Volume 8; Issue 3

Solid-State Electronics

Volume 8; Issue 3
2

Surface capacity of oxide coated semiconductors

R. Hall, J.P. White
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 1.11 MB
english, 1965
5

Double diffused gallium arsenide transistors

H. Becke, D. Flatley, D. Stolnitz
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 771 KB
english, 1965
6

Effect of surface traps on characteristics of insulated-gate field-effect transistors

T.J. O'Reilly
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 544 KB
english, 1965
7

P+IN+ silicon diodes at high forward current densities

N.R. Howard, G.W. Johnson
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 692 KB
english, 1965
9

Breakdown characteristics and light emissions observed on silicon alloyed pn junctions

M. Migitaka
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 859 KB
english, 1965
10

Minority carrier injection and charge storage in epitaxial Schottky barrier diodes

D.L. Scharfetter
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 845 KB
english, 1965
12

Physical limitations on the frequency response of a semiconductor surface inversion layer

S.R. Hofstein, G. Warfield
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 1.70 MB
english, 1965
13

An alloy process for making high current density silicon tunnel diode junctions

V.M. Franks, K.F. Hulme, J.R. Morgan
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 167 KB
english, 1965
14

Magnetoresistance of InSbNiSb at microwave frequency

S.F. Sun
Journal:
Solid-State Electronics
Year:
1965
Language:
english
File:
PDF, 164 KB
english, 1965