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Volume 39; Issue 5
Main
Solid-State Electronics
Volume 39; Issue 5
Solid-State Electronics
Volume 39; Issue 5
1
Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode
A.M.P.J Hendriks
,
W Magnus
,
T.G van de Roer
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 981 KB
Your tags:
english, 1996
2
The Child-Langmuir law as a model for electron transport in semiconductors
Naoufel Ben Abdallah
,
Pierre Degond
,
Ahmed Yamnahakki
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 755 KB
Your tags:
english, 1996
3
A novel two-step etching process for reducing plasma-induced oxide damage
Kuo-Feng You
,
Ching-Yuan Wu
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 427 KB
Your tags:
english, 1996
4
High barrier metallic polymer/p-type silicon Schottky diodes
Y Onganer
,
M Saǧlam
,
A Türüt
,
H Efeoǧlu
,
S Tüzemen
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 445 KB
Your tags:
english, 1996
5
Non-equilibrium carrier transport in the base of heterojunction bipolar transistors
Melih Özaydin
,
Lester F Eastman
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 527 KB
Your tags:
english, 1996
6
A 3D analytical model for threshold voltage of small-geometry MOSFET
Arti Noor
,
Chandra Shekhar
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 585 KB
Your tags:
english, 1996
7
The conduction properties of the silicon/off-stoichiometry-SiO2 diode
M Aceves
,
C Falcony
,
A Reynoso-Hernandez
,
W Calleja
,
A Torres
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 756 KB
Your tags:
english, 1996
8
Space charge analysis of Si n+-i structures with application to far-infrared detectors
H.X Yuan
,
A.G.U Perera
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 895 KB
Your tags:
english, 1996
9
Electron cyclotron resonance plasma etching of InP and related materials in BCl3
F Ren
,
W.S Hobson
,
J.M Kuo
,
J.R Lothian
,
J Lopata
,
S.J Pearton
,
J.A Caballero
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 356 KB
Your tags:
english, 1996
10
Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation
Yuhua Cheng
,
Tor A Fjeldly
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 886 KB
Your tags:
english, 1996
11
Finite element Monte Carlo simulation of recess gate compound FFTs
S Babiker
,
A Asenov
,
J.R Barker
,
S.P Beaumont
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 696 KB
Your tags:
english, 1996
12
Modeling of anomalous current-voltage characteristics in floating body fully depleted SOI nMOSFETs
Ping-Chang Yang
,
Patrick S Liu
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 585 KB
Your tags:
english, 1996
13
Correlation of the decay of tunneling currents with trap generation inside thin oxides
N.A Dumin
,
K.J Dickerson
,
D.J Dumin
,
B.T Moore
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 700 KB
Your tags:
english, 1996
14
Temperature effects on MOSFET driving capability and voltage gain
K Chen
,
J.H Huang
,
J.Z Ma
,
Z.H Liu
,
M.C Jeng
,
P.K Ko
,
C Hu
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 233 KB
Your tags:
english, 1996
15
Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design
S Krishnan
,
J.G Fossum
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 711 KB
Your tags:
english, 1996
16
Study of Fowler-Nordheim tunneling current from polysilicon asperity surface into oxide based on accurate formulation utilizing the charge simulation method
Sumio Tanaka
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 670 KB
Your tags:
english, 1996
17
Comments on “Ehrenfest derivation of the mean forces acting in materials with nonuniform band structure: A canonical approach”
Y.L Le Coz
,
H.F Tiersten
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 140 KB
Your tags:
english, 1996
18
New complementary BiCMOS digital gates for low-voltage environments
S.S Rofail
,
Kiat Seng Yeo
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 497 KB
Your tags:
english, 1996
19
Passivation of carbon doping in InGaAs during ECR-CVD of SiNx
F Ren
,
R.A Hamm
,
J.R Lothian
,
R.G Wilson
,
S.J Pearton
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 222 KB
Your tags:
english, 1996
20
Determination of LDD MOSFET drain resistance from device simulation
G.S Samudra
,
B.P Seah
,
C.H Ling
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 549 KB
Your tags:
english, 1996
21
Effect of Ge incorporation on the performance of p-channel polycrystalline Si1−xGex thin-film transistors
H.C Lin
,
H.Y Lin
,
C.Y Chang
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 655 KB
Your tags:
english, 1996
22
A finite number of sub-bands?
Peter J Price
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 124 KB
Your tags:
english, 1996
23
Computer aided optimization of ion implantation impurity profiles for n+npp+ double drift IMPATT diodes with three moment approach
A.K Panda
,
G.N Dash
,
S.P Pati
Journal:
Solid-State Electronics
Year:
1996
Language:
english
File:
PDF, 406 KB
Your tags:
english, 1996
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