Volume 20; Issue 1

IEEE Electron Device Letters

Volume 20; Issue 1

1

Transconductance in nitride-gate or oxynitride-gate transistors

Khare, M., Wang, X.W., Ma, T.P.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 67 KB

english, 1999

2

Effect of IGBT switching dynamics on loss calculations in high speed applications

Bhalla, A., Gladish, J., Dolny, G.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 89 KB

english, 1999

3

Process stability of deuterium-annealed MOSFET's

Clark, W.F., Ference, T.G., Hook, T.B., Watson, K.M., Mittl, S.W., Burnham, J.S.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 69 KB

english, 1999

4

An HBT noise model valid up to transit frequency

Rudolph, M., Doerner, R., Klapproth, L., Heymann, P.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 82 KB

english, 1999

5

Stability of short-channel P-channel polysilicon thin-film transistors with ECR N2O-plasma gate oxide

Jin-Woo Lee,, Nae-In Lee,, Chul-Hi Han,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 81 KB

english, 1999

6

Arsenic and phosphorus double ion implanted source/drain junction for 0.25and sub-0.25-μm MOSFET technology

Hi-Deok Lee,, Young-Jong Lee,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 49 KB

english, 1999

7

Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

Ying-Che Tseng,, Huang, W.M., Spears, E., Spooner, D., Ngo, D., Ford, J.M., Woo, J.C.S.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 76 KB

english, 1999

8

An improved test structure for recombination lifetime profile measurements in very thick silicon wafers

Daliento, S., Sanseverino, A., Spirito, P.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 51 KB

english, 1999

9

Observation of reduced boron penetration and gate depletion for poly-Si/sub 0.8/Ge/sub 0.2/ gated PMOS devices

Wen-Chin Lee,, Tsu-Jae King,, Chenming Hu,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

10

Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching

Ching-Fa Yeh,, Chien-Hung Liu,, Jwinn-Lein Su,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

11

Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

Shey-Shi Lu,, Yao-Wen Hsu,, Chin-Chun Meng,, Liang-Po Chen,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 121 KB

english, 1999

12

High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N2O-plasma oxide

Nae-In Lee,, Jin-Woo Lee,, Hyoung-Sub Kim,, Chul-Hi Han,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 77 KB

english, 1999

13

Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Kuo-Ching Huang,, Yean-Kuen Fang,, Dun-Nian Yaung,, Chii-Wen Chen,, Mong-Song Liang,, Jang-Cheng Hsieh,, Chi-Wen Su,, Kuei-Ying Lee,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 74 KB

english, 1999

14

A GaAs MOSFET with a liquid phase oxidized gate

Jau-Yi Wu,, Hwei-Heng Wang,, Yeong-Her Wang,, Mau-Phon Houng,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 66 KB

english, 1999

15

Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing

Yong Woo Cboi,, Jeong No Lee,, Tae Woong Jang,, Byung Tae Ahn,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 63 KB

english, 1999

16

Influence of lateral electric field on the anomalous leakage current in polysilicon TFT'S

Kumar, A., Sin, J.K.O.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 46 KB

english, 1999

17

Monitoring interface traps by DCIV method

Jin Cai,, Chih-Tang Sah,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 117 KB

english, 1999

18

A new numerical method for extraction of overlap capacitance in a-Si TFTs

Pham, H.H., Nathan, A.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 69 KB

english, 1999

19

A novel coplanar amorphous silicon thin-film transistor using silicide layers

Sung Ki Kim,, Young Jin Choi,, Won Kyu Kwak,, Kyu Sik Cho,, Jin Jang,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 59 KB

english, 1999

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