Volume 24; Issue 6

IEEE Electron Device Letters

Volume 24; Issue 6

1

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

Zhao, J.H., Alexandrov, P., Li, X.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 265 KB

english, 2003

2

Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, Q. Kan, R. Tsai, M. Wojtowicz, D. Eng, L. Tran, T. Block, P. Liu, M. Nishimoto, A. Oki

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 289 KB

english, 2003

3

PVD HfO2 for high-precision MIM capacitor applications

Sun Jung Kim,, Byung Jin Cho,, Ming Fu Li,, Xiongfei Yu,, Chunxiang Zhu,, Chin, A., Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 248 KB

english, 2003

4

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

Chao-Chi Hong,, Jenn-Gwo Hwu,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 239 KB

english, 2003

5

Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance

Connelly, D., Faulkner, C., Grupp, D.E.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 406 KB

english, 2003

6

High current gain 4H-SiC npn bipolar junction transistors

Chih-Fang Huang,, Cooper, J.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 393 KB

english, 2003

7

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

Chun-Tsen Lu,, Kun-Wei Lin,, Huey-Ing Chen,, Hung-Ming Chuang,, Chun-Yuan Chen,, Wen-Chau Liu,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 231 KB

english, 2003

8

Large-signal linearity in III-N MOSDHFETs

Tarakji, A., Fatima, H., Hu, X., Zhang, J.-P., Simin, G., Khan, M.A., Shur, M.S., Gaska, R.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 256 KB

english, 2003

9

A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

Ming-Jyh Hwu,, Hsien-Chin Chiu,, Shih-Cheng Yang,, Yi-Jen Chan,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 308 KB

english, 2003

10

Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz

Daekyu Yu,, Kyungho Lee,, Bumman Kim,, Ontiveros, D., Vargason, K., Kuo, J.M., Kao, Y.C.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 342 KB

english, 2003

11

Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

Kilchytska, V., Levacq, D., Lederer, D., Raskin, J.-P., Flandre, D.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 268 KB

english, 2003

12

A study on the transient effect due to hydrogen passivation in InGaP HBTs

Shao-You Deng,, Chang-Han Wu,, Lee, J.Y.-M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 255 KB

english, 2003

13

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

Jie Sun,, Fatima, H., Koudymov, A., Chitnis, A., Hu, X., Wang, H.-M., Zhang, J., Simin, G., Yang, J., Khan, M.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 339 KB

english, 2003

14

Source-gated thin-film transistors

Shannon, J.M., Gerstner, E.G.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 228 KB

english, 2003

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