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Volume 20; Issue 4
Main
IEEE Electron Device Letters
Volume 20; Issue 4
IEEE Electron Device Letters
Volume 20; Issue 4
1
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Sheppard, S.T.
,
Doverspike, K.
,
Pribble, W.L.
,
Allen, S.T.
,
Palmour, J.W.
,
Kehias, L.T.
,
Jenkins, T.J.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 85 KB
Your tags:
english, 1999
2
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Henson, W.K.
,
Ahmed, K.Z.
,
Vogel, E.M.
,
Hauser, J.R.
,
Wortman, J.J.
,
Venables, R.D.
,
Xu, M.
,
Venables, D.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 192 KB
Your tags:
english, 1999
3
A metal-oxide-semiconductor varactor
Svelto, F.
,
Erratico, P.
,
Manzini, S.
,
Castello, R.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 88 KB
Your tags:
english, 1999
4
Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers
Zhonghe Jin
,
H. Kwok
,
Man Wong
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 72 KB
Your tags:
english, 1999
5
A silicon monolithic spiral transmission line balun with symmetrical design
Y. Yoon
,
Yicheng Lu
,
R. Frye
,
P. Smith
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 86 KB
Your tags:
english, 1999
6
Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire
Mathew, S.J.
,
Guofu Niu,
,
Dubbelday, W.B.
,
Cressler, J.D.
,
Ott, J.A.
,
Chu, J.O.
,
Mooney, P.M.
,
Kavanagh, K.L.
,
Meyerson, B.S.
,
Lagnado, I.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 67 KB
Your tags:
english, 1999
7
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMTs
Menozzi, R.
,
Borgarino, M.
,
van der Zanden, K.
,
Schreurs, D.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 67 KB
Your tags:
english, 1999
8
Highly efficient enhancement-mode power heterojunction FET with multilayer cap and doped recess structure for 3.5-V digital cellular phones
Bite, Y.
,
Iwata, N.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 93 KB
Your tags:
english, 1999
9
A novel technology to form air gap for ULSI application
Kow-Ming Chang,
,
Ji-Yi Yang,
,
Lih-Woen Chen,
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 154 KB
Your tags:
english, 1999
10
Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
Bolognesi, C.R.
,
Matine, N.
,
Dvorak, R.W.
,
Xu, X.G.
,
Hu, J.
,
Watkins, S.P.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 116 KB
Your tags:
english, 1999
11
Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates
Jong-Wook Lee,
,
Hyung-Ki Kim,
,
Ji-Woon Yang,
,
Won-Chang Lee,
,
Jeong-Hee Oh,
,
Min-Rok Oh,
,
Yo-Hwan Koh,
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 46 KB
Your tags:
english, 1999
12
Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment
Lai, P.T.
,
Jing-Ping Xu,
,
Cheng, Y.C.
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1999
13
A new bottom-gated poly-Si thin-film transistor
Kwon-Young Choi,
,
Kee-Chan Park,
,
Cheol-Min Park,
,
Min-Koo Han,
Journal:
IEEE Electron Device Letters
Year:
1999
Language:
english
File:
PDF, 130 KB
Your tags:
english, 1999
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