Volume 20; Issue 4

IEEE Electron Device Letters

Volume 20; Issue 4

1

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 85 KB

english, 1999

2

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Henson, W.K., Ahmed, K.Z., Vogel, E.M., Hauser, J.R., Wortman, J.J., Venables, R.D., Xu, M., Venables, D.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 192 KB

english, 1999

3

A metal-oxide-semiconductor varactor

Svelto, F., Erratico, P., Manzini, S., Castello, R.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 88 KB

english, 1999

4

Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

Zhonghe Jin, H. Kwok, Man Wong

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 72 KB

english, 1999

5

A silicon monolithic spiral transmission line balun with symmetrical design

Y. Yoon, Yicheng Lu, R. Frye, P. Smith

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 86 KB

english, 1999

6

Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire

Mathew, S.J., Guofu Niu,, Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 67 KB

english, 1999

7

On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMTs

Menozzi, R., Borgarino, M., van der Zanden, K., Schreurs, D.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 67 KB

english, 1999

8

Highly efficient enhancement-mode power heterojunction FET with multilayer cap and doped recess structure for 3.5-V digital cellular phones

Bite, Y., Iwata, N.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 93 KB

english, 1999

9

A novel technology to form air gap for ULSI application

Kow-Ming Chang,, Ji-Yi Yang,, Lih-Woen Chen,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

10

Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

Bolognesi, C.R., Matine, N., Dvorak, R.W., Xu, X.G., Hu, J., Watkins, S.P.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

11

Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates

Jong-Wook Lee,, Hyung-Ki Kim,, Ji-Woon Yang,, Won-Chang Lee,, Jeong-Hee Oh,, Min-Rok Oh,, Yo-Hwan Koh,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 46 KB

english, 1999

12

Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Lai, P.T., Jing-Ping Xu,, Cheng, Y.C.

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

13

A new bottom-gated poly-Si thin-film transistor

Kwon-Young Choi,, Kee-Chan Park,, Cheol-Min Park,, Min-Koo Han,

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 130 KB

english, 1999