Volume 49; Issue 12

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Solid-State Electronics
Volume 49; Issue 12

Solid-State Electronics

Volume 49; Issue 12

1

An accurate and compact large signal model for III–V HBT devices

A. Issaoun, F.M. Ghannouchi, A.B. Kouki

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 558 KB

english, 2005

2

A 765 mW high-voltage switching ADSL line-driver

V. De Gezelle, J. Doutreloigne, A. Van Calster

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 446 KB

english, 2005

3

Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy

R.R. Ciechonski, M. Syväjärvi, Q. Wahab, R. Yakimova

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 289 KB

english, 2005

4

New dielectric material system of Nd(Mg1/2Ti1/2)O3–CaTiO3 at microwave frequency

Cheng-Liang Huang, Yuan-Bin Chen, Shih-Hung Lin

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 160 KB

english, 2005

5

Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation

Zhiliang Xia, Gang Du, Xiaoyan Liu, Jinfeng Kang, Ruqi Han

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 144 KB

english, 2005

6

Efficient white organic light-emitting device based on a thin layer of hole-transporting host with rubrene dopant

Mingtao Li, Wenlian Li, Jinghua Niu, Bei Chu, Bin Li, Xiaoyan Sun, Zhiqiang Zhang, Zhizhi Hu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 249 KB

english, 2005

7

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

June-O Song, Hun Kang, I.T. Ferguson, Sung-Pyo Jung, H.P. Lee, Hyun-Gi Hong, Takhee Lee, Tae-Yeon Seong

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 202 KB

english, 2005

8

Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC

Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 240 KB

english, 2005

9

Simulation prediction of electrothermal behaviors of ESD N/PMOS devices

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 491 KB

english, 2005

10

High performance GaAs MESFETs with molecular implanted and optimized lowly-doped drain structure for maximized speed, gain and breakdown performance

Walter A. Wohlmuth, Bill Davenport, Tyler Bowman, Pat Hamilton, Robert Hallgren, Frederick S. Pool, Andy Turudic

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 493 KB

english, 2005

11

A three-terminal planar selfgating device for nanoelectronic applications

T. Müller, A. Lorke, Q.T. Do, F.J. Tegude, D. Schuh, W. Wegscheider

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 362 KB

english, 2005

12

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Jun-Qi Liu, Feng-Qi Liu, Xiu-Zhen Lu, Yu Guo, Zhan-Guo Wang

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 238 KB

english, 2005

13

Modeling Kirk effect of RESURF LDMOS

Zhilin Sun, Weifeng Sun, Longxing Shi

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 138 KB

english, 2005

14

ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes

Xiongwen Shu, Chen Xu, Zengxia Tian, Guangdi Shen

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 78 KB

english, 2005

15

Antimonide-based compound semiconductors for electronic devices: A review

Brian R. Bennett, Richard Magno, J. Brad Boos, Walter Kruppa, Mario G. Ancona

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 713 KB

english, 2005

16

Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices

P. Li, A. Rodriguez, B. Yarlagadda, R. Velampati, J.E. Ayers, F.C. Jain

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 101 KB

english, 2005

17

Simulation of a cobalt silicide/Si hetero-nanocrystal memory

Dengtao Zhao, Yan Zhu, Ruigang Li, Jianlin Liu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

18

dV/dt effect in high-voltage (1.5 kV) 4H–SiC thyristors

Sergey N. Yurkov, Tigran T. Mnatsakanov, Michael E. Levinshtein, Pavel A. Ivanov, Anant K. Agarwal, John W. Palmour

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005

19

A new partial SOI power device structure with P-type buried layer

Baoxing Duan, Bo Zhang, Zhaoji Li

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 324 KB

english, 2005

20

Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

D.L. Pulfrey, G. Parish, D. Wee, B.D. Nener

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

21

InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts

Shui-Hsiang Su, Cheng-Chieh Hou, Meiso Yokoyama, Shi-Ming Chen

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 167 KB

english, 2005

22

A CMOS active pixel sensor based DNA micro-array with nano-metallic particles detection protocol

Yijin Wang, Chen Xu, Jiong Li, I-Ming Hsing, Mansun Chan

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 275 KB

english, 2005

23

The annealing effect for structural, optical and electrical properties of dysprosium–manganese oxide films grown on Si substrate

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

24

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

Tsugutomo Kudoh, Tanemasa Asano

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 384 KB

english, 2005

25

Numerical analysis of the cut-off frequency of ultra-small ballistic double-gate MOSFETs: 2D nonequilibrium Green’s function approach

Song Zhou, Jianfei Jiang, Qiyu Cai

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 193 KB

english, 2005

26

Channel electron mobility in 4H–SiC lateral junction field effect transistors

P. Sannuti, X. Li, F. Yan, K. Sheng, J.H. Zhao

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

27

Author Index

Journal:

Solid-State Electronics

Year:

2005

File:

PDF, 42 KB

2005

28

Keyword Index

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 46 KB

english, 2005