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Volume 43; Issue 9
Main
Solid-State Electronics
Volume 43; Issue 9
Solid-State Electronics
Volume 43; Issue 9
1
Analysis of high-voltage trench bipolar junction diode (TBJD)
Budong You
,
Alex Q Huang
,
Johnny K.O Sin
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 461 KB
Your tags:
english, 1999
2
Schottky and ohmic contacts to doped Si1−x−yGexCy layers
Jeff J. Peterson
,
Charles E. Hunt
,
McDonald Robinson
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 211 KB
Your tags:
english, 1999
3
Correspondence
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 161 KB
Your tags:
english, 1999
4
Nonequilibrium electron relaxation in composite thin film containing silver nano-scale particles
J.L. Wu
,
C.M. Wang
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 163 KB
Your tags:
english, 1999
5
Fabrication of the buried channel polycrystalline silicon TFT
Cheol-Min Park
,
Min-Koo Han
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 153 KB
Your tags:
english, 1999
6
A new expression of excess stress and the stability of buried strained heterostructures
Zhi Jin
,
Shuren Yang
,
Haiyan An
,
Mingtao Li
,
Shiyong Liu
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 147 KB
Your tags:
english, 1999
7
The study on the growth and properties of Mg doped and Mg–Si codoped p-type GaN
Ki Soo Kim
,
Gye Mo Yang
,
Hyung Jae Lee
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 149 KB
Your tags:
english, 1999
8
Effect of strain on band structure and electron transport in InAs
Yasuko Hori
,
Yuji Ando
,
Yoshiyuki Miyamoto
,
Osamu Sugino
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 122 KB
Your tags:
english, 1999
9
Analysis of 0.5 μm channel Al/WSix/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation
M Kataoka
,
K Komuro
,
K Fujita
,
A Taniguchi
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 177 KB
Your tags:
english, 1999
10
Mechanism of high density plasma processes for ion-driven etching of materials
J.W. Lee
,
J.F. Donohue
,
K.D. Mackenzie
,
R. Westerman
,
D. Johnson
,
S.J. Pearton
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 164 KB
Your tags:
english, 1999
11
Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation
M.H Juang
,
C.I Ou-Yang
,
C.T Lin
,
H.K Tiou
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 119 KB
Your tags:
english, 1999
12
An energy relaxation time model for device simulation
B. Gonzalez
,
V. Palankovski
,
H. Kosina
,
A. Hernandez
,
S. Selberherr
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 141 KB
Your tags:
english, 1999
13
Photoresponse of Si1−xGex heteroepitaxial p–i–n photodiodes
S. Chattopadhyay
,
P.K. Bose
,
C.K. Maiti
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 154 KB
Your tags:
english, 1999
14
Tunnelling-assisted generation-recombination in pn a-Si junctions
J. Furlan
,
Ž. Gorup
,
F. Smole
,
M. Topič
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 133 KB
Your tags:
english, 1999
15
1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations
X.Y. Chen
,
C. Salm
,
F.N. Hooge
,
P.H. Woerlee
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 215 KB
Your tags:
english, 1999
16
Investigation of the optical, temperature dependent free-carrier absorption of a bipolar electron-hole plasma in silicon
T.T Mnatsakanov
,
A.E Schlögl
,
L.I Pomortseva
,
D Schröder
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 172 KB
Your tags:
english, 1999
17
Static characteristics of high-barrier Schottky diode under high injection level
A.I. Prokopyev
,
S.A. Mesheryakov
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 180 KB
Your tags:
english, 1999
18
Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation
Alessandro Fantoni
,
Manuela Vieira
,
Rodrigo Martins
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 189 KB
Your tags:
english, 1999
19
A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hot electron experiments
K. Nuttall
,
S. Taylor
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 153 KB
Your tags:
english, 1999
20
Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs
Zeynep Çelik-Butler
,
Petr Vasina
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 165 KB
Your tags:
english, 1999
21
Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress
Piyas Samanta
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 220 KB
Your tags:
english, 1999
22
Low-frequency gate current noise of InP based HEMTs
E. Simoen
,
H. van Meer
,
M. Valenza
,
K. van der Zanden
,
W. De Raedt
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 134 KB
Your tags:
english, 1999
23
Detection and fitting of the soft breakdown failure mode in MOS structures
E Miranda
,
J Suñé
,
R Rodrı́guez
,
M Nafrı́a
,
X Aymerich
Journal:
Solid-State Electronics
Year:
1999
Language:
english
File:
PDF, 145 KB
Your tags:
english, 1999
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