Volume 47; Issue 4

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Solid-State Electronics
Volume 47; Issue 4

Solid-State Electronics

Volume 47; Issue 4

1

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

A Mihaila, F Udrea, G Brezeanu, G Amaratunga

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 337 KB

english, 2003

2

Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors

E. Danielsson, C.-M. Zetterling, M. Domeij, M. Östling, U. Forsberg, E. Janzén

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 166 KB

english, 2003

3

Fabrication of field emitter arrays using the mold method for FED application

Kyung-Jea Cho, Jeong-Tak Ryu, Sang-Yun Lee

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 238 KB

english, 2003

4

A modified Shockley–Read–Hall theory including radiative transitions

G. Beaucarne, M.A. Green

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 91 KB

english, 2003

5

High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching

C.S. Lin, Y.K. Fang, S.F. Ting, C.C. Wang, H.K. Huang, C.L. Wu, C.S. Chang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 257 KB

english, 2003

6

Reversible light coalescence phenomena of Si photo-emitters under stressing at low breakdown currents

A. Chatterjee, B. Bhuva

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 543 KB

english, 2003

7

Deep levels studies of AlGaN/GaN superlattices

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil’vidskii, S.J. Pearton, A.S. Usikov, N.M. Shmidt, A.V. Osinsky, W.V. Lundin, E.E. Zavarin, A.I. Besulkin

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 229 KB

english, 2003

8

Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

Baojun Li, Soo-Jin Chua, Yakovlev Nikolai, Lianshan Wang, Eng-Kee Sia

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 128 KB

english, 2003

9

Lateral polysilicon p+–p–n+ and p+–n–n+ diodes

Sooraj V. Karnik, Miltiadis K. Hatalis

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 185 KB

english, 2003

10

Fabrication and electrical characteristics of polymer-based Schottky diode

Guirong Liang, Tianhong Cui, Kody Varahramyan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 91 KB

english, 2003

11

The critical charge density in high voltage 4H-SiC thyristors

Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, Sergey N. Yurkov, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 233 KB

english, 2003

12

Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Chorng-Jye Sheu, Sheng-Lyang Jang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 235 KB

english, 2003

13

Electronic wavelength tuning of multisegment InGaAsP/InP lasers with laterally coupled absorptive DFB gratings

M. Körbl, A. Gröning, H. Schweizer, J.L. Gentner

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 134 KB

english, 2003

14

Analysis of the turn-off failure mechanism of silicon power diode

Alex Q Huang, Victor Temple, Yin Liu, Yuanzhu Li

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 1.10 MB

english, 2003

15

Process technique for SEU reliability improvement of deep sub-micron SRAM cell

P.K. Saxena, N. Bhat

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 333 KB

english, 2003

16

Achieving the ballistic-limit current in Si MOSFETs

Keunwoo Kim, Jerry G. Fossum

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

17

Non-equilibrium modeling of tunneling gate currents in nanoscale MOSFETs

Chung-Kuang Huang, Neil Goldsman

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 326 KB

english, 2003

18

Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT

Hyunchol Shin, Helmut Leier

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 214 KB

english, 2003

19

Photoassisted MOVPE grown (n)ZnSe/(p+)GaAs heterojunction solar cells

D.W. Parent, A. Rodriguez, J.E. Ayers, F.C. Jain

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003

20

Physical modeling of off-state breakdown in power GaAs MESFETs

Kazuaki Kunihiro, Yuji Takahashi, Yasuo Ohno

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

21

Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model

Jean-Michel Sallese, Matthias Bucher, François Krummenacher, Pierre Fazan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 144 KB

english, 2003

22

Modeling of kink effect in polysilicon thin film transistor using charge sheet approach

Simrata Bindra, Subhasis Haldar, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 176 KB

english, 2003

23

Persistent photoconductivity in ZnCdSe MBE films grown on GaAs

L. Hernández, Z. Rivera-Alvarez, L.M. Hernández-Ramı&amp, #x0301, rez, I. Hernández-Calderón

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 103 KB

english, 2003

24

Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

A. El Hdiy, R. Khlil, Dj. Ziane, I.V. Grekhov, A.F. Shulekin, M.I. Vexler

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

25

Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input

C.H. Oxley, B.M. Coaker, N.E. Priestley

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 337 KB

english, 2003

26

Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide

C.W. Yang, Y.K. Fang, S.F. Ting, C.H. Chen, W.D. Wang, T.Y. Lin, M.F. Wang, M.C. Yu, C.L. Chen, L.G. Yao, S.C. Chen, C.H. Yu, M.S. Liang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 194 KB

english, 2003

27

Publishers Note

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 27 KB

english, 2003