Volume 41; Issue 12

Solid-State Electronics

Volume 41; Issue 12
1

High performance pseudomorphic InGaPInGaAs power HEMTs

F. Ren, J.R. Lothian, H.S. Tsai, J.M. Kuo, J. Lin, J.S. Weiner, R.W. Ryan, A. Tate, Y.K. Chen
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 239 KB
english, 1997
3

Optimum Ge profile for base transit time minimization of SiGe HBT

J. Song, J.S. Yuan
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 277 KB
english, 1997
5

n-Channel AlSbGaSb modulation-doped field-effect transistors

X. Li, Q. Du, J.B. Héroux, W.I. Wang
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 341 KB
english, 1997
6

Comparison of high speed DI-LIGBT structures

Ravishankar Sunkavalli, B.Jayant Baliga
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 398 KB
english, 1997
7

Modelling and characterization of non-uniform substrate doping

Christophe Lallement, Matthias Bucher, Christian Enz
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 428 KB
english, 1997
10

Stability of hydrogen in ScAlMgO4

C.D. Brandle, F. Ren, R.G. Wilson, J.W. Lee, S.J. Pearton, J.M. Zavada
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 232 KB
english, 1997
12

High performance Schottky contacts on Se-doped AlxGa1−xAs by cryogenic processing

L. He
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 333 KB
english, 1997
13

Theory of thermal noise in long-channel MOS transistors operating before saturation

Duheon Song, J.B. Lee, H.S. Mi, Y.J. Park
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 715 KB
english, 1997
15

Charge transport in thick SiO2-based dielectric layers

Sven Kanitz
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 689 KB
english, 1997
16

Modulation spectroscopy characterization of InP and GaAs solar cells

R.G. Rodrigues, J.M. Borrego
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 779 KB
english, 1997
17

Influence of the trench corner design on edge termination of UMOS power devices

Naresh Thapar, B.Jayant Baliga
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 744 KB
english, 1997
19

Wet chemical etching survey of III-nitrides

C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, F. Ren, J.C. Zolper, R.J. Shul
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 350 KB
english, 1997
21

Induced gate noise in MOSFETs revisited: The submicron case

D.P. Triantis, A.N. Birbas, S.E. Plevridis
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 444 KB
english, 1997