Volume 43; Issue 9

Main
Solid-State Electronics
Volume 43; Issue 9

Solid-State Electronics

Volume 43; Issue 9

1

Analysis of high-voltage trench bipolar junction diode (TBJD)

Budong You, Alex Q Huang, Johnny K.O Sin

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 461 KB

english, 1999

2

Schottky and ohmic contacts to doped Si1−x−yGexCy layers

Jeff J. Peterson, Charles E. Hunt, McDonald Robinson

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 211 KB

english, 1999

3

Correspondence

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 161 KB

english, 1999

4

Nonequilibrium electron relaxation in composite thin film containing silver nano-scale particles

J.L. Wu, C.M. Wang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 163 KB

english, 1999

5

Fabrication of the buried channel polycrystalline silicon TFT

Cheol-Min Park, Min-Koo Han

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

6

A new expression of excess stress and the stability of buried strained heterostructures

Zhi Jin, Shuren Yang, Haiyan An, Mingtao Li, Shiyong Liu

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 147 KB

english, 1999

7

The study on the growth and properties of Mg doped and Mg–Si codoped p-type GaN

Ki Soo Kim, Gye Mo Yang, Hyung Jae Lee

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 149 KB

english, 1999

8

Effect of strain on band structure and electron transport in InAs

Yasuko Hori, Yuji Ando, Yoshiyuki Miyamoto, Osamu Sugino

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 122 KB

english, 1999

9

Analysis of 0.5 μm channel Al/WSix/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation

M Kataoka, K Komuro, K Fujita, A Taniguchi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 177 KB

english, 1999

10

Mechanism of high density plasma processes for ion-driven etching of materials

J.W. Lee, J.F. Donohue, K.D. Mackenzie, R. Westerman, D. Johnson, S.J. Pearton

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 164 KB

english, 1999

11

Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation

M.H Juang, C.I Ou-Yang, C.T Lin, H.K Tiou

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

12

An energy relaxation time model for device simulation

B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 141 KB

english, 1999

13

Photoresponse of Si1−xGex heteroepitaxial p–i–n photodiodes

S. Chattopadhyay, P.K. Bose, C.K. Maiti

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

14

Tunnelling-assisted generation-recombination in pn a-Si junctions

J. Furlan, Ž. Gorup, F. Smole, M. Topič

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 133 KB

english, 1999

15

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

X.Y. Chen, C. Salm, F.N. Hooge, P.H. Woerlee

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 215 KB

english, 1999

16

Investigation of the optical, temperature dependent free-carrier absorption of a bipolar electron-hole plasma in silicon

T.T Mnatsakanov, A.E Schlögl, L.I Pomortseva, D Schröder

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

17

Static characteristics of high-barrier Schottky diode under high injection level

A.I. Prokopyev, S.A. Mesheryakov

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 180 KB

english, 1999

18

Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation

Alessandro Fantoni, Manuela Vieira, Rodrigo Martins

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 189 KB

english, 1999

19

A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hot electron experiments

K. Nuttall, S. Taylor

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

20

Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs

Zeynep Çelik-Butler, Petr Vasina

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 165 KB

english, 1999

21

Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 220 KB

english, 1999

22

Low-frequency gate current noise of InP based HEMTs

E. Simoen, H. van Meer, M. Valenza, K. van der Zanden, W. De Raedt

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 134 KB

english, 1999

23

Detection and fitting of the soft breakdown failure mode in MOS structures

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999