Volume 29; Issue 11-12

Vacuum

Volume 29; Issue 11-12
1

An efficient alternative method of LEED analysis for structural determinations of surfaces

Year:
1979
Language:
english
File:
PDF, 1.05 MB
english, 1979
2

The vacuum use of perfluoro polyether

Year:
1979
Language:
english
File:
PDF, 352 KB
english, 1979
3

Sample contamination caused by sputtering during ion implantation

Year:
1979
Language:
english
File:
PDF, 315 KB
english, 1979
4

Langmuir probe studies of the glow discharge in an rf sputtering system at various frequencies

Year:
1979
Language:
english
File:
PDF, 1.24 MB
english, 1979
5

Activities in vacuum science and technology in the USSR and in eastern europe

Year:
1979
Language:
english
File:
PDF, 170 KB
english, 1979
6

4138. Education in vacuum science and technology in undergraduate and post-experience courses. (GB)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
7

4140. Oxygen uptake on an epitaxial PbSnTe (111) surface. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
8

4141. Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
9

4142. Extrinsic surface states for oxygen chemisorbed on the GaAs (110) surface. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
10

4143. Sheet resistance variation on colour-banded silicon following high dose implantations at high dose rates. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
11

4144. Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
12

4146. Comparative study of annealed neon-, argon- and krypton-ion implantation damage in silicon. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
13

4148. Synchroton radiation photoemission studies of the adsorption of oxygen on magnesium and aluminium. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
14

4150. Electronic states of impurities located at or near semiconductor-insulator interfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
15

4151. Measurement of MIS capacitors with oxygen-doped AlxGa1 − xAs insulating layers on GaAs. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
16

4152. Effects of ultrathin oxides in conducting MIS structures on GaAs. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
17

4153. A theoretical study of Al overlayers on Si (111). (USA)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
18

4155. An appraisal of glow discharge treatment of copper surfaces by the techniques of electron stimulated desorption. (GB)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
19

4156. Electrode surface effects in the high voltage glow discharge. (GB)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
20

4157. Design and operating characteristics of low pressure plasma systems. (GB)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
21

4159. Self-maintaining high-voltage ac vacuum system. (USA)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
22

4161. Trends in the development and use of turbomolecular pumps. (GB)

Year:
1979
Language:
english
File:
PDF, 263 KB
english, 1979
23

4162. The design of very cheap sorption pumps. (GB)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
24

4163. A specimen manipulator for analytical vacuum instrumentation

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
25

4165. Influence of the free surface on the electrical behaviour of metal contacts to p-InAs. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
27

4169. Pseudopotential calculations for ultrathin layer heterostructures. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
28

4171. Ion plating. (France)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
29

4173. Preparation and compositional analysis of sputtered TaN films. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
30

4174. New sputtering system for manufacturing ZnO thin-film SAW devices. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
31

4175. Mean free path of negative ions in diode sputtering. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
32

4176. Scale-up problems in electron-beam evaporation and sputtering. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
33

4178. Vacuum system for an intense pulsed neutron source at the Rutherford Laboratory. (GB)

Year:
1979
Language:
english
File:
PDF, 266 KB
english, 1979
34

4179. Pressure measurements in the SRS. (GB)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
35

4180. The vacuum system for the Daresbury synchrotron radiation source. (GB)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
37

4182. Physico-chemical methods of analysis, their characteristics and comparison. (France)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
38

4183. Hydrocarbon contamination in vacuum dependent scientific instruments. (GB)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
39

4188. Lowering of the degassing rate of stainless steels of the AISI 304 and 316 series. (France)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
40

4189. Comparison of the performances of some surface treatments. (France)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
41

4190. Electron microprobe, principles and application to spectrochemical analyses of surfaces. (France)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
42

4191. Silver contact on GaAs (001) and InP (001)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
43

4192. Schottky barriers on ordered and disordered surfaces of GaAs (110). (USA)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
44

4195. Structural studies of thin nickel films on silicon surfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
45

4196. Application of Auger electron spectroscopy to studies of the silicon/silicide interface. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
46

4197. Measurement of valence band Auger spectra for GaAs (110) from Ga and As CCV transitions. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
47

4199. Surface final-state effects on core electron transition energies. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
49

4202. (110) surface states of GaAs and matrix element effects in angle-resolved photoemission. (USA)

Year:
1979
Language:
english
File:
PDF, 276 KB
english, 1979
50

4203. Self-consistent study of the (2 × 1) reconstructed Si (111) surface. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
51

4205. Surface and near-surface atomic structure of GaAs (110)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
52

4208. Surface bands in relaxed cleavage surface of GaP. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
54

4211. Alloy compositional profiles by AES, ESCA and ion sputtering: air-exposed Fe1−xPdx films. (USA)

Year:
1979
Language:
english
File:
PDF, 97 KB
english, 1979
55

4214. Auger profiling studies of LPE n-AlxGa1−xAs-n-GaAs heterojunctions and the absence of rectification. (USA)

Year:
1979
Language:
english
File:
PDF, 97 KB
english, 1979
58

Committee report 1978/79

Year:
1979
Language:
english
File:
PDF, 77 KB
english, 1979
61

Vacuum gauge calibration by the static method

Year:
1979
Language:
english
File:
PDF, 742 KB
english, 1979
62

Improved version of the CERN condensation cryopump

Year:
1979
Language:
english
File:
PDF, 476 KB
english, 1979
63

A miniaturized 16 I s−1 turbomolecular pump for space application

Year:
1979
Language:
english
File:
PDF, 2.38 MB
english, 1979
64

Behaviour of AlAl2O3-metal capacitors when subjected to voltage and temperature changes

Year:
1979
Language:
english
File:
PDF, 122 KB
english, 1979
65

Workshop notes and short contributions

Year:
1979
Language:
english
File:
PDF, 49 KB
english, 1979
66

4139. Reactions of oxygen with ZnO 1010 surfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 119 KB
english, 1979
67

4145. Epitaxial regrowth of Ar-implanted amorphous silicon. (USA)

Year:
1979
Language:
english
File:
PDF, 256 KB
english, 1979
68

4147. Desorption of neutral molecules from Al (6061) by electron and ion bombardment. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
69

4149. Optical studies of the anodic oxide on GaAs. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
70

4154. Covalent-ionic trend at Schottky barrier interfaces in a pairing model. (USA)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
71

4158. Adhesion and hydrophilicity of glow-discharge polymerized propylene coatings. (USA)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
72

4160. First intercontinental test of uhv transfer device. (USA)

Year:
1979
Language:
english
File:
PDF, 133 KB
english, 1979
73

4164. Four fast working locks, functioning to 10−8 torr. (France)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
74

4166. Dissolution of amorphous silicon into solid aluminium. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
75

4168. Field-assisted minority carrier electron transport across a p-InGaAa/p-InP heterojunction. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
76

4170. GeGaAs (110) interface formation. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
77

4172. Sputtering of PtSi. (USA)

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
78

4177. Two-step process for thin films of tin oxide

Year:
1979
Language:
english
File:
PDF, 134 KB
english, 1979
79

4184. Design and optimization of directly heated LaB6 cathode assemblies for electron-beam instruments. (USA)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
80

4185. The role of chemisorption in plasma etching. (USA)

Year:
1979
Language:
english
File:
PDF, 135 KB
english, 1979
81

4186. Initial etching in an rf butane plasma. (GB)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
82

4187. On the deconversion of semiconducting CdF2 crystals due to vacuum heat treatment. (GB)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
83

4193. Metal-semiconductor surface and interface states on (110) GaAs. (USA)

Year:
1979
Language:
english
File:
PDF, 143 KB
english, 1979
84

4194. New phenomena in Schottky barrier formation on III–V compounds. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
85

4198. Wave functions and (110) surface structure of III–V compounds. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
86

4200. Surface electronic structure studies of GaAs (110). (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
87

4204. On the geometrical structure of cleaved Si (111) surfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
88

4206. UPS and LEED studies of GaAs (110) and (111) As surfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
89

4207. Surface composition of polycrystalline AuCu alloys as a function of temperature. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
90

4209. Rf induction technique for sample heating in surface science experiments. (USA)

Year:
1979
Language:
english
File:
PDF, 140 KB
english, 1979
91

4212. Plasma anodization of GaAs in a dc discharge. (USA)

Year:
1979
Language:
english
File:
PDF, 97 KB
english, 1979
92

4213. Analysis of the oxide/semiconductor interface using Auger and ESCA as applied to InP and GaAs. (USA)

Year:
1979
Language:
english
File:
PDF, 97 KB
english, 1979
93

4215. XPS measurements of abrupt Ge-GaAs heterojunction interfaces. (USA)

Year:
1979
Language:
english
File:
PDF, 97 KB
english, 1979