Volume 43; Issue 10

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Solid-State Electronics
Volume 43; Issue 10

Solid-State Electronics

Volume 43; Issue 10

1

Numerical analysis of the detectivity in n+–n–p and p+–p–n GaInAsSb infrared detectors

Yuan Tian, Baolin Zhang, Tianming Zhou, Hong Jiang, Yixin Jin

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 245 KB

english, 1999

2

Discussion

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 86 KB

english, 1999

3

Discussion

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 64 KB

english, 1999

4

Unified model for short-channel poly-Si TFTs

Benjamı́n Iñiguez, Zheng Xu, Tor A. Fjeldly, Michael S. Shur

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 218 KB

english, 1999

5

Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics

P.K. Singh, B.B. Pal

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 227 KB

english, 1999

6

A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor

Zuxin Qin, E.M.S. Narayanan, M.M. De Souza

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 270 KB

english, 1999

7

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Hadis Morkoç, Roberto Cingolani, Bernard Gil

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 298 KB

english, 1999

8

Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation

S. Galdin, M.-E. Arbey, P. Dollfus, P. Hesto

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 210 KB

english, 1999

9

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

Shankar Sawant, S. Sridhar, B.Jayant Baliga

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 212 KB

english, 1999

10

Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors

Jong-Won Lim, Jae-Kyoung Mun, Myeong-Hyeon Kwak, Jae-Jin Lee

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 144 KB

english, 1999

11

An analytic model for turn off in the silicon-on-insulator LIGBT

D.M Garner, F Udrea, H.T Lim, W.I Milne

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 280 KB

english, 1999

12

Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy

A.Y Polyakov, A.V Govorkov, N.B Smirnov, M.G Mil'vidskii, D.V Tsvetkov, S.I Stepanov, A.E Nikolaev, V.A Dmitriev

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 193 KB

english, 1999

13

Contacts of titanium nitride to n- and p-type gallium nitride films

C.A Dimitriadis, Th Karakostas, S Logothetidis, G Kamarinos, J Brini, G Nouet

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 123 KB

english, 1999

14

Deep centers in AlGaN-based light emitting diode structures

A.Y Polyakov, N.B Smirnov, A.V Govorkov, M.G Mil'vidskii, A.S Usikov, B.V Pushnyi, W.V Lundin

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 161 KB

english, 1999

15

Design considerations and experimental analysis for silicon carbide power rectifiers

V Khemka, R Patel, T.P Chow, R.J Gutmann

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 329 KB

english, 1999