Volume 174; Issue 1-3

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Surface Science Letters
Volume 174; Issue 1-3

Surface Science Letters

Volume 174; Issue 1-3

1

Editorial Board

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 87 KB

english, 1986

2

Preface

Hiroyuki Sakaki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 59 KB

english, 1986

3

Word of welcome

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

4

Executive members of the foundation (1985)

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

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english, 1986

5

The determination of MBE growth mechanisms using dynamic RHEED techniques

B.A. Joyce, P.J. Dobson, J.H. Neave, Jing Zhang

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

6

Ultrathin GaAs/GaAlAs layers grown by MOCVD and their structural characterization

N. Watanabe, Y. Mori

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

7

Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE

Masahiro Akiyama, Seiji Nishi, Katsuzo Kaminishi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

8

Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

9

Kinetic and thermodynamic aspects of metal organic MBE

R. Heckingbottom, K.A. Prior

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

10

Superlattice structures grown by metalorganic MBE

E. Tokumitsu, T. Katoh, C.P. Sung, A. Sandhu, R. Kimura, M. Konagai, K. Takahashi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 66 KB

english, 1986

11

A molecular statics and dynamics study of epitaxial growth fronts

A. Kobayashi, Sun-Mok Paik, K.E. Khor, S. Das Sarma

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 66 KB

english, 1986

12

The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures

T.C. Lee, M.Y. Yen, P. Chen, A. Madhukar

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 132 KB

english, 1986

13

Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothing

M. Tanaka, H. Sakaki, J. Yoshino, T. Furuta

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 68 KB

english, 1986

14

Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy

T. Fukunaga, K.L.I. Kobayashi, H. Nakashima

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 68 KB

english, 1986

15

Interface disorder in GaAs/AlGaAs quantum wells grown by MBE

T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano, T. Hijikata

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

16

High contrast TEM observation of lattice image of GaAs-AlGaAs superlattice with [100] electron beam incidence

Y. Suzuki, H. Okamoto

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

17

New electron microscopy for composition analysis of GaAs/AlxGa1−xAs heterointerfaces

H. Kakibayashi, F. Nagata

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

18

High-resolution double-crystal x-ray diffraction for improved assessment of modulated semiconductor structures

L. Tapfer, W. Stolz, A. Fischer, K. Ploog

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 52 KB

english, 1986

19

Raman scattering on confined optical phonons in superlattices: A tool for studying interface thickness

Bernard Jusserand, Daniel Paquet, Francois Alexandre, André Regreny

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 52 KB

english, 1986

20

Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

Y. Hirayama, Y. Suzuki, H. Okamoto

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

21

Theory of valence subbands in GaAs heterostructures

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

22

Optical processes in semiconductor quantum wells

C. Delalande, M. Voos

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

23

Preparation and properties of a new GaAs sawtooth doping superlattice

K. Ploog, A. Fischer, E.F. Schubert

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

24

MBE growth and energy levels of quantum wells with special shapes

A.C. Gossard, R.C. Miller, W. Wiegmann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

25

Giant oscillations and increase of the photoluminescence efficiency of GaAs-AlGaAs modulation-doped multiquantum wells as a function of axial magnetic field

M.C. Smith, A. Petrou, C.H. Perry, J.M. Worlock

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 111 KB

english, 1986

26

Size-indduced direct-to-indirect gap transition in GaSb/AlSb multiple quantum well structures

A. Forchel, U. Cebulla, G. Tränkle, H. Kroemer, S. Subbanna, G. Griffiths

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

27

Properties of 2D quantum well lasers

J. Nagle, S. Hersee, M. Razeghi, M. Krakowski, B. De Cremoux, C. Weisbuch

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

28

Dynamic and spectral properties of semiconductor lasers with quantum-well and quantum-wire effects

Y. Arakawa, K. Vahala, A. Yariv

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

29

Reduction of Auger effect by GaSb quantum well lasers in the 1.5 μm wavelength region

Akira Sugimura, Erwin Patzak, Peter Meissner

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

30

Theory of Auger recombination in a quantum well wire

R.I. Taylor, R.W. Kelsall, R.A. Abram

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

31

Spectroscopy of excitons and phonons in quantum well heterostructures

J.E. Zucker, A. Pinczuk, D.S. Chemla, A. Gossard, W. Wiegmann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

32

Oscillator strength of excitons in quantum wells

Mitsuru Matsuura, Tsuneo Kamizato

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 61 KB

english, 1986

33

Magneto-optical determination of the exciton binding energy in GaAs quantum wells

W. Ossau, B. Jäkel, E. Bangert, G. Landwehr, G. Weimann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 52 KB

english, 1986

34

A magneto-optical absorption study of AlxGa1−xAs ternary alloy quantum wells

Seigo Tarucha, Hidetoshi Iwamura, Tadashi Saku, Hiroshi Okamoto, Yoshihiro Iwasa, Noboru Miura

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 52 KB

english, 1986

35

Resonant Raman scattering in GaAs-AlGaAs and GaAs-AlAs multi-quantum well structures and its dependence on electric field

T. Furuta, H. Sakaki, J. Yoshino

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

36

Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

O.J. Glembocki, B.V. Shanabrook, W.T. Beard

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

37

Quasi-two-dimensional electron-hole plasma in GaAs-GaAlAs MQW structures: band-filling effects and band-gap renormalization

G. Tränkle, H. Leier, A. Forchel, G. Weimann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 111 KB

english, 1986

38

Extrinsic photoluminescence of GaAs-GaAlAs quantum wells

Z.Y. Xu, Z.G. Chen, D. Teng, W.H. Zhuang, J.Y. Xu, J.Z. Xu, B.Z. Zhen, J.B. Liang, M.Y. Kong

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

39

Novel optical modulators and bistable devices using the self-electro-optic effect in semiconductor quantum wells

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

40

Long-wavelength optical modulation in multiple quantum wells

K. Wakita, Y. Kawamura, Y. Yoshikuni, H. Asahi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

41

Room-temperature observation of exciton and its electric field effect in GaSb-AlxGa1−xSb multi quantum wells

T. Miyazawa, S. Tarucha, Y. Ohmori, H. Okamoto

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

42

Investigation of luminescence and non-linear optical properties of hetero n-i-p-i superlattices

GottfriedH. Dohler, J.N. Miller, R.A. Street, P.P. Ruden

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 110 KB

english, 1986

43

Transient response of photoluminescence to an electric field in a GaAs/Al0.7Ga0.3As single quantum well: Evidence for field-induced increase in carrier lifetime

Masamichi Yamanishi, Yuichi Usami, Yasuo Kan, Ikuo Suemune

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

44

Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric field

K. Yamanaka, T. Fukunaga, N. Tsukada, K.L.I. Kobayashi, M. Ishii

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

45

Transient photovoltaic effect in InAs-GaSb superlattices

P. Voisin, J.A. Brum, M. Voos, L.L. Chang, L. Esaki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 76 KB

english, 1986

46

Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures

J. Christen, D. Bimberg

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 76 KB

english, 1986

47

Photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laser

H. Uchiki, T. Kobayashi, Y. Arakawa, H. Sakaki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 63 KB

english, 1986

48

Photocurrent and picosecond photoluminescence spectroscopy in GaAs/AlGaAs quantum wells

H.-J. Polland, Y. Horikoshi, E.O. Göbel, J. Kuhl, K. Ploog

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 63 KB

english, 1986

49

Picosecond spectroscopy of two-dimensional excitons in GaAs- and AlxGa1−xAs-AlAs multi-quantum-well structures

Yasuaki Masumoto, Seigo Tarucha, Hiroshi Okamoto

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

50

Electron-hole recombination spectra and kinetics in PbTe/PbEuTeSe multiquantum wells

W. Goltsos, J. Nakahara, A.V. Nurmikko, D.L. Partin

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 56 KB

english, 1986

51

Excitons and their kinetics in CdTe/(Cd, Mn)Te and ZnSe/(Zn, Mn)Se quantum wells

X.-C. Zhang, Y. Hefetz, S.-K. Chang, J. Nakahara, L.A. Kolodziejski, R.L. Gunshor, S. Datta

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 57 KB

english, 1986

52

Band offsets at heterointerfaces: Theoretical basis, and review, of recent experimental work

Herbert Kroemer

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

53

Determination of band-gap discontinuity in AlGaAs/GaAs system by quantum oscillations of photoluminescence intensity

T. Mishima, J. Kasai, M. Morioka, Y. Sawada, Y. Katayama, Y. Shiraki, Y. Murayama

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

54

Internal photoemission — A suitable method for determining band offsets in semiconductor heterostructures

G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

55

Energy band discontinuities in heterojunctions measured by internal photoemission

M. Heiblum, M.I. Nathan, M. Eizenberg

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 40 KB

english, 1986

56

Energy band alignment in GaAs:(Al,Ga)As heterostructures

J. Batey, S.L. Wright

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 40 KB

english, 1986

57

Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface

H. Okumura, S. Misawa, S. Yoshida

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 40 KB

english, 1986

58

CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfaces

K. Steiner, R. Schmitt, R. Zuleeg, L.M.F. Kaufmann, K. Heime, E. Kuphal, J. Wolter

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 87 KB

english, 1986

59

Band offsets at pseudo-ternary semiconductor-alloy heterojunctions

Masao Nakao, Shun-ichi Gonda

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

60

HEMT technology: Potential and advances

T. Mimura, M. Abe, A. Shibatomi, M. Kobayashi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

61

High field transient transport in modulation doped heterostructures

Kiyoyuki Yokoyama, Karl Hess

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

62

Steady-state and picosecond investigation of hot carrier-phonon interactions in 2D systems

J. Shah, A. Pinczuk, A.C. Gossard, W. Wiegmann, K. Kash

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

63

Properties of and prospects for the GaAs gate heterojunction fet

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

64

A p-channel AlGaAs/GaAs MIS-like heterostructure fet employing two-dimensional hole gas

K. Oe, M. Hirano, K. Arai, F. Yanagawa, K. Tsubaki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

65

Subband structures of high mobility electrons in selectively-doped AlGaAs/GaAs/AlGaAs double-heterojunction fet systems

K. Inoue, H. Sakaki, J. Yoshino, K. Hirakawa

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

66

Electron concentrations and mobilities in selectively doped AlGaAs-GaAs-AlGaAs double heterostructures

H. Burkhard, W. Schlapp, G. Weimann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

67

Electro-optical investigations of selectively doped heterostructure transistors (SDHTs)

R.A. Höpfel, J. Shah, A.C. Gossard, W. Weigmann

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

68

Experimental and theoretical studies of the 2DEG mobility in modulation-doped GaAs/Al1−xGaxAs heterostructures

B.J.F. Lin, D.C. Tsui

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

69

Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility

J.M. Woodall, P.D. Kirchner, G.D. Pettit, J.J. Rosenberg

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

70

High-mobility two-dimensional electron gas in modulation-doped InAlAs/InGaAs heterostructures

Kentaro Onabe, Yoshiharu Tashiro, Yuichi Ide

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

71

Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure

Toshio Baba, Masaki Ogawa, Takashi Mizutani

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 94 KB

english, 1986

72

Ground impurity level in GaAs-AlGaAs superlattices

Lidério Ioriatti, Raphael Tsu

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

73

Charge transfer in photoexcited AlxGa1−xAs/GaAs heterojunctions

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

74

Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature

M.I. Nathan, P.M. Mooney, P.M. Solomon, S.L. Wright

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

75

Electronic properties of Si atomic-planar-doped GaAs/AlAs quantum well structures grown by MBE

Shigehiko Sasa, Kazuhiro Kondo, Hideaki Ishikawa, Toshio Fujii, Shunichi Muto, Satoshi Hiyamizu

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

76

Aharonov-Bohm oscillations due to quantum interference between parallel quantum wells

S. Datta, S. Bandyopadhyay, M.R. Melloch, R. Reifenberger, M. Miller, M. Vaziri, T. Dungan, M. Cahay, R. Noren

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 45 KB

english, 1986

77

Non-equilibrium cyclotron resonances in GaInAs/InP two-dimensional electron gas

Syoji Yamada, Takashi Fukui, Akira Sugimura

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

78

Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

H. Munekata, E.E. Mendez, Y. Iye, L. Esaki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

79

Alloy scattering limited mobility in ultrathin wires of ternary semiconductors

P.K. Basu, C.K. Sarkar

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 94 KB

english, 1986

80

Polaron transport in quasi-one-dimensional semiconductor heterostructures

E.S. Hellman, J.S. Harris

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

81

Magnetotunneling from accumulation layers in AlxGa1−xAs capacitors

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

82

GaAs/(AlGa)As tunnelling devices: hydrostatic pressure investigation and model for the J(V) characteristics

D.C. Taylor, P.S.S. Guimaraes, B.R. Snell, L. Eaves, F.W. Sheard, G.A. Toombs, J.C. Portal, L. Dmowski, K.E. Singer, G. Hill, M.A. Pate

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

83

Tunneling hot electron transfer amplifiers (theta): ballistic GaAs devices with current gain

M. Heiblum, D.C. Thomas, C.M. Knoedler, M.I. Nathan

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

84

Characterization of GaAs/AlGaAs hot electron transistors using magnetic field effects on launched-electron transport

K. Imamura, S. Muto, N. Yokoyama, M. Sasa, H. Ohnishi, S. Hiyamizu, H. Nishi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

85

Current prospects for the permeable base transistor

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

86

Effective mass filtering: new quantum photoconductivity in superlattices

F. Capasso, K. Mohammed, A.Y. Cho

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

87

Calculation of carrier transport in pseudo-quarternary alloys

T. Weil, B. Vinter

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

88

Transport involving superlattice minibands

R.A. Davies, M.J. Kelly, T.M. Kerr

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 43 KB

english, 1986

89

Generalized theory of impact ionization in multilayered semiconductor structures

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 43 KB

english, 1986

90

Proposal of novel triode device using metal-insulator superlattice for extremely high speed response

Yasuyuki Nakata, Masahiro Asada, Yasuharu Suematsu

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 43 KB

english, 1986

91

ZnSe-ZnMnSe and CdTe-CdMnTe superlattices

R.L. Gunshor, L.A. Kolodziejski, N. Otsuka, S. Datta

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 50 KB

english, 1986

92

HgTe-CdTe superlattices as a new infrared material

J.P. Faurie, J. Reno, I. Sou, M. Boukerche

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 50 KB

english, 1986

93

Band structure of a semimetallic HgTe-CdTe superlattice

J.N. Schulman, Yia-Chung Chang

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 50 KB

english, 1986

94

Infrared photoluminescence spectra from HgTe-CdTe superlattices

S.R. Hetzler, J.P. Baukus, A.T. Hunter, J.P. Faurie, P.P. Chow, T.C. McGill

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 50 KB

english, 1986

95

Properties of ZnTe-ZnSe and -ZnS superlattices prepared by hot wall epitaxy

Hiroshi Fujiyasu, Koji Mochizuki, Yasuji Yamazaki, Masaki Aoki, Akira Sasaki, Hiroshi Kuwabara, Yoichiro Nakanishi, Goro Shimaoka

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

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english, 1986

96

Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy

T. Takeda, T. Kurosu, M. Lida, T. Yao

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

97

ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy

Masakazu Kobayashi, Naoki Mino, Makoto Konagai, Kiyoshi Takahashi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

98

Ultrasharp interfaces grown with Van Der Waals epitaxy

Atsushi Koma, Kazuki Yoshimura

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

99

Transport and magneto-optical properties of PbTe doping superlattices

P. Pichler, G. Bauer, H. Clemens, W. Jantsch

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 42 KB

english, 1986

100

Probing the structure of semiconductor superlattices and heterostructures

Y.H. Kao, S.C. Woronick, E. Canova, G.W. Su, L.L. Chang

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 42 KB

english, 1986

101

Evaluation of Al1−xInxAs-GaAs strained layer superlattices by x-ray diffractometry and excitation spectroscopy

M. Sauvage, C. Delalande, P. Voisin, P. Etienne, P. Delescluse

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 40 KB

english, 1986

102

Effects of layer strains in an In0.18Al0.82As-GaAs superlattice

H. Kato, M. Nakayama, S. Chika, N. Iguchi, K. Kubota, N. Sano

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 40 KB

english, 1986

103

Optical study of MBE grown (InAs)m(GaAs)n superlattice alloy on GaAs and of InxGa1−xAs/InyGa1−yAs structures on InP

J.Y. Marzin, L. Goldstein, F. Glas, M. Quillec

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

104

Lattice distortions in GaAs-AlAs and GaAs-InAs superlattices

Hikaru Terauchi, Kousei Kamigaki, Hirofumi Sakashita, Naokatsu Sano, Hiromu Kato, Masaaki Nakayama

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

105

Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor

H. Ohno, R. Katsumi, H. Hasegawa

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 47 KB

english, 1986

106

(InAs)m(GaAs)n superlattice grown by beam-separation MBE method

Y. Matsui, H. Hayashi, K. Kikuchi, K. Yoshida

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 43 KB

english, 1986

107

Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy

M.Y. Yen, A. Madhukar, B.F. Lewis, R. Fernandez, L. Eng, F.J. Grunthaner

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 43 KB

english, 1986

108

Pseudo-alloy behavior of InAs-GaAs strained-layer superlattices

P. Voisin, M. Voos, M.C. Tamargo, R.E. Nahory, A.Y. Cho

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

109

A pseudopotential approach to the thermodynamical properties of III–V semiconductor superlattices

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

110

Strained-layer effective-mass superlattices

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

111

Growth and properties of Si/SiGe superlattices

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

112

Two-dimensional electron systems in Si/SixGe1-x strained-layer superlattices

G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H.J. Herzog

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

113

Anomalous mobility enhancement in Si doping superlattices

Kiyokazu Nakagawa, Yasuhiro Shiraki

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 46 KB

english, 1986

114

RHEED intensity oscillations during silicon MBE growth

T. Sakamoto, N.J. Kawai, T. Nakagawa, K. Ohta, T. Kojima, G. Hashiguchi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 53 KB

english, 1986

115

In situ RHEED observation of selective diminution at Si(001)-2 × 1 superlattice spots during MBE

Naoaki Aizaki, Toru Tatsumi

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 53 KB

english, 1986

116

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 53 KB

english, 1986

117

Solid-phase epitaxy of NiSi2 layer on Si(111) substrate from Si/Ni multi-layer structure prepared by molecular beam deposition

Akitoshi Ishizaka, Yasuhiro Shiraki

Journal:

Surface Science Letters

Year:

1986

File:

PDF, 17 KB

1986

118

Author index

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 561 KB

english, 1986

119

Subject index

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 998 KB

english, 1986