Volume 51; Issue 6

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Solid-State Electronics
Volume 51; Issue 6

Solid-State Electronics

Volume 51; Issue 6

1

A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function

Rongsheng Chen, Xueren Zheng, Wanling Deng, Zhaohui Wu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 420 KB

english, 2007

2

Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 340 KB

english, 2007

3

Effect of base–emitter breakdown on class-C power performance of common-base InGaP/GaAs HBTs

Subrata Halder, James C.M. Hwang, Jiyoun Lim, Sanghoon Cheon

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 224 KB

english, 2007

4

Modeling the effect of source/drain junction depth on bulk-MOSFET scaling

Raghunath Murali, James D. Meindl

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 289 KB

english, 2007

5

An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs

Gagan Khanduri, Brishbhan Panwar

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 194 KB

english, 2007

6

On the temperature stability of integrated MIS low-pass filter structures

M. Kühn, M. Aeron, R. Florange, H. Kliem

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 292 KB

english, 2007

7

Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory

Ting Zhang, Zhitang Song, Bo Liu, Songlin Feng, Bomy Chen

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 422 KB

english, 2007

8

High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications

Chen Li, Huailin Liao, Li Yang, Ru Huang

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 852 KB

english, 2007

9

A study of ion implantation into crystalline germanium

R. Wittmann, S. Selberherr

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 595 KB

english, 2007

10

Compact K-band bandpass filter on high-k LiNbO3 substrate

Chia-Sung Wu, Hsing-Chung Liu, Zhi-Ping Liu, Hsien-Chin Chiu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 254 KB

english, 2007

11

Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

Dimitrios N. Kouvatsos, Filippos V. Farmakis, Despina C. Moschou, Giannis P. Kontogiannopoulos, George J. Papaioannou, Apostolos T. Voutsas

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 688 KB

english, 2007

12

Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits

José M. Ruiz-Palmero, Urs Hammer, Heinz Jäckel, Honggang Liu, C.R. Bolognesi

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1.13 MB

english, 2007

13

Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Niu Nanhui, Wang Huaibing, Liu Jianping, Liu Naixin, Xing Yanhui, Han Jun, Deng Jun, Shen Guangdi

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 491 KB

english, 2007

14

Qualitative analysis on gain compression in power MOS transistor

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 156 KB

english, 2007

15

Gas-sensing properties and complex impedance analysis of Ce-added WO3 nanoparticles to VOC gases

Shijun Luo, Gang Fu, Huan Chen, Zhiyu Liu, Qiusan Hong

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 875 KB

english, 2007

16

Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs

N.G. Tao, H.G. Liu, C.R. Bolognesi

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 899 KB

english, 2007

17

Reduced temperature S-parameter measurements of 400+ GHz sub-micron InP DHBTs

James Chingwei Li, Tahir Hussain, Donald A. Hitko, Yakov Royter, Charles H. Fields, Ivan Milosavljevic, Stephen Thomas III, Rajesh D. Rajavel, Peter M. Asbeck, Marko Sokolich

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 484 KB

english, 2007

18

Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes

M. Özer, D.E. Yıldız, Ş. Altındal, M.M. Bülbül

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

19

1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index-coupled distribution feedback laser diodes

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 423 KB

english, 2007

20

Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Jun-Chin Huang, Wei-Chou Hsu, Ching-Sung Lee, Dong-Hai Huang, Ming-Feng Huang

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 265 KB

english, 2007

21

A single-poly EEPROM cell structure compatible to standard CMOS process

Ching-Fang Lin, Cherng-Yuan Sun

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 658 KB

english, 2007

22

Influence of ultrasound on the growth striations and electrophysical properties of GaxIn1−xSb single crystals

G.N. Kozhemyakin, L.V. Zolkina, M.A. Rom

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 164 KB

english, 2007

23

Ultraviolet electroluminescence from organic light-emitting diode with cerium(III)–crown ether complex

Tianzhi Yu, Wenming Su, Wenlian Li, Ruinan Hua, Bei Chu, Bin Li

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 200 KB

english, 2007

24

Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation

Raid A. Ismail, Wafa’a K. Khalaf, Omar A. Abdulrazaq

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 288 KB

english, 2007

25

Editorial Board

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 81 KB

english, 2007

26

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

P. Khare, D. Schroder, R. Sampson

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 306 KB

english, 2007

27

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.-J. Würfl, M.-A. di Forte Poisson, J.-P. Teyssier, C. Gaquière, D. Pogany

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 733 KB

english, 2007

28

Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, Wu Lu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

29

Exact solutions for the capacitance of space charge regions at semiconductor interfaces

M. Schmidt, R. Pickenhain, M. Grundmann

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 128 KB

english, 2007

30

MOSFET I–V characteristics at small and large drain biases in the linear region

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 277 KB

english, 2007

31

Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes

Dong Myong Kim, Dae Hwan Kim, Soon Young Lee

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 308 KB

english, 2007

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