Volume 18; Issue 2

IEEE Electron Device Letters

Volume 18; Issue 2

1

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

Auth, C.P., Plummer, J.D.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 89 KB

english, 1997

2

Improved efficiency silicon solar cell module

Zhao, J., Wang, A., Abbaspour-Sani, E., Yun, F., Green, M.A.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 196 KB

english, 1997

3

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

K. Moore, C. Weitzel, K. Nordquist, L. Pond, J. Palmour, S. Allen, C. Carter

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 57 KB

english, 1997

4

A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric

B. Zhao, M. Biberger, V. Hoffman, S. Wang, P. Vasudev, T. Seidel

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 129 KB

english, 1997

5

Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction

Jin-hi Shin, Joonwoo Lee, Yujin Chung, Byoung-uk Ihn, Bumman Kim

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 103 KB

english, 1997

6

Arsenic deactivation enhanced diffusion and the reverse short-channel effect

P. Rousseau, S. Crowder, P. Griffin, J. Plummer

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 83 KB

english, 1997

7

High-resolution cross-sectional imaging of MOSFETs by scanning resistance microscopy

J. Nxumalo, D. Shimizu, D. Thomson, M. Simard-normadin

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

8

0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Hara, N., Suehiro, H., Shima, M., Kuroda, S.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 83 KB

english, 1997

9

AC hot-carrier-induced degradation in NMOSFETs with N/sub 2/O-based gate dielectrics

Xu Zeng,, Lai, P.T., Ng, W.T.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 84 KB

english, 1997

10

A guideline for designing chalcogenide-based glasses for threshold switching characteristics

Prakash, S., Asokan, S., Ghare, D.B.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 48 KB

english, 1997

11

AC output conductance of SOI MOSFETs and impact on analog applications

Sinitsky, D., Tu, R., Chunlin Liang,, Mansun Chan,, Bokor, J., Chenming Hu,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 75 KB

english, 1997

12

Resist-related damage on ultrathin gate oxide during plasma ashing

Chao-Hsin Chien,, Chun-Yen Chang,, Horng-Chih Lin,, Tsai-Fu Chang,, Shean-Guang Chiou,, Liang-Po Chen,, Tiao-Yuan Huang,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 62 KB

english, 1997

13

Rapid degradation of MESFETs under impact ionization and low-temperature conditions

Marti-Canales, J.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 93 KB

english, 1997

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