Volume 21; Issue 6

IEEE Electron Device Letters

Volume 21; Issue 6

1

RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

Suk-Hun Lee, Jae-Kyu Chun, Jae-Jin Hur, Jae-Seung Lee, Gi-Hong Rue, Young-Ho Bae, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 83 KB

english, 2000

2

Comparison of photoresponsive drain conduction and gate leakage in n-channel pseudomorphic HEMT and MESFET under electro-optical stimulations

Kim, D.M., Kim, H.J., Lee, J.I., Lee, Y.J.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 183 KB

english, 2000

3

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 69 KB

english, 2000

4

Pre-breakdown in thin SiO2 films

F. Crupi, B. Neri, S. Lombardo

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 76 KB

english, 2000

5

A comparative study of the on-off switching behavior of metal-insulator-metal antifuses

W. Li, D. Mckenzie, W. Wiszniewski

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 119 KB

english, 2000

6

Improved performance and reliability of N2O-grown oxynitride on 6H-SiC

J. Xu, P. Lai, C. Chan, B. Li, Y. Cheng

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

7

Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Y. Wu, A. Chin, W. Chen

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 82 KB

english, 2000

8

A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

Jung-hoon Oh, Hoon-ju Chung, Nae-in Lee, Chul-hi Han

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 72 KB

english, 2000

9

Si/sub 1-x-y/GexCy-channel p-MOSFET's with improved thermal stability

A. Mocuta, D. Greve

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 99 KB

english, 2000

10

Nanometer-scale copper electrodeposition from an on-chip source

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 167 KB

english, 2000

11

Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM's

Satoh, S., Tosaka, Y., Wender, S.A.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 43 KB

english, 2000

12

Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices

Sivoththaman, S., Laureys, W., De Schepper, P., Nijs, J., Mertens, R.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 66 KB

english, 2000

13

Precision electrical trimming of very low TCR poly-SiGe resistors

Babcock, J.A., Francis, P., Bashir, R., Kabir, A.E., Schroder, D.K., Lee, M.S.L., Dhayagude, T., Yindeepol, W., Prasad, S.J., Kalnitsky, A., Thomas, M.E., Haggag, H., Egan, K., Bergemont, A., Jansen,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 56 KB

english, 2000

14

A novel photodetector using MOS tunneling structures

Liu, C.W., Liu, W.T., Lee, M.H., Kuo, W.S., Hsu, B.C.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 57 KB

english, 2000

15

High performance sub-0.25 /spl mu/m devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition

Ma, Y., Lee, J.L., Carroll, M.S., Lee, K.H.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 59 KB

english, 2000

16

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

Khemka, V., Ananthan, V., Chow, T.P.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

17

Novel capacitor process using diffusion barrier rounded by Si/sub 3/N/sub 4/ spacer for high density FRAM device

Bon Jae Koo,, Yoon Jong Song,, Sung Yung Lee,, Dong Jin Jung,, Hyun Ho Kim,, Suk Ho Joo,, Yong Tak Lee,, Kinam Kim,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 97 KB

english, 2000

18

Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopper

Kyung Wook Kim,, Kyu Sik Cho,, Jai Il Ryu,, Keon Ho Yoo,, Jin Jang,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 117 KB

english, 2000

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