Volume 47; Issue 9

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Solid-State Electronics
Volume 47; Issue 9

Solid-State Electronics

Volume 47; Issue 9

1

Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Jihyun Kim, B.P. Gila, C.R. Abernathy, G.Y. Chung, F. Ren, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 228 KB

english, 2003

2

Empirical reliability modeling for 0.18-μm MOS devices

Zhi Cui, Juin J. Liou, Yun Yue, Jim Vinson

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

3

Current–voltage characteristics of GaSb homojunctions prepared by MOVPE

J. Toušková, D. Kindl, B. Blahitka, J. Toušek, E. Hulicius, J. Pangrác, E. Samochin, T. Šimeček, Z. Výborný

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 155 KB

english, 2003

4

Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

K.H. Baik, Y. Irokawa, F. Ren, S.J. Pearton, S.S. Park, Y.J. Park

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 202 KB

english, 2003

5

Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p–i–n rectifiers

S. Nigam, Jihyun Kim, B. Luo, F. Ren, G.Y. Chung, K. Shenai, P.G. Neudeck, S.J. Pearton, J.R. Williams

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

6

Nitride-based LEDs fabricated on patterned sapphire substrates

S.J. Chang, Y.C. Lin, Y.K. Su, C.S. Chang, T.C. Wen, S.C. Shei, J.C. Ke, C.W. Kuo, S.C. Chen, C.H. Liu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 232 KB

english, 2003

7

Electron mobility and terahertz detection using silicon MOSFETs

Yanqing Deng, Michael S. Shur

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 696 KB

english, 2003

8

Zero-point correction of the carrier density in the measurement of MOS inversion-layer mobility

Kazuo Terada, Shinya Okamoto

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 95 KB

english, 2003

9

A comparative investigation of the MCST with MCT and IGBT

S Huang, F Udrea, G.A.J Amaratunga

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 201 KB

english, 2003

10

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 114 KB

english, 2003

11

Non-destructive deep trap diagnostics of epitaxial structures

Nikolai B. Gorev, Inna Kodzhespirova, Evgeny N. Privalov, Levan Khvedelidze, Nina Khuchua, Giorgi G. Peradze, Michael S. Shur, Kevin Stevens

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 214 KB

english, 2003

12

High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications

Bin Li, Z.H. Wu, P.T. Lai, J.K.O. Sin, B.Y. Liu, X.R. Zheng

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 239 KB

english, 2003

13

All-polymer capacitor fabricated with inkjet printing technique

Yi Liu, Tianhong Cui, Kody Varahramyan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 334 KB

english, 2003

14

Properties of Mn and Co implanted ZnO crystals

A.Y. Polyakov, A.V. Govorkov, N.B. Smirnov, N.V. Pashkova, S.J. Pearton, M.E. Overberg, C.R. Abernathy, D.P. Norton, J.M. Zavada, R.G. Wilson

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 195 KB

english, 2003

15

RF performance of GaN-based npn bipolar transistors

K.P. Lee, A. Dabiran, A. Osinsky, P.P. Chow, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 254 KB

english, 2003

16

Temperature dependence of MgO/GaN MOSFET performance

Hyun Cho, K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 377 KB

english, 2003

17

Gate breakdown characteristics of MgO/GaN MOSFETs

Hyun Cho, K.P. Lee, B.P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 104 KB

english, 2003

18

Effective-channel-length extraction for double-diffused MOSFETs

Kazuo Terada, Sanae Ichikawa, Yuu Eshima, Tomonari Yamauchi, Takeo Matsuki

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 165 KB

english, 2003

19

Low frequency current noise in 2.5 nm MOSFET and fractal dimension of soft breakdown

Zongliang Huo, Lingfeng Mao, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 207 KB

english, 2003

20

The effect of titanium on Al–Ti contacts to p-type 4H-SiC

Brian J. Johnson, Michael A. Capano

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 193 KB

english, 2003

21

Ferromagnetism in Mn- and Cr-implanted AlGaP

M.E. Overberg, G.T. Thaler, R.M. Frazier, R. Rairigh, J. Kelly, C.R. Abernathy, S.J. Pearton, A.F. Hebard, R.G. Wilson, J.M. Zavada

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 162 KB

english, 2003

22

A capacitance–voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge

Eric M. Vogel, Curt A. Richter, Brian G. Rennex

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 367 KB

english, 2003

23

Model for random telegraph signals in sub-micron MOSFETS

Nuditha Vibhavie Amarasinghe, Zeynep Çelik-Butler, Anna Zlotnicka, Fang Wang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 229 KB

english, 2003

24

A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs

A. Vandooren, S. Cristoloveanu, J.F. Conley Jr., M. Mojarradi, E. Kolawa

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 349 KB

english, 2003

25

Analysis of interstrip capacitance of Si microstrip detector using simulation approach

Sudeep Chatterji, Ashutosh Bhardwaj, Kirti Ranjan, Namrata, Ajay K. Srivastava, R.K. Shivpuri

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

26

Hot-electron induced MOSFET gate current simulation by coupled silicon/oxide Monte Carlo device simulation

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 188 KB

english, 2003

27

Modeling the polarization in ferroelectric materials: a novel analytical approach

Vincent Meyer, Jean-Michel Sallese, Pierre Fazan, Delphine Bard, François Pecheux

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

28

The critical charge concept for 4H-SiC-based thyristors

Tigran T. Mnatsakanov, Sergey N. Yurkov, Michael E. Levinshtein, Aleksey G. Tandoev, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 184 KB

english, 2003

29

High power nitride based light emitting diodes with Ni/ITO p-type contacts

Y.C. Lin, S.J. Chang, Y.K. Su, C.S. Chang, S.C. Shei, J.C. Ke, H.M. Lo, S.C. Chen, C.W. Kuo

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 118 KB

english, 2003