Volume 41; Issue 6

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Solid-State Electronics
Volume 41; Issue 6

Solid-State Electronics

Volume 41; Issue 6

1

Effects of plasma treatments on the erosion of TEOS-BPSG films by chemical etchants

Chongmu Lee, Su Cheon Lee

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 243 KB

english, 1997

2

Pd/Zn/Pd ohmic contacts to p-type GaP

Li Baojun, Liu Enke, Zhang Fujia

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 309 KB

english, 1997

3

Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er)

B Abay, Y Onganer, M Saǧlam, H Efeoǧlu, A Türüt, Y.K Yoǧurtçu

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 360 KB

english, 1997

4

Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

L.K.J Vandamme, E.P Vandamme, J.J Dobbelsteen

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 887 KB

english, 1997

5

Analytical model for high injection in SiSiGe heterojunction bipolar transistors (HBT)

P Ma, L Zhang, Y Wang

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 277 KB

english, 1997

6

Electroluminescence of MOS capacitors with Si-implanted SiO2

T Matsuda, M Nishio, T Ohzone, H Hori

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 692 KB

english, 1997

7

Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors

J.W Lee, C.R Abernathy, S.J Pearton, F Ren, R.J Shul, C Constantine, C Barratt

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 545 KB

english, 1997

8

Thermally induced capacitance and electric field domains in GaAsAl0.3Ga0.7As quantum well infrared photodetector

X.L Huang, Y.G Shin, K.Y Lim, E.-K Suh, H.J Lee, S.C Shen

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 675 KB

english, 1997

9

DC power limitation of the heterojunction bipolar transistor with dot geometry: Effect of base potential distribution on thermal runaway

L.L Liou, T Jenkins, C.I Huang

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 673 KB

english, 1997

10

Charge transport in amorphous and tetragonal semiconducting YBaCuO films

Z Çelik-Butler, P.C Shan, D.P Butler, A Jahanzeb, C.M Travers, W Kula, R Sobolewski

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 538 KB

english, 1997

11

Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes

C Meva'a, X Letartre, P Rojo-Romeo, P Viktorovitch

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 743 KB

english, 1997

12

The role of acceptor density in GaAsAlGaAs based quantum well HEMTs

M Nawaz, G.U Jensen

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 449 KB

english, 1997

13

Effect of poly thickness and substrate doping on the electrical characteristics of polyemitter n+-p junctions

A.V.N Tilak, K.N Bhat

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 466 KB

english, 1997

14

Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate

G.F Formicone, D Vasileska, D.K Ferry

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 697 KB

english, 1997

15

High-frequency simulation of nonlinear properties of a double-barrier device, using parallel computing

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 466 KB

english, 1997

16

Analysis of the operating-speed and power consumption of GaAs DCFL D-type flip-flops

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 456 KB

english, 1997

17

Variation of contact characteristics for metal to p+ junctions using TiN as diffusion barrier

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 373 KB

english, 1997

18

Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors

G.A Armstrong, J.R Ayres, S.D Brotherton

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 898 KB

english, 1997

19

Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures

A.M Minarsky, P.B Rodin

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 1.08 MB

english, 1997