Volume 39; Issue 5

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Solid-State Electronics
Volume 39; Issue 5

Solid-State Electronics

Volume 39; Issue 5

1

Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode

A.M.P.J Hendriks, W Magnus, T.G van de Roer

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 981 KB

english, 1996

2

The Child-Langmuir law as a model for electron transport in semiconductors

Naoufel Ben Abdallah, Pierre Degond, Ahmed Yamnahakki

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 755 KB

english, 1996

3

A novel two-step etching process for reducing plasma-induced oxide damage

Kuo-Feng You, Ching-Yuan Wu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 427 KB

english, 1996

4

High barrier metallic polymer/p-type silicon Schottky diodes

Y Onganer, M Saǧlam, A Türüt, H Efeoǧlu, S Tüzemen

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 445 KB

english, 1996

5

Non-equilibrium carrier transport in the base of heterojunction bipolar transistors

Melih Özaydin, Lester F Eastman

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 527 KB

english, 1996

6

A 3D analytical model for threshold voltage of small-geometry MOSFET

Arti Noor, Chandra Shekhar

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 585 KB

english, 1996

7

The conduction properties of the silicon/off-stoichiometry-SiO2 diode

M Aceves, C Falcony, A Reynoso-Hernandez, W Calleja, A Torres

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 756 KB

english, 1996

8

Space charge analysis of Si n+-i structures with application to far-infrared detectors

H.X Yuan, A.G.U Perera

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 895 KB

english, 1996

9

Electron cyclotron resonance plasma etching of InP and related materials in BCl3

F Ren, W.S Hobson, J.M Kuo, J.R Lothian, J Lopata, S.J Pearton, J.A Caballero

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 356 KB

english, 1996

10

Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation

Yuhua Cheng, Tor A Fjeldly

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 886 KB

english, 1996

11

Finite element Monte Carlo simulation of recess gate compound FFTs

S Babiker, A Asenov, J.R Barker, S.P Beaumont

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 696 KB

english, 1996

12

Modeling of anomalous current-voltage characteristics in floating body fully depleted SOI nMOSFETs

Ping-Chang Yang, Patrick S Liu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 585 KB

english, 1996

13

Correlation of the decay of tunneling currents with trap generation inside thin oxides

N.A Dumin, K.J Dickerson, D.J Dumin, B.T Moore

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 700 KB

english, 1996

14

Temperature effects on MOSFET driving capability and voltage gain

K Chen, J.H Huang, J.Z Ma, Z.H Liu, M.C Jeng, P.K Ko, C Hu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 233 KB

english, 1996

15

Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design

S Krishnan, J.G Fossum

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 711 KB

english, 1996

16

Study of Fowler-Nordheim tunneling current from polysilicon asperity surface into oxide based on accurate formulation utilizing the charge simulation method

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 670 KB

english, 1996

17

Comments on “Ehrenfest derivation of the mean forces acting in materials with nonuniform band structure: A canonical approach”

Y.L Le Coz, H.F Tiersten

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 140 KB

english, 1996

18

New complementary BiCMOS digital gates for low-voltage environments

S.S Rofail, Kiat Seng Yeo

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 497 KB

english, 1996

19

Passivation of carbon doping in InGaAs during ECR-CVD of SiNx

F Ren, R.A Hamm, J.R Lothian, R.G Wilson, S.J Pearton

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 222 KB

english, 1996

20

Determination of LDD MOSFET drain resistance from device simulation

G.S Samudra, B.P Seah, C.H Ling

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 549 KB

english, 1996

21

Effect of Ge incorporation on the performance of p-channel polycrystalline Si1−xGex thin-film transistors

H.C Lin, H.Y Lin, C.Y Chang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 655 KB

english, 1996

22

A finite number of sub-bands?

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 124 KB

english, 1996

23

Computer aided optimization of ion implantation impurity profiles for n+npp+ double drift IMPATT diodes with three moment approach

A.K Panda, G.N Dash, S.P Pati

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996