Volume 18; Issue 10

IEEE Electron Device Letters

Volume 18; Issue 10

1

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

Gaska, R., Chen, Q., Yang, J., Osinsky, A., Asif Khan, M., Shur, M.S.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 75 KB

english, 1997

2

Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching

Okandan, M., Fonash, S.J., Ozaita, M., Preuninger, F., Chan, Y.D., Werking, J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 93 KB

english, 1997

3

Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

Nae-In Lee,, Jin-Woo Lee,, Sung-Hoi Hur,, Hyoung-Sub Kim,, Chul-Hi Han,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 69 KB

english, 1997

4

Investigation of anomalous leakage current in mesa-isolated SOI MOSFETs

Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Maegawa, S., Inoue, Y., Nishimura, T.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 91 KB

english, 1997

5

Prediction of plasma charging induced gate oxide damage by plasma charging probe

Shawming Ma,, McVittie, J.P., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 78 KB

english, 1997

6

Degradation characteristics of STI and MESA-isolated thin-film SOI CMOS

Cheng-Liang Huang,, Grula, G.J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

7

Test structure to investigate the series resistance components of source/drain structure

Biesemans, S., Kubicek, S., De Meyer, K.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 117 KB

english, 1997

8

Charge trapping and degradation in high-permittivity TiO2 dielectric films

Hyeon-Seag Kim,, Campbell, S.A., Gilmer, C.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 76 KB

english, 1997

9

Correlation between fixed positive charge and hot-electron immunity for nitridized oxides

Hook, T.B., Watson, K., Lee, E., Martin, D., Ganesh, R., Kim, S., Ray, A.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 33 KB

english, 1997

10

New self-aligned planar resonant-tunneling diodes for monolithic circuits

Chen, C.L., Mathews, R.H., Mahoney, L.J., Maki, P.A., Molvar, K.M., Sage, J.P., Fitch, G.L., Sollner, T.C.L.G.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 52 KB

english, 1997

11

An experimental confirmation of automatic threshold voltage convergence in a flash memory using alternating word-line voltage pulses

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

12

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs

Simoen, E., Vasina, P., Sikula, J., Claeys, C.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 78 KB

english, 1997