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Volume 41; Issue 10
Main
Solid-State Electronics
Volume 41; Issue 10
Solid-State Electronics
Volume 41; Issue 10
1
III–V heterostructure microelectronics for electronic and optoelectronic systems in Europe
A. Scavennec
,
R. Lefèvre
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 914 KB
Your tags:
english, 1997
2
HBTs in telecommunications
J. Sitch
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 568 KB
Your tags:
english, 1997
3
Hemt circuits for signal/data processing
M. Berroth
,
V. Hurm
,
M. Lang
,
Z. Lao
,
A. Thiede
,
Z.-G. Wang
,
A. Bangert
,
W. Bronner
,
A. Hülsmann
,
G. Kaufel
,
K. Köhler
,
B. Raynor
,
T. Jakobus
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 528 KB
Your tags:
english, 1997
4
Optoelectronic system integration using InP-based HBTs for lightwave communications
S. Chandrasekhar
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 425 KB
Your tags:
english, 1997
5
HBT devices and circuits for signal and data processing
R. Yu
,
S. Beccue
,
M.F. Chang
,
K. Nary
,
R. Nubling
,
K. Pedrotti
,
R. Pierson
,
K. Runge
,
N.H. Sheng
,
P. Thomas
,
P. Zampardi
,
K.C. Wang
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 996 KB
Your tags:
english, 1997
6
Complementary GaAs (CGaAs™): New enhancements
J.K. Abrokwah
,
B. Bernhardt
,
M. Lamacchia
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 448 KB
Your tags:
english, 1997
7
Inteface-controlled Schottky barriers on InP and related materials
H. Hasegawa
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 978 KB
Your tags:
english, 1997
8
Three-dimensional interconnect technology for ultra-compact MMICs
Makoto Hirano
,
Kenjiro Nishikawa
,
Ichihiko Toyoda
,
Shinji Aoyama
,
Suehiro Sugitani
,
Kimiyoshi Yamasaki
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 639 KB
Your tags:
english, 1997
9
Electron irradiation during Schottky gate metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs
Tamotsu Kimura
,
Ryoji Shigemasa
,
Tomoyuki Ohshima
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 287 KB
Your tags:
english, 1997
10
Small-signal response of interface states at passivated InGaAs surfaces from low frequencies up to microwave frequencies
K. Iizuka
,
T. Hashizume
,
H. Hasegawa
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 511 KB
Your tags:
english, 1997
11
A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer
Takashi Mizutani
,
K. Maezawa
,
Jun-Ichi Nozaki
,
Masashi Arakawa
,
Shigeru Kishimoto
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 637 KB
Your tags:
english, 1997
12
Influence of rapid thermal annealing on modulation doped structures
Daijiro Inoue
,
Shigeharu Matsushita
,
Kohji Matsumura
,
Minoru Sawada
,
Keiichi Yodoshi
,
Yasoo Harada
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 362 KB
Your tags:
english, 1997
13
Gamma dose effect on low noise AlGaAs/InGaAs PHEMT at millimeter-wave frequency
M. Komaru
,
K. Yajima
,
H. Sasaki
,
T. Katoh
,
T. Kashiwa
,
T. Asano
,
T. Takagi
,
Y. Mitsui
,
K. Matsuzaki
,
N. Nemoto
,
E. Nakamura
,
T. Akutsu
,
S. Matsuda
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 247 KB
Your tags:
english, 1997
14
SiGe heterojunction bipolar transistors—The noise perspective
Hermann Schumacher
,
Uwe Erben
,
Wolfgang Dürr
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 524 KB
Your tags:
english, 1997
15
High-performance SiSiGe HBTs SiGe-technology development in Esprit Project 8001 TIBIA: An overview
D. Terpstra
,
W.B. De Boer
,
J.W. Slotboom
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 834 KB
Your tags:
english, 1997
16
Manufacturability and applications of SiGe HBT technology
D.A. Sunderland
,
D.C. Ahlgren
,
M.M. Gilbert
,
S.-J. Jeng
,
J.C. Malinowski
,
D. Nguyen-Ngoc
,
K.T. Schonenberg
,
K.J. Stein
,
B.S. Meyerson
,
D.L. Harame
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 372 KB
Your tags:
english, 1997
17
Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures
D.J. Paul
,
J.M. Ryan
,
P.V. Kelly
,
G.M. Crean
,
J.M. Fernández
,
M. Pepper
,
A.N. Broers
,
B.A. Joyce
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 498 KB
Your tags:
english, 1997
18
Tunneling devices and applications in high functionality/speed digital circuits
G.I. Haddad
,
P. Mazumder
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 753 KB
Your tags:
english, 1997
19
Fabrication of p+-gate InAs-channel HEMT based on InP
Ryoji Koizumi
,
Toshiya Saitoh
,
Kanji Yoh
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 339 KB
Your tags:
english, 1997
20
Characterization of fully fabricated PHEMTs using photoelectric techniques
Fritz Schuermeyer
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 432 KB
Your tags:
english, 1997
21
High density and high mobility transport characteristics in gated undoped GaAsAl/xGa1−xAs heterostructures
J. Herfort
,
Y. Hirayama
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 517 KB
Your tags:
english, 1997
22
Design rules for n-type SiGe hetero FETs
U. König
,
M. Glück
,
A. Gruhle
,
G. Höck
,
E. Kohn
,
B. Bozon
,
D. Nuernbergk
,
T. Ostermann
,
R. Hagelauer
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 468 KB
Your tags:
english, 1997
23
Fabrication and characterization of GaN FETs
S.C. Binari
,
W. Kruppa
,
H.B. Dietrich
,
G. Kelner
,
A.E. Wickenden
,
J.A. Freitas Jr
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 470 KB
Your tags:
english, 1997
24
GaN based heterostructure for high power devices
M. Asif Khan
,
Q. Chen
,
Michael S. Shur
,
B.T. Dermott
,
J.A. Higgins
,
J. Burm
,
W.J. Schaff
,
L.F. Eastman
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 389 KB
Your tags:
english, 1997
25
High power applications for GaN-based devices
R.J. Trew
,
M.W. Shin
,
V. Gatto
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 567 KB
Your tags:
english, 1997
26
High power AlGaN/GaN HEMTs for microwave applications
Y.-F. Wu
,
B.P. Keller
,
S. Keller
,
D. Kapolnek
,
P. Kozodoy
,
S.P. Denbaars
,
U.K. Mishra
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 439 KB
Your tags:
english, 1997
27
Millimeter-wave power HEMTs
Shigemitsu Arai
,
Hirokuni Tokuda
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 469 KB
Your tags:
english, 1997
28
Development of double recessed AlInAs/GaInAs/InP HEMTs for millimeter wave power applications
Katerina Y. Hur
,
Rebeeca A. McTaggart
,
Peter J. Lemonias
,
William E. Hoke
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 356 KB
Your tags:
english, 1997
29
Double-doped power heterojunction FET for 1.5 V digital cellular applications
Naotaka Iwata
,
Keiko Yamaguchi
,
Masaaki Kuzuhara
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 263 KB
Your tags:
english, 1997
30
High power-added efficiency and low distortion GaAs power FET employing spike-gate structure
Hidetoshi Furukawa
,
Tsuyoshi Tanaka
,
Hiroshi Takenaka
,
Tetsuzo Ueda
,
Takeshi Fukui
,
Daisuke Ueda
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 542 KB
Your tags:
english, 1997
31
HBT IC manufacturability and reliability
Madjid Hafizi
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 1.05 MB
Your tags:
english, 1997
32
Current status of reliability of InGaP/GaAs HBTs
O. Ueda
,
A. Kawano
,
T. Takahashi
,
T. Tomioka
,
T. Fujii
,
S. Sasa
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 755 KB
Your tags:
english, 1997
33
High speed InGaP/GaAs HBTs with fmax of 159 GHz
T. Oka
,
K. Ouchi
,
K. Mochizuki
,
T. Nakamura
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 294 KB
Your tags:
english, 1997
34
High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier
Manabu Yanagihara
,
Hiroyuki Sakai
,
Yorito Ota
,
Akiyoshi Tamura
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 484 KB
Your tags:
english, 1997
35
Manufacturability and reliability of InP HEMTs
T. Sonoda
,
Y. Yamamoto
,
N. Hayafuji
,
H. Yoshida
,
H. Sasaki
,
T. Kitano
,
S. Takamiya
,
M. Ostubo
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 653 KB
Your tags:
english, 1997
36
InzAl1−zAs/InyGa1−yAs lattice constant engineered HEMTs on GaAs
D.P. Docter
,
J.J. Brown
,
M. Hu
,
M. Matloubian
,
J. Speck
,
X. Wu
,
D.E. Grider
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 788 KB
Your tags:
english, 1997
37
Fabrication and electrical characterization of InP-based insulated gate power HEMTS using ultrathin Si interface control layer
S. Suzuki
,
Y. Dohmae
,
H. Hasegawa
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 387 KB
Your tags:
english, 1997
38
0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
M. Nihei
,
N. Hara
,
H. Suehiro
,
S. Kuroda
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 398 KB
Your tags:
english, 1997
39
Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal
Takatomo Enoki
,
Hiroshi Ito
,
Yasunobu Ishii
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 492 KB
Your tags:
english, 1997
40
HBT power devices and circuits
Burhan Bayraktaroglu
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 1.35 MB
Your tags:
english, 1997
41
Thermal management of microwave power heterojunction bipolar transistors
C. Bozada
,
C. Cerny
,
G. De Salvo
,
R. Dettmer
,
J. Ebel
,
J. Gillespie
,
C. Havasy
,
T. Jenkins
,
C. Ito
,
K. Nakano
,
C. Pettiford
,
T. Quach
,
J. Sewell
,
G.D. Via
,
R. Anholt
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 798 KB
Your tags:
english, 1997
42
Self-aligned emitter power HBT and self-aligned gate power HFET for low/unity supply voltage operation in PHS handsets
Yorito Ota
,
Shinji Yamamoto
,
Takahiro Yokoyama
,
Hiroyuki Masato
,
Mitsuru Nishitsuji
,
Manabu Yanagihara
,
Kaoru Inoue
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 429 KB
Your tags:
english, 1997
43
InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ
Takyiu Liu
,
Mary Chen
,
Chanh Nguyen
,
Robinder Virk
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 466 KB
Your tags:
english, 1997
44
InP-based millimeter-wave PIN diodes for switching and phase-shifting application
Dimitris Pavlidis
,
Egor Alekseev
,
Kyushik Hong
,
Delong Cui
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 795 KB
Your tags:
english, 1997
45
Preface
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 72 KB
Your tags:
english, 1997
46
Author index
Journal:
Solid-State Electronics
Year:
1997
File:
PDF, 90 KB
Your tags:
1997
47
TWHM'96 committee members
Journal:
Solid-State Electronics
Year:
1997
File:
PDF, 31 KB
Your tags:
1997
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