, 1996
22
Closed-form analytical expressions for the breakdown voltage of GaAs parallel-plane p+n junction in 〈100〉, 〈110〉 and 〈111〉 orientations
Yong-Sung Chung
,
Seung-Youp Han
,
Yearn-Ik Choi
,
Sang-Koo Chung
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 177 KB
Your tags:
english, 1996
23
A technique for compensating for temperature variation in low-supply-voltage GaAs DCFL circuits
Tadashi Maeda
,
Keiichi Numata
,
Yasuo Ohno
,
Hikaru Hida
,
Masatoshi Tokushima
,
Muneo Fukaishi
,
Masaoki Ishikawa
,
Masahiro Fujii
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 475 KB
Your tags:
english, 1996
24
Applications of ZnO-based glass membranes to mos devices
Keiji Kobayashi
,
Hideyuki Sasaki
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 310 KB
Your tags:
english, 1996
25
Erratum
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 91 KB
Your tags:
english, 1996
1
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