Volume 42; Issue 4

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Solid-State Electronics
Volume 42; Issue 4

Solid-State Electronics

Volume 42; Issue 4

1

VARIATIONS IN THE COX AND STRACK CURVE FOR NON-ZERO METAL RESISTANCE

M. Ahmad, T. Ganguli, S. Major, N.R. Roy, B.M. Arora

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 189 KB

english, 1998

2

EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES

Steven V. Walstra, Chih-Tang Sah

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 160 KB

english, 1998

3

CORONA-OXIDE-SEMICONDUCTOR device CHARACTERIZATION

D.K. Schroder, M.S. Fung, R.L. Verkuil, S. Pandey, W.H. Howland, M. Kleefstra

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 472 KB

english, 1998

4

Selective laser annealing (SELA) used in the fabrication of Sub-0.1 μm MOSFETs

Hironori Tsukamoto, Toshiharu Suzuki

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 687 KB

english, 1998

5

DC characterisation of HBTs using the observed kink effect on the base current

M. Sotoodeh, A.H. Khalid, A.A. Rezazadeh

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 360 KB

english, 1998

6

Suppression of hot-carrier-induced degradation in n-mosfets at low temperatures by N2O-nitridation of gate oxide

P.T Lai, J.P Xu, L Huang, H.B Lo, Y.C Cheng

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 392 KB

english, 1998

7

Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy

P. Cova, A. Singh, A. Medina, R.A. Masut

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 304 KB

english, 1998

8

BASE TRANSIT TIME MINIMIZATION WITH FIXED BASE DOPANT DOSE

S.S. Winterton, N.G. Tarr

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 177 KB

english, 1998

9

THE CARNOT FACTOR IN SOLAR-CELL THEORY

Peter T. Landsberg, Tomas Markvart

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 143 KB

english, 1998

10

Determination of excess current due to impact ionization in polycrystalline silicon thin-film transistors

I. Policicchio, A. Pecora, R. Carluccio, L. Mariucci, G. Fortunato, F. Plais, D. Pribat

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 362 KB

english, 1998

11

Determination of the origin of the series resistance through electroluminescence measurements of GaAs and AlxGa1−xAs solar cells and LEDs

Rosa F. Reyna, Antonio Martı́, Juan C. Maroto

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

12

Properties of Si donors and persistent photoconductivity in AlGaN

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil'vidskii, J.M. Redwing, M. Shin, M. Skowronski, D.W. Greve, R.G. Wilson

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 286 KB

english, 1998

13

Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy

A.Y Polyakov, A.V Govorkov, N.B Smirnov, M.G Mil'vidskii, J.M Redwing, M Shin, M Skowronski, D.W Greve

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 1.37 MB

english, 1998

14

High temperature thermally stimulated currents analysis of CVD diamond films

E Borchi, M Bruzzi, S Pirollo, S Sciortino

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 191 KB

english, 1998

15

Performance of random-walk capacitance extractors for IC interconnects: A numerical study

Y.L. Le Coz, H.J. Greub, R.B. Iverson

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 366 KB

english, 1998

16

Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide

Won-Ju Cho, Eung-Soo Kim, Jun-Jin Kang, Kwan-Goo Rha, Hong-Seok Kim

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 1.09 MB

english, 1998

17

Reverse blocking lateral MOS-gated switches for ac power control applications

Manoj Mehrotra, B.Jayant Baliga

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 590 KB

english, 1998

18

Theory for the determination of backside contact resistance of semiconductor wafers from surface potential measurements

L.S. Tan, M.S. Leong, S.C. Choo

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 239 KB

english, 1998

19

Transit-time-limited shot noise due to carrier generation in semiconductors: a new approach

Y. Sato, H. Miyagi, H. Takano, S. Taguchi, T. Matsumoto, K. Sato

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 205 KB

english, 1998

20

High-frequency noise in heterojunction bipolar transistors

L. Escotte, J.G. Tartarin, R. Plana, J. Graffeuil

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 186 KB

english, 1998

21

A novel analytical model for short channel heterostructure field effect transistors

Sang-Ho Song, Dong Myong Kim

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 396 KB

english, 1998

22

Analytical capacitance model for submicron accumulation-mode SOI MOS devices

K.W. Su, J.B. Kuo

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 753 KB

english, 1998

23

Determination of polysilicon solar cell parameters using electrical short-circuit current decay method

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 280 KB

english, 1998

24

Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopy

I.M. Dharmadasa, C.J. Blomfield, C.G. Scott, R. Coratger, F. Ajustron, J. Beauvillain

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 728 KB

english, 1998

25

IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE?

C. Jungemann, B. Meinerzhagen, S. Decker, S. Keith, S. Yamaguchi, H. Goto

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 385 KB

english, 1998

26

The dual MOS-gated thyristor (DMGT) structure

D. Flores, J. Fernández, X. Jordà, J. Rebollo, P. Godignon, S. Hidalgo, J. Millán

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 349 KB

english, 1998

27

Strained-Si channel heterojunction p-MOSFETs

G.A. Armstrong, Chinmay K. Maiti

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 797 KB

english, 1998

28

Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs

X. Baie, J.P. Colinge

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 277 KB

english, 1998