Volume 151; Issue 5

IEE Proceedings - Optoelectronics

Volume 151; Issue 5

1

Origin of bandgap bowing in GaNP alloys

Buyanova, I.A., Izadifard, M., Chen, W.M., Xin, H.P., Tu, C.W.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

2

Investigations of 1.55-μm GaInNAs/GaAs heterostructures by optical spectroscopy

Sun, H.D., Clark, A.H., Calvez, S., Dawson, M.D., Liu, H.Y., Hopkinson, M., Navaretti, P., Gutierrez, M., Ng, J.S., David, J.P.R., Gilet, P., Grenouillet, L., Million, A.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 255 KB

english, 2004

3

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Intartaglia, R., Taliercio, T., Lefebvre, P., Valvin, P., Bretagnon, T., Guillet, T., Gil, B., Tisch, U., Finkman, E., Salzman, J., Pinault, M.-A., Tournie, E.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

4

1.3-μm GaInNAs surface-normal devices

Calvez, S., Laurand, N., Smith, S.A., Clark, A.H., Hopkins, J.-M., Sun, H.D., Dawson, M.D., Jouhti, T., Kontinnen, J., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 497 KB

english, 2004

5

Optical properties of GaAsNSe/GaAs superlattice investigated by means of piezoelectric photothermal spectroscopy for nonradiative electron transitions

Sakai, K., Fukushima, S., Fukuyama, A., Uesugi, K., Suemune, I., Ikari, T.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 225 KB

english, 2004

6

Structural defects characterisation of GaInNAs MQWs by TEM and PL

Herrera, M., Gonzalez, D., Garcia, R., Hopkinson, M., Navaretti, P., Gutierrez, M., Liu, H.Y.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 368 KB

english, 2004

7

Ultrafast carrier dynamics in nitrogen-implanted GaAs

Sinning, S., Dekorsy, T., Helm, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

8

Effects of rapid thermal annealing on optical quality of GaNP alloys

Izadifard, M., Buyanova, I.A., Bergman, J.P., Chen, W.M., Utsumi, A., Furukawa, Y., Wakahara, A., Yonezu, H.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 229 KB

english, 2004

9

Surface rate-limiting steps and modelling of the nitrogen growth kinetics of GaAs1-xNx/GaAs

Dumont, H., Monteil, Y., Saidi, F., Hassen, F., Maaref, H.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 320 KB

english, 2004

10

Boundary conditions for the electron wavefunction in GaInNAs-based quantum wells and modelling of the temperature-dependent effective bandgap

Hetterich, M., Grau, A., Egorov, A.Yu., Riechert, H.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 254 KB

english, 2004

11

Influence of cluster states on band dispersion in bulk and quantum well (ultra-)dilute nitride semiconductors

Healy, S.B., Lindsay, A., O'Reilly, E.P.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 446 KB

english, 2004

12

Intrinsic limits on electron mobility in disordered dilute nitride semiconductor alloys

Fahy, S., Lindsay, A., O'Reilly, E.P.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 258 KB

english, 2004

13

GaInNAs SESAMs passively mode-locking 1.3-μm solid-state lasers

Liverini, V., Schon, S., Grange, R., Haiml, M., Zeller, S.C., Keller, U.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 541 KB

english, 2004

14

High-frequency performance of triple quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 μm

Martinez, A., Sallet, V., Jahan, D., Provost, J.-G., Landreau, J., Le Gouezigou, O., Dagens, B., Ferlazzo, L., Harmand, J.-C., Ramdane, A.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 247 KB

english, 2004

15

Effects of electron irradiation on photoluminescence from GaInNAs/GaAs multiple quantum wells subject to thermal annealing

Pavelescu, E.-M., Dumitrescu, M., Jouhti, T., Gheorghiu, A., Baltateanu, N., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 243 KB

english, 2004

16

Elucidation of the emission red-shift with increasing growth temperature of MBE-grown GaInNAs/GaAs quantum wells

Pavelescu, E.-M., Dumitrescu, M., Jouhti, T., Wagner, J., Klar, P.J., Karirinne, S., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 256 KB

english, 2004

17

Exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM)

Merz, J.L., Mintairov, A.M., Kosel, T., Sun, K.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 521 KB

english, 2004

18

Blue shift in InGaAsN/GaAs quantum wells with different width

Peng, C.S., Konttinen, J., Liu, H.F., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 287 KB

english, 2004

19

N2-incorporation-induced blue shift in InGaAsN/GaAs quantum well during annealing

Peng, C.S., Liu, H.F., Konttinenn, J., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 333 KB

english, 2004

20

Low threshold, high power and long lifetime InGaAsN/GaAs lasers

Peng, C.S., Laine, N., Konttinen, J., Jouhti, T., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 282 KB

english, 2004

21

Distribution of nitrogen in GaInNAs/GaAs quantum wells

Litvinov, D., Gerthsen, D., Rosenauer, A., Hetterich, M., Grau, A., Gilet, P., Grenouillet, L.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

22

Influence of growth temperature on carrier recombination in GaInNAs-based lasers

Fehse, R., Sweeney, S.J., Adams, A.R., McConville, D., Riechert, H., Geelhaar, L.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 378 KB

english, 2004

23

Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties

Jahan, D., Patriarche, G., Sallet, V., Harmand, J.C.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 457 KB

english, 2004

24

Growth of GaNxAs1-x atomic monolayers and their insertion in the vicinity of GaInAs quantum wells

Le Du, M., Harmand, J.-C., Meunier, K., Patriarche, G., Oudar, J.-L.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 395 KB

english, 2004

25

(Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy

Damilano, B., Barjon, J., Wan, S.W., Duboz, J.-Y., Leroux, M., Laugt, M., Massies, J.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 362 KB

english, 2004

26

Structural properties of free-standing (In,Ga)(As,N) alloys

Zoppi, L., Peressi, M., Tosolini, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 432 KB

english, 2004

27

Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure

Teubert, J., Klar, P.J., Heimbrodt, W., Volz, K., Stolz, W.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

28

Temperature and thickness dependences of electron nonradiative transitions in GaInNAs/GaAs SQW investigated by piezoelectric photothermal spectroscopy

Fukushima, S., Nozoe, K., Saisyo, T., Ikari, T., Kondow, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

29

Band structure calculation of InGaAsN//GaAs, InGaAsN//GaAsP//GaAs and InGaAsN//InGaAsP//InP strained quantum wells

Carrere, H., Marie, X., Barrau, J., Amand, T., Bouzid, S.B., Sallet, V., Harmand, J.-C.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 271 KB

english, 2004

30

Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

Miguel-Sanchez, J., Guzman, A., Ulloa, J.M., Hierro, A., Munoz, E.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 239 KB

english, 2004

31

Optoelectronic properties of 2-D and 3-D-grown GaInNAs//GaAs QW light emitting diodes and laser diodes

Ulloa, J.-M., Hierro, A., Miguel-Sanchez, J., Guzman, A., Trampert, A., Sanchez-Rojas, J.L., Calleja, E.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 314 KB

english, 2004

32

Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities

Felici, M., Cesari, V., Polimeni, A., Frova, A., Capizzi, M., Choi, Y.D., O, B., Yu, Y.-M., Nabetani, Y., Ito, Y., Okuno, T., Kato, T., Matsumoto, T., Hirai, T., Sou, I.K., Ge, W.K.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 251 KB

english, 2004

33

Percolation-based multimode Ga-N behaviour in the Raman spectra of GaInAsN

Tite, T., Chafi, A., Laurenti, J.P., Pages, O., Bormann, D., Tournie, E.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

34

Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells

Bouragba, T., Mihailovic, M., Carrere, H., Disseix, P., Vasson, A., Leymarie, J., Bedel, E., Arnoult, A., Fontaine, C.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 296 KB

english, 2004

35

Composition fluctuations in GaInNAs multi-quantum wells

Herrera, M., Gonzalez, D., Garcia, R., Hopkinson, M., Navaretti, P., Gutierrez, M., Liu, H.Y.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 319 KB

english, 2004

36

Photoreflectance and photoluminescence study of step-like GaInNAs/GaInNAs/GaAs quantum wells

Kudrawiec, R., Motyka, M., Andrzejewski, J., Misiewicz, J., Gollub, D., Forchel, A.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 243 KB

english, 2004

37

Synthesis and properties of highly mismatched II-O-VI alloys

Yu, K.M., Walukiewicz, W., Scarpulla, M.A., Dubon, O.D., Shan, W., Wu, J., Beeman, J.W., Becla, P.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 710 KB

english, 2004

38

Mutual passivation effects in highly mismatched group III-V-N alloys

Wu, J., Yu, K.M., Walukiewicz, W.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 453 KB

english, 2004

39

Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

Navaretti, P., Liu, H.Y., Hopkinson, M., Gutierrez, M., David, J.P.R., Hill, G., Herrera, M., Gonzalez, D., Garcia, R.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 319 KB

english, 2004

40

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C.J., Potter, R.J., Boland-Thoms, A., Vickers, A.J., Chalker, P.R., Joyce, T.B., Bullough, T.J.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 269 KB

english, 2004

41

Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems

Sarzala, R.P., Nakwaski, W.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 336 KB

english, 2004

42

GaInNAs(Sb) long wavelength communications lasers

Harris, J.S., Jr., Bank, S.R., Wistey, M.A., Yuen, H.B.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 704 KB

english, 2004

43

Comparative optical study of GaAs1-xNx/GaAs and BxGa1-xAs/GaAs epilayers

Saidi, F., Hassen, F., Maaref, H., Dumont, H., Monteil, Y.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 406 KB

english, 2004

44

Defects in dilute nitrides: significance and experimental signatures

Chen, W.M., Buyanova, I.A., Tu, C.W.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 289 KB

english, 2004

45

Epitaxy and characterisation of dilute III-As1-yNy on GaAs and InP

Kohler, K., Wagner, J., Ganser, P., Serries, D., Geppert, T., Maier, M., Kirste, L.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 516 KB

english, 2004

46

Thermal annealing effect on 1.3-μm GaInNAs/GaAs quantum well structures capped with dielectric films

Liu, H.F., Peng, C.S., Likonen, J., Konttinen, J., Dhaka, V.D.S., Tkachenko, N., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 275 KB

english, 2004

47

Physics of defects and hydrogen in dilute nitrides

Zhang, S.B., Janotti, A., Wei, S.-H., Van de Walle, C.G.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 656 KB

english, 2004

48

Dilute nitride and related mismatched semiconductor alloys

O'Reilly, E.P., Balkan, N., Buyanova, I.A., Marie, X., Riechert, H.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

49

Post-growth annealing of GaInNAs layers and GaInNAs/GaAs multiple quantum wells studied by photoreflectance spectroscopy

Kudrawiec, R., Misiewicz, J., Pavelescu, E.-M., Konttinen, J., Pessa, M.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004